公开(公告)号：US20050032008A1

公开(公告)日：2005-02-10

申请号：US10873382

申请日：2004-06-23

申请人： Junichiro Hosokawa ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

发明人： Junichiro Hosokawa ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

IPC分类号： G03C7/305 ,  G03C1/00 ,  G03C1/005 ,  G03C1/08 ,  G03C1/10 ,  G03C1/34 ,  G03C1/795 ,  G03C1/815 ,  G03C7/24 ,  G03C7/38 ,  G03C7/392

CPC分类号： G03C7/39296 ,  G03C1/005 ,  G03C1/10 ,  G03C1/7954 ,  G03C1/815 ,  G03C7/24 ,  G03C7/39248 ,  G03C2001/348 ,  G03C2200/10 ,  G03C2200/24 ,  Y10S430/156

摘要： A silver halide color photosensitive material has at least one blue-sensitive silver halide emulsion layer containing an yellow coupler, at least one green-sensitive silver halide emulsion layer containing a magenta coupler, at least one red-sensitive silver halide emulsion layer containing a cyan coupler, and at least one non-lightsensitive layer, on a support. The photosensitive material contains, in at least one of the layers, a compound having a reducing group and a compound having at least three hetero atoms capable of increasing a photographic speed of the photosensitive material in comparison with the case where the material does not contain the same.

摘要翻译： 卤化银色感光材料具有至少一种含有黄色成色剂的蓝色敏感性卤化银乳剂层，至少一种含有品红色成色剂的感绿卤化银乳剂层，至少一种含有青色的感红卤化银乳剂层 耦合器和至少一个非光敏层。 感光材料在至少一层中含有具有还原基团的化合物和具有至少三个能够增加感光材料的照相速度的杂原子的化合物，与材料不含 相同。

公开(公告)号：US06844444B2

公开(公告)日：2005-01-18

申请号：US10061249

申请日：2002-02-04

申请人： Yasuhiro Shimada ,  Hideki Maeta ,  Yoshio Shimura

发明人： Yasuhiro Shimada ,  Hideki Maeta ,  Yoshio Shimura

IPC分类号： C07D249/08 ,  C07D487/04 ,  G03C7/38

CPC分类号： C07D249/08 ,  C07D487/04 ,  G03C7/383

摘要： There is disclosed a 1H-pyrrole-[1,2-b][1,2,4]triazole compound represented by formula (I): wherein R is an alkyl group; R1, R2, R3, R1′, R2′, and R3′ each are a hydrogen atom or an alkyl group; R1 and R2, and R1′ and R2′ may bond together to form a ring, respectively; R4 is a hydrogen atom or an alkyl group, and X is heterocyclic group, a substituted amino group, or an aryl group. The compound is useful as a photographic cyan coupler. There is also disclosed synthetic intermediates of the compound and a production method of the intermediates.

摘要翻译： 公开了由式（I）表示的1H-吡咯 - [1,2-b] [1,2,4]三唑化合物：其中R是烷基; R1，R2，R3，R1'，R2'和R3'各自为氢原子或烷基; R 1和R 2，并且R 1'和R 2'可以分别键合在一起形成环; R4是氢原子或烷基，X是杂环基，取代氨基或芳基。 该化合物可用作照相青色成色剂。 还公开了该化合物的合成中间体和中间体的制备方法。

公开(公告)号：US06835443B2

公开(公告)日：2004-12-28

申请号：US10449103

申请日：2003-06-02

申请人： Takayuki Teshima ,  Takayuki Yagi ,  Yasuhiro Shimada ,  Takashi Ushijima

发明人： Takayuki Teshima ,  Takayuki Yagi ,  Yasuhiro Shimada ,  Takashi Ushijima

IPC分类号： B32B300

CPC分类号： G02B3/0025 ,  G02B3/0012 ,  G02B3/0031 ,  G02B3/0056 ,  Y10S428/901 ,  Y10T428/24917

摘要： In a method of fabricating an array of microstructures, a substrate with an electrically-conductive portion is provided, an insulating mask layer is formed on the electrically-conductive portion of the substrate, a plurality of openings are formed in the insulating mask layer to expose the electrically-conductive portion, and a first plated or electrodeposited layer is deposited in the openings and on the insulating mask layer by electroplating or electrodeposition. A second plated layer is further formed on the first plated or electrodeposited layer and on the electrically-conductive portion by electroless plating to reduce a size distribution of microstructures over the array.

