公开(公告)号：US07250645B1

公开(公告)日：2007-07-31

申请号：US10761374

申请日：2004-01-22

Applicant: Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

Inventor： Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

IPC: H01L29/76 ,  H01L27/08

CPC classification number: H01L29/785 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/7842

Abstract: A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate formed adjacent the dielectric layer.

Abstract translation: 翅片场效应晶体管（FinFET）包括反转的T形翅片。 FinFET还包括邻近反转的T形翅片形成的源极和漏极区域。 FinFET还包括邻近散热片表面形成的电介质层和邻近电介质层形成的栅极。

公开(公告)号：US07099798B2

公开(公告)日：2006-08-29

申请号：US10973186

申请日：2004-10-25

Applicant: Bin Yu ,  Yong Rui

Inventor： Bin Yu ,  Yong Rui

IPC: G06F11/30 ,  G21C17/00

CPC classification number: G06Q10/10

Abstract: An event-based system and process for recording and playback of collaborative electronic presentations is presented. The present system and process includes a technique for recording collaborative electronic presentations by capturing and storing the interactions between each participant and presentation data where each interaction event is timestamped and linked to a data file comprising the presentation data. The present system and process also includes a technique for playing back the recorded collaborative electronic presentation, which involves displaying the presentation data in an order it was originally presented and reproducing the recorded interactions between each participant and the displayed presentation data at the same point in the presentation that they were originally performed, based on the aforementioned timestamps.

Abstract translation: 介绍了一个基于事件的系统和进程，用于录制和回放协同电子演示文稿。 本系统和过程包括通过捕获和存储每个参与者与呈现数据之间的交互来记录协同电子呈现的技术，其中每个交互事件被加时间戳并链接到包括呈现数据的数据文件。 本系统和过程还包括一种用于回放记录的协同电子表现的技术，其涉及以原始呈现的顺序显示呈现数据，并且在相同的点处再现每个参与者和所显示的呈现数据之间的记录的交互 基于上述时间戳，他们最初执行的演示。

公开(公告)号：US06995438B1

公开(公告)日：2006-02-07

申请号：US10674478

申请日：2003-10-01

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/785 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66795

Abstract: A semiconductor device includes a substrate and an insulating layer formed on the substrate. A conductive fin may be formed on the insulating layer. Fully silicided source and drain regions may be formed adjacent to the fin. A metal gate may be formed over a portion of the fin via a damascene process.

Abstract translation: 半导体器件包括衬底和形成在衬底上的绝缘层。 可以在绝缘层上形成导电翅片。 完全硅化的源极和漏极区域可以形成在鳍片附近。 可以通过镶嵌工艺在鳍的一部分上形成金属栅极。

公开(公告)号：US06984569B2

公开(公告)日：2006-01-10

申请号：US10642916

申请日：2003-08-18

Applicant: Olov B. Karlsson ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic ,  Qi Xiang

Inventor： Olov B. Karlsson ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic ,  Qi Xiang

IPC: H01L21/8224

CPC classification number: H01L29/7842 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78654

Abstract: A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.

公开(公告)号：US06982464B2

公开(公告)日：2006-01-03

申请号：US10975473

申请日：2004-10-29

Applicant: Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/785 ,  H01L21/3212 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/6681

Abstract: A FinFET-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

Abstract translation: FinFET型半导体器件包括翅片结构，其上形成相对薄的非晶硅层，然后形成未掺杂的多晶硅层。 半导体器件可以使用化学机械抛光（CMP）进行平面化，其中非晶硅层用作阻挡层以防止损坏鳍结构。

公开(公告)号：US06974983B1

公开(公告)日：2005-12-13

申请号：US10768660

申请日：2004-02-02

Applicant: Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/062

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by a channel stop layer.

Abstract translation: 半导体器件包括N沟道器件和P沟道器件。 N沟道器件包括第一源极区，第一漏极区，第一鳍结构和栅极。 P沟道器件包括第二源极区，第二漏极区，第二鳍结构和栅极。 第二源极区域，第二漏极区域和第二鳍状结构通过沟道阻挡层与第一源极区域，第一漏极区域和第一鳍片结构分离。

公开(公告)号：US06936882B1

公开(公告)日：2005-08-30

申请号：US10614001

申请日：2003-07-08

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/76 ,  H01L29/786 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/785 ,  H01L21/28097 ,  H01L21/823443 ,  H01L21/823835 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66795

Abstract: A semiconductor device includes a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer. The first device may include a first fin formed on the insulating layer, a first dielectric layer formed on the first fin, and a partially silicided gate formed over a portion of the first fin and the first dielectric layer. A second device also may be formed on the insulating layer. The second device may include a second fin formed on the insulating layer, a second dielectric layer formed on the second fin, and a fully silicided gate formed over a portion of the second fin and the second dielectric layer.

