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190 条记录 (耗时 0.045 秒)

    Semiconductor Device and Driving Method Thereof
    121.
    发明申请
    Semiconductor Device and Driving Method Thereof 有权
    半导体器件及其驱动方法

    公开(公告)号：US20090009676A1

    公开(公告)日：2009-01-08

    申请号：US12208361

    申请日：2008-09-11

    申请人： Hajime Kimura ,  Yoshifumi Tanada

    发明人： Hajime Kimura ,  Yoshifumi Tanada

    IPC分类号： G02F1/136

    CPC分类号： G09G3/3225 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3283 ,  G09G3/3291 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2300/0876 ,  G09G2300/088 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2320/0233

    摘要： Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop. A desired drain current can thus be supplied to the EL device even if there is dispersion in the threshold values of the TFTs among pixels, because this is offset by the threshold value of the TFT.

    摘要翻译： 由于在用于向发光器件供给电流的TFT的阈值中的像素之间的像素之间在发光器件中产生的亮度不规则性成为改善发光器件的图像质量的障碍。 作为从源极信号线输入到像素的图像信号，通过其栅极和漏极彼此连接的TFT，将期望的电位施加到用于向EL器件提供电流的TFT的栅电极。 在TFT105的源极和漏极之间产生等于TFT阈值的电压。因此，将图像信号偏移阈值的电位施加到TFT的栅电极。 此外，TFT在像素内彼此靠近地布置，使得TFT特性中的分散体不容易发展。 因此，即使在像素中的TFT的阈值存在色散的情况下，也可以将所需的漏极电流提供给EL器件，因为这被TFT的阈值偏移。

    Circuit for inspecting semiconductor device and inspecting method
    122.
    发明授权
    Circuit for inspecting semiconductor device and inspecting method 有权
    检查半导体器件的电路和检查方法

    公开(公告)号：US07187204B2

    公开(公告)日：2007-03-06

    申请号：US10807692

    申请日：2004-03-24

    申请人： Yoshifumi Tanada

    发明人： Yoshifumi Tanada

    IPC分类号： H03K19/21 ,  G06K7/50

    CPC分类号： G09G3/20 ,  G01R31/2853 ,  G09G3/006 ,  G09G2330/12

    摘要： It is configured by plurality of NAND circuits connected in series through a plurality of inverters, and a plurality of NOR circuits connected in series through the plurality of inverters. Each of a plurality of source signal lines provided in a pixel portion is connected to one input terminal of a NAND circuit and a NOR circuit, and an output of an inspection is obtained from final lines of the NAND circuit and the NOR circuit connected in series. In this manner, an inspecting circuit which is capable of determining a defect simply and accurately by using a small-scale circuit, and a method thereof are provided.

    摘要翻译： 通过多个反相器串联连接的多个NAND电路以及通过多个逆变器串联连接的多个NOR电路构成。 设置在像素部分中的多个源极信号线中的每一个连接到NAND电路和NOR电路的一个输入端，并且从串联连接的NAND电路和NOR电路的最后一行获得检查的输出 。 以这种方式，提供了能够通过使用小规模电路简单且准确地确定缺陷的检查电路及其方法。

    Method of manufacturing a thin film transistor
    123.
    发明申请
    Method of manufacturing a thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20070015318A1

    公开(公告)日：2007-01-18

    申请号：US11480929

    申请日：2006-07-06

    申请人： Yoshifumi Tanada ,  Kazuya Nakajima

    发明人： Yoshifumi Tanada ,  Kazuya Nakajima

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L27/1285 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1218 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an active layer of a TFT. When a semiconductor layer is crystallized by a CW laser, one part is formed of large crystal grains whereas another part is formed of microcrystals due to the width-wise energy density distribution. The former exhibits excellent electric characteristics. The latter has poor electric characteristics because grain boundaries hinder movement of electric charges, and therefore causes inconveniences when used as an active layer of a transistor. Accordingly, circuits are arranged such that a semiconductor layer formed of large crystal grains is used for the active layer of every TFT.