摘要翻译： 在制造微结构阵列的方法中，提供具有导电部分的衬底，在衬底的导电部分上形成绝缘掩模层，在绝缘掩模层中形成多个开口以露出 导电部分和第一电镀或电沉积层通过电镀或电沉积沉积在开口中和绝缘掩模层上。 在第一镀层或电沉积层上和通过无电镀处理导电部分上进一步形成第二镀层，以减小阵列上微结构的尺寸分布。

公开(公告)号：US06727053B2

公开(公告)日：2004-04-27

申请号：US10106373

申请日：2002-03-27

申请人： Kiyoshi Takeuchi ,  Shigeki Uehira ,  Mario Aoki ,  Jun Ogasawara ,  Yasuhiro Shimada ,  Seiji Ichijima ,  Yasuaki Deguchi ,  Naoto Matsuda ,  Akira Ikeda ,  Hisashi Mikoshiba ,  Masaharu Sugai ,  Taiji Katsumata

发明人： Kiyoshi Takeuchi ,  Shigeki Uehira ,  Mario Aoki ,  Jun Ogasawara ,  Yasuhiro Shimada ,  Seiji Ichijima ,  Yasuaki Deguchi ,  Naoto Matsuda ,  Akira Ikeda ,  Hisashi Mikoshiba ,  Masaharu Sugai ,  Taiji Katsumata

IPC分类号： G03C108

CPC分类号： G03C1/08 ,  C07D239/90 ,  C07D285/18 ,  C07D285/24 ,  C07D403/06 ,  C07D417/06 ,  C07D417/12 ,  C07D513/04 ,  C09B55/002 ,  C09B55/003 ,  G03C7/30535 ,  G03C7/36

摘要： A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye that can be derived from the dye-forming coupler: wherein Q is a group —C(—R11)═C(—R12)—SO2—; R11 and R12 bond with each other to form, together with the —C═C— moiety, a 5- to 7-membered ring, or they each represent a hydrogen atom or a substituent; R1, R3 and R4 each represent a substituent; m is an integer of 0 to 4; and X represents a hydrogen atom or a group that splits off upon a coupling reaction with an oxidized product of a developing agent; with the proviso that the following compound (I-A) is excluded from the dye-forming coupler of formula (I).

摘要翻译： 式（I）的染料形成成色剂，含有偶合剂的卤化银照相感光材料和可衍生自染料形成成色剂的偶氮甲碱染料：其中Q为基团-C（-R 11）= C（ - R 12）-SO 2 - ; R 11和R 12彼此键合，与-C = C-部分一起形成5-至7-元环，或它们各自表示氢原子或取代基; R1，R3和R4各自表示取代基; m为0〜4的整数。 X表示氢原子或与显影剂的氧化物偶合反应时分裂的基团; 条件是从式（I）的染料形成成色剂除去下列化合物（I-A）。

公开(公告)号：US06656393B2

公开(公告)日：2003-12-02

申请号：US09360455

申请日：1999-07-26

申请人： Takayuki Yagi ,  Yasuhiro Shimada ,  Takayuki Teshima ,  Takashi Ushijima

发明人： Takayuki Yagi ,  Yasuhiro Shimada ,  Takayuki Teshima ,  Takashi Ushijima

IPC分类号： B29D1100

CPC分类号： B29C33/42 ,  B29C33/3842 ,  B29D11/00365 ,  Y10S425/808

摘要： A mold for a microlens includes a substrate at least a portion of which is electrically conductive, such as an electrically-conductive substrate or a substrate with an electrode layer, an insulating mask layer formed on the substrate and including an opening or plural openings, and a plated layer electroplated in the opening and on the mask layer. A first condition that a diameter or width (&phgr;) of the opening has a relation of &phgr;≦0.35R, wherein (R) is a radius of curvature of the plated layer right above the opening, or a second condition that the diameter or width (&phgr;) of the opening is &phgr;≦10 &mgr;m, is met.