Abstract translation: 半导体器件包括衬底和形成在衬底上的绝缘层。 可以在绝缘层上形成第一器件。 第一器件可以包括形成在绝缘层上的第一鳍片，形成在第一鳍片上的第一电介质层和形成在第一鳍片和第一介电层的一部分上的部分硅化栅极。 也可以在绝缘层上形成第二器件。 第二器件可以包括形成在绝缘层上的第二鳍片，形成在第二鳍片上的第二介电层，以及形成在第二鳍片和第二介电层的一部分上的完全硅化栅极。

公开(公告)号：US20050158699A1

公开(公告)日：2005-07-21

申请号：US10871705

申请日：2004-06-21

Applicant: Prakash Kadkade ,  Christopher Bare ,  Barbara Schnabel-Preikstas ,  Bin Yu

Inventor： Prakash Kadkade ,  Christopher Bare ,  Barbara Schnabel-Preikstas ,  Bin Yu

IPC: A01N1/02 ,  C12N5/04

CPC classification number: A01N1/0284 ,  A01N1/0221

Abstract: The present invention relates to methods for cryopreserving plant cells and to methods for recovering viable plant cells from long or short term cryopreservation. Plant cells to be cryopreserved can be grown in culture and pretreated with a solution containing an cryoprotective agent and, optionally, a stabilizer. Stabilizers are preferably membrane stabilizers such as ethylene inhibitors, oxygen radical scavengers and divalent cations. Cells can also be stabilized by subjecting the culture to a heat shock. Pretreated cells are acclimated to a reduced temperature and loaded with a cryoprotective agent such as DMSO, propylene glycol or polyethylene glycol. Loaded cells are incubated with a vitrification solution which, for example, comprises a solution with a high concentration of the cryoprotective agent. Vitrified cells retain less than about 20% water content and can be frozen at cryopreservation temperatures for long periods of time without significantly altering the genotypic or phenotypic character of the cells. Plant cells may also be cryopreserved by lyophilizing cells prior to exposure to a vitrification solution. The combination of lyophilization and vitrification removes about 80% to about 95% of the plant cell's water. Cells can be successfully cryopreserved for long periods of time and viably recovered. The invention also relates to methods for the recovery of viable plant cells from cryopreservation. Cells are thawed to about room temperature and incubated in medium containing a cryoprotective agent and a stabilizer. The cryoprotective agent is removed and the cells successfully incubated and recovered in liquid or semi-solid growth medium. The invention also relates to the cryopreserved cells and to viable plant cells which have been recovered from long or short term cryopreservation.

Abstract translation: 本发明涉及用于冷冻保存植物细胞的方法和从长期或短期冷冻保存中回收活的植物细胞的方法。 待冷冻保存的植物细胞可以在培养物中生长并用含有冷冻保护剂和任选的稳定剂的溶液预处理。 稳定剂优选为膜稳定剂，例如乙烯抑制剂，氧自由基清除剂和二价阳离子。 也可以通过使培养物受热休克来稳定细胞。 预处理的细胞适应于降低的温度，并加载冷冻保护剂如DMSO，丙二醇或聚乙二醇。 将加载的细胞与玻璃化溶液一起孵育，所述玻璃化溶液例如包含具有高浓度冷冻保护剂的溶液。 玻璃化细胞保留少于约20％的水含量，并且可以在冷冻保存温度下长时间冷冻，而不显着改变细胞的基因型或表型特征。 植物细胞也可以在暴露于玻璃化溶液之前由冻干细胞冷冻保存。 冻干和玻璃化的组合消除了植物细胞水的约80％至约95％。 细胞可以成功地冷冻保存长时间，有效地恢复。 本发明还涉及从冷冻保存中回收活的植物细胞的方法。 将细胞解冻至约室温，并在含有冷冻保护剂和稳定剂的培养基中孵育。 除去冷冻保护剂，并将细胞在液体或半固体生长培养基中成功培养和回收。 本发明还涉及冷冻保存的细胞和已经从长期或短期冷冻保存中回收的活的植物细胞。

公开(公告)号：US06914277B1

公开(公告)日：2005-07-05

申请号：US10674400

申请日：2003-10-01

Applicant: Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by an insulating layer.

Abstract translation: 半导体器件包括N沟道器件和P沟道器件。 N沟道器件包括第一源极区，第一漏极区，第一鳍结构和栅极。 P沟道器件包括第二源极区，第二漏极区，第二鳍结构和栅极。 第二源极区域，第二漏极区域和第二鳍状结构通过绝缘层与第一源极区域，第一漏极区域和第一鳍片结构分离。

公开(公告)号：US20050056845A1

公开(公告)日：2005-03-17

申请号：US10975473

申请日：2004-10-29

Applicant: Krishnashree Achuthan ,  Shibly Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Krishnashree Achuthan ,  Shibly Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/321 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L29/76

CPC classification number: H01L29/785 ,  H01L21/3212 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/6681

Abstract: A FinFET-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

Abstract translation: FinFET型半导体器件包括翅片结构，其上形成相对薄的非晶硅层，然后形成未掺杂的多晶硅层。 半导体器件可以使用化学机械抛光（CMP）进行平面化，其中非晶硅层用作阻挡层以防止损坏鳍结构。