    摘要翻译： 提供一种制造半导体器件的方法，其特征在于其高速操作和高可靠性，其中通过CW激光器结晶的半导体层用于TFT的有源层。 当通过CW激光使半导体层结晶化时，由于晶体的宽度方向，所以一部分由大晶粒形成，另一部分由微晶构成。 前者表现出优异的电气特性。 后者由于晶界阻碍电荷的移动而具有差的电特性，因此当用作晶体管的有源层时会引起不便。 因此，电路被布置成使得由大晶粒形成的半导体层用于每个TFT的有源层。

    Semiconductor device and method for manufacturing the same
    125.
    发明授权
    Semiconductor device and method for manufacturing the same 失效

    公开(公告)号：US07078277B2

    公开(公告)日：2006-07-18

    申请号：US10996228

    申请日：2004-11-23

    申请人： Tatsuya Arao ,  Yoshifumi Tanada ,  Hiroshi Shibata

    发明人： Tatsuya Arao ,  Yoshifumi Tanada ,  Hiroshi Shibata

    IPC分类号： H01L21/00

    CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F2201/40 ,  H01L27/1255 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645

    摘要： It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.

    Semiconductor device
    126.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20060061384A1

    公开(公告)日：2006-03-23

    申请号：US11270647

    申请日：2005-11-10

    申请人： Munehiro Azami ,  Shou Nagao ,  Yoshifumi Tanada

    发明人： Munehiro Azami ,  Shou Nagao ,  Yoshifumi Tanada

    IPC分类号： H03K19/0175

    CPC分类号： H01L29/786 ,  H03K19/01714 ,  H03K19/01721

    摘要： There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

    摘要翻译： 提供了一种半导体器件，其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。 电容（205）设置在连接到输出节点的TFT（203）的栅极和源极之间，并且由TFT（201）和（202）形成的电路具有使节点α成为浮置状态的功能 。 当节点α处于浮置状态时，通过使用TFT（203）通过电容（205）的栅 - 源电容耦合，使得节点α的电位高于VDD，因此具有VDD的幅度的输出信号 通常可以获得-GND，而不会由于TFT的阈值引起振幅衰减。

    Display device and driving method thereof
    127.
    发明申请
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号：US20050219164A1

    公开(公告)日：2005-10-06

    申请号：US10885808

    申请日：2004-07-07

    申请人： Yoshifumi Tanada

    发明人： Yoshifumi Tanada

    IPC分类号： G09G3/30

    CPC分类号： G09G3/30 ,  G09G2300/0809 ,  G09G2320/0233

    摘要： In an active matrix display device, luminance distribution due to a voltage drop in a pixel portion is reduced, thereby obtaining a uniform display. In a display device having multiple current supply paths provided around the pixel portion, a current is supplied to the pixel portion using a current supply path selected among the multiple current supply paths, and the selected current supply path is switched with the passage of time to average the voltage distribution with time.

    摘要翻译： 在有源矩阵显示装置中，由于像素部分中的电压降引起的亮度分布减小，从而获得均匀的显示。 在具有设置在像素部周围的多个电流供给路径的显示装置中，使用从多个电流供给路径中选择的电流供给路径向像素部供给电流，并且将所选择的电流供给路径随时间切换到 平均随时间的电压分布。

    Semiconductor device and manufacturing method thereof
    130.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20050040412A1

    公开(公告)日：2005-02-24

    申请号：US10941848

    申请日：2004-09-16

    申请人： Chiho Kokubo ,  Aiko Shiga ,  Yoshifumi Tanada ,  Shunpei Yamazaki

    发明人： Chiho Kokubo ,  Aiko Shiga ,  Yoshifumi Tanada ,  Shunpei Yamazaki

    IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/15

    CPC分类号： H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

    摘要： To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.

    摘要翻译： 提供通过使用薄膜晶体管来有效地配置需要高的器件间一致性的电路的方法。 在衬底上形成半导体层并将其图案化成所需的形状以形成第一半导体岛。 第一半导体岛在其表面区域内被激光照射均匀结晶。 此后，将半导体层图案化成所需的形状，成为薄膜晶体管层的有源层。 在这种情况下，构成一体电路的所有薄膜晶体管的有源层由第一半导体岛之一形成。 因此，TFT相互实现高一致性。