摘要翻译： 用于微透镜的模具包括其导电性的至少一部分的基板，例如导电基板或具有电极层的基板，形成在基板上的绝缘掩模层，并且包括开口或多个开口，以及 电镀在开口和掩模层上的镀层。 第一条件是开口的直径或宽度（phi）具有phi <= 0.35R的关系，其中（R）是开口正上方的镀层的曲率半径，或第二条件，即直径或 开口的宽度（phi）为phi <= 10um。

公开(公告)号：US06614678B2

公开(公告)日：2003-09-02

申请号：US09905893

申请日：2001-07-17

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： G11C1122

CPC分类号： G11C11/22 ,  G11C11/223

摘要： A semiconductor memory of this invention contains a memory cell block including a plurality of ferroelectric capacitors successively connected to one another along a bit line direction each for storing a data in accordance with displacement of polarization of a ferroelectric film thereof, and a reading transistor whose gate is connected to one end of the successively connected plural ferroelectric capacitors for reading a data by detecting the displacement of the polarization of the ferroelectric film of a ferroelectric capacitor selected from the plural ferroelectric capacitors. A set line is connected to the other end of the successively connected plural ferroelectric capacitors. A bit line is connected to the drain of the reading transistor at one end thereof. A reset line is connected to the source of the reading transistor at one end thereof. A plurality of word lines respectively corresponding to the plural ferroelectric capacitors are provided perpendicularly to the bit line, so as to select a ferroelectric capacitor from the plural ferroelectric capacitors for data write or data read.

公开(公告)号：US06456520B1

公开(公告)日：2002-09-24

申请号：US09941736

申请日：2001-08-30

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： The semiconductor memory of this invention includes a plurality of ferroelectric capacitors successively connected to one another in a bit line direction each for storing a data in accordance with displacement of polarization of a ferroelectric film thereof; a plurality of selecting transistors respectively connected to the plurality of ferroelectric capacitor in parallel for selecting a selected ferroelectric capacitor from the plural ferroelectric capacitors; a set line connected to a first end of a series circuit including the plural successively connected ferroelectric capacitors to which a reading voltage is applied; and a load capacitor connected to a second end of the series circuit for detecting displacement of polarization of the ferroelectric film of the selected ferroelectric capacitor. In the series circuit, capacitance is larger in a ferroelectric capacitor disposed in a position relatively near to the first end of the series circuit than in a ferroelectric capacitor disposed in a position relatively far from the first end.

摘要翻译： 本发明的半导体存储器包括在位线方向上相继连接的多个铁电电容器，用于根据其铁电体膜的极化位移来存储数据; 分别与所述多个铁电电容器并联连接的多个选择晶体管，用于从所述多个铁电电容器中选择所选择的铁电电容器; 连接到串联电路的第一端的设定线，该串联电路包括多个依次连接的强电介质电容器，其中施加了读取电压; 连接到串联电路的第二端的负载电容器，用于检测所选铁电电容器的铁电体膜的极化位移。 在串联电路中，布置在比串联电路的第一端更靠近串联电路的第一端的铁电电容器中的电容大于布置在距第一端相对较远的位置的铁电电容器中的电容。

公开(公告)号：US06396095B1

公开(公告)日：2002-05-28

申请号：US09869522

申请日：2001-06-29

申请人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

发明人： Yasuhiro Shimada ,  Koji Arita ,  Kiyoshi Uchiyama

IPC分类号： H01L2976

CPC分类号： G11C11/22 ,  H01L21/28291 ,  H01L29/42324 ,  H01L29/516 ,  H01L29/78391

摘要： Source/drain regions for a field effect transistor are defined in a semiconductor substrate with a channel region interposed therebetween. A first gate electrode is formed over the semiconductor substrate with an insulating film sandwiched therebetween and has a gate length shorter than the length of the channel region. A ferroelectric film is formed to cover the first gate electrode and to have both side portions thereof make contact with the insulating film. A second gate electrode is formed to cover the ferroelectric film.

