Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
    124.
    发明授权
    Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权
    多官能直链硅氧烷化合物,由该化合物制备的硅氧烷聚合物,以及通过使用聚合物形成电介质膜的方法

    公开(公告)号:US08053173B2

    公开(公告)日:2011-11-08

    申请号:US12458532

    申请日:2009-07-15

    CPC classification number: C08G77/50 C07F7/0838 C07F7/1804

    Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.

    Abstract translation: 新型多功能直链硅氧烷化合物,由硅氧烷化合物制备的硅氧烷聚合物,以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能(例如模量),优异的热稳定性,低碳含量和低吸湿性,并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能,热稳定性和抗裂性,而且具有低吸湿性和与成孔材料的优异相容性,导致低的介电常数。 此外,硅氧烷聚合物保留相对低的碳含量,但SiO 2含量高,从而改善了对半导体器件的适用性。 因此,硅氧烷聚合物有利地用作半导体器件的介电膜的材料。

    Image display device with plural light emitting diodes
    125.
    发明授权
    Image display device with plural light emitting diodes 有权
    具有多个发光二极管的图像显示装置

    公开(公告)号:US08026878B2

    公开(公告)日:2011-09-27

    申请号:US11939128

    申请日:2007-11-13

    CPC classification number: G09F9/33 G09G3/14

    Abstract: Disclosed herein is an image display device having a plurality of light emitting diodes (LEDs), which can maintain a primary color which is desired to be expressed, and prevent an interference of other unwanted colors and a change of the primary color at the time of application of a light source of each light emitting diode. The image display device comprises: a first optical filter layer containing a violet wavelength-absorbing material having a wavelength range of from 380 nm to 450 nm such as Bi2O3 so as to prevent light having a wavelength ranging from 380 nm to 450 nm from being leaked out to an undesired region of an image display portion of the image display device; and a second optical filter layer such as a blue color filter layer so as to allow a white light to be expressed in a desired region of the image display portion.

    Abstract translation: 本文公开了一种具有多个发光二极管(LED)的图像显示装置,其可以保持期望表达的原色,并且防止其它不需要的颜色的干扰和原色的变化 应用每个发光二极管的光源。 图像显示装置包括:含有波长范围为380nm〜450nm的紫外线波长吸收材料的第一光学滤光层,例如Bi 2 O 3,以防止波长范围为380nm至450nm的光被泄漏 出射到图像显示装置的图像显示部分的不期望区域; 以及第二滤光器层,例如蓝色滤色器层,以便允许在图像显示部分的期望区域中表达白光。

    Carbon nano-tube film with a transformed substrate structure and a manufacturing method thereof
    129.
    发明授权
    Carbon nano-tube film with a transformed substrate structure and a manufacturing method thereof 有权
    具有转化的衬底结构的碳纳米管膜及其制造方法

    公开(公告)号:US07811667B2

    公开(公告)日:2010-10-12

    申请号:US12055755

    申请日:2008-03-26

    Abstract: A carbon nanotube (CNT) film having a transformed substrate structure and a manufacturing method thereof. The CNT film includes a transparent substrate, a plurality of three-dimensional (3D) structures formed distant from each other on the transparent substrate, and carbon nanotubes (CNTs) deposited on the transparent substrate where the plurality of 3D structures is not formed. The method includes forming a plurality of 3D structures distant from each other on a transparent substrate, and depositing a CNT solution on the substrate with the plurality of 3D structures formed thereon, wherein the CNT solution is deposited into a portion of the transparent substrate where the 3D structures are not formed. Thus, the deposition mechanism of the CNT solution is controlled to thereby increase the transparency of the CNT film and the electrical conductivity of an electrode including the CNT film.

    Abstract translation: 具有转化基板结构的碳纳米管(CNT)膜及其制造方法。 CNT膜包括透明基板,在透明基板上彼此远离形成的多个三维(3D)结构以及沉积在不形成多个3D结构的透明基板上的碳纳米管(CNT)。 该方法包括在透明基板上形成彼此远离的多个3D结构,并且在其上形成有多个3D结构的基板上沉积CNT溶液,其中将CNT溶液沉积到透明基板的一部分中, 没有形成3D结构。 因此,控制CNT溶液的沉积机理,从而提高CNT膜的透明度和包括CNT膜的电极的导电性。

    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
    130.
    发明申请
    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权
    多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法

    公开(公告)号:US20090269942A1

    公开(公告)日:2009-10-29

    申请号:US12458009

    申请日:2009-06-29

    CPC classification number: C07F7/21 Y10T428/31663

    Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    Abstract translation: 多官能环状硅氧烷化合物(A),由化合物(A)或化合物(A)制备的硅氧烷类(共)聚合物和至少一种具有有机桥(B)的Si单体,无环烷氧基 硅烷单体(C)和直链硅氧烷单体(D); 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性,因此由该化合物制备的聚合物的机械性能,热稳定性和抗裂性优异,并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外,低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性,其中它被广泛用作电介质膜。

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