摘要翻译： 用于场效应晶体管的源极/漏极区限定在其间插入沟道区的半导体衬底中。 第一栅电极形成在半导体衬底之上，绝缘膜夹在其间，栅极长度短于沟道区的长度。 形成铁电膜以覆盖第一栅电极并且使其两侧部分与绝缘膜接触。 形成第二栅电极以覆盖铁电体膜。

公开(公告)号：US06388915B1

公开(公告)日：2002-05-14

申请号：US09941650

申请日：2001-08-30

申请人： Yoshihisa Kato ,  Yasuhiro Shimada

发明人： Yoshihisa Kato ,  Yasuhiro Shimada

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A cell selecting transistor serially connected to a data read ferroelectric capacitor selected from plural ferroelectric capacitors for data read is turned on and other cell selecting transistors serially connected to the other ferroelectric capacitors are turned off. Thus, one electrode of the data read ferroelectric capacitor is connected to a set line through a first common node, and the other electrode of the data read ferroelectric capacitor is connected to a load capacitor through a second common node. Next, after a reading voltage is applied to the set line so as to read a data stored in the data read ferroelectric capacitor, the reading voltage applied to the set line is removed. The reading voltage is set to such magnitude that displacement of polarization of the ferroelectric film of the data read ferroelectric capacitor is restored to that obtained before reading a data by removing the reading voltage.

摘要翻译： 串联连接到从用于数据读取的多个铁电电容器中选择的数据读取铁电体电容器的单元选择晶体管导通，并且与另一个强电介质电容器串联连接的其他单元选择晶体管截止。 因此，数据读取铁电电容器的一个电极通过第一公共节点连接到设定线，并且数据读取铁电电容器的另一个电极通过第二公共节点连接到负载电容器。 接下来，在将读取电压施加到设定线以便读取存储在数据读取铁电电容器中的数据之后，去除施加到设定线的读取电压。 读取电压被设定为使数据读取铁电体电容器的铁电体膜的极化位移恢复到通过去除读取电压而读取数据之前获得的极化电位。

公开(公告)号：US06351004B1

公开(公告)日：2002-02-26

申请号：US09688494

申请日：2000-10-16

申请人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

发明人： Yasuhiro Shimada ,  Shinichiro Hayashi ,  Kiyoshi Uchiyama ,  Keisuke Tanaka

IPC分类号： H01L2978

CPC分类号： H01L29/6684 ,  H01L21/28291 ,  H01L29/772 ,  H01L29/78391

摘要： A tunneling transistor is provided as an effective means for miniaturization of a semiconductor integrated circuit having nonvolatile memory. An insulating layer is disposed on a silicon substrate. A source and a drain are disposed on the insulating layer, with an insulator of a few nanometers in thickness that provides a tunnel barrier being interposed between the source and the drain. A ferroelectric layer that exhibits spontaneous polarization is disposed directly above a region of the source that is adjacent to the insulator. With this construction, when the ferroelectric layer is polarized in a predetermined direction, at least a portion of the region of the source adjacent to the insulator forms a depletion region, with it being possible to vary the amount of current tunneling through the insulator depending on whether the ferroelectric layer is polarized or not.

摘要翻译： 提供隧道晶体管作为具有非易失性存储器的半导体集成电路的小型化的有效手段。 绝缘层设置在硅衬底上。 源极和漏极设置在绝缘层上，具有几纳米厚度的绝缘体，其提供了在源极和漏极之间插入的隧道势垒。 显示自发极化的铁电层直接设置在与绝缘体相邻的源极的正上方。 利用这种结构，当铁电层在预定方向上极化时，与绝缘体相邻的源极的区域的至少一部分形成耗尽区，根据该结构，可以改变通过绝缘体的电流隧穿量 铁电层是否极化。