公开(公告)号：US20120074376A1

公开(公告)日：2012-03-29

申请号：US13312061

申请日：2011-12-06

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L47/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US08097878B2

公开(公告)日：2012-01-17

申请号：US11714326

申请日：2007-03-05

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L29/12 ,  H01L29/02

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20110194557A1

公开(公告)日：2011-08-11

申请号：US12702718

申请日：2010-02-09

Applicant: Alex Baban ,  Jean-Marc Frailong ,  Kireeti Kompella ,  Nitin Kumar ,  Jamsheed Wania ,  Murtuza Attarwala

Inventor： Alex Baban ,  Jean-Marc Frailong ,  Kireeti Kompella ,  Nitin Kumar ,  Jamsheed Wania ,  Murtuza Attarwala

IPC: H04L12/56

CPC classification number: H04L12/18 ,  H04L45/16 ,  H04L49/10 ,  H04L49/201

Abstract: A network device receives a packet with a multicast nexthop identifier, and creates a mask that includes addresses of egress packet forwarding engines, of the network device, to which to provide the packet. The network device divides the mask into two portions, generates two copies of the packet, provides a first portion of the mask in a first copy of the packet, and provides a second portion of the mask in a second copy of the packet. The network device also forwards the first copy of the packet to an address of a first egress packet forwarding engine provided in the first portion of the mask, and forwards the second copy of the packet to an address of a second egress packet forwarding engine provided in the second portion of the mask.

Abstract translation: 网络设备接收具有多播下一标识符的分组，并创建包括提供分组的网络设备的出站分组转发引擎的地址的掩码。 网络设备将掩码分成两部分，生成分组的两个副本，在分组的第一副本中提供该掩码的第一部分，并在分组的第二副本中提供该掩码的第二部分。 网络设备还将分组的第一副本转发到在掩码的第一部分中提供的第一出口分组转发引擎的地址，并将分组的第二副本转发到提供的第二出口分组转发引擎的地址 掩模的第二部分。

公开(公告)号：US07960313B2

公开(公告)日：2011-06-14

申请号：US11763180

申请日：2007-06-14

Applicant: Zachary Fresco ,  Nitin Kumar

Inventor： Zachary Fresco ,  Nitin Kumar

IPC: C40B60/14 ,  C40B60/00 ,  B01L3/00 ,  B01L99/00

CPC classification number: B01J19/0046 ,  B01J2219/00333 ,  B01J2219/00364 ,  B01J2219/00389 ,  B01J2219/00481 ,  B01J2219/00527 ,  B01J2219/00596 ,  B01J2219/00756

Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.

Abstract translation: 描述了包括搅拌在内的组合处理，包括限定衬底的多个区域，以组合的方式处理衬底的多个区域，将流体引入到身体的第一端的第一孔中，以将流体从第二孔 在所述主体的第二端并且进入所述多个区域之一，并且在所述主体的第二端处使用叶轮来搅动所述流体，以促进所述流体与所述基板的表面的相互作用。

公开(公告)号：US07830096B2

公开(公告)日：2010-11-09

申请号：US11931860

申请日：2007-10-31

Applicant: Timothy Chen ,  Nitin Kumar ,  James K. Skully

Inventor： Timothy Chen ,  Nitin Kumar ,  James K. Skully

IPC: H05B39/04

CPC classification number: H05B41/2825 ,  H05B41/2827

Abstract: A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.

Abstract translation: 基于电流馈电的双极结型晶体管（BJT）的逆变器镇流器包括被配置为驱动相应的BJT开关的基极驱动电路和被配置为与相应的基极驱动电路一起工作的高速驱动反向峰值限流电路。

公开(公告)号：US07759880B2

公开(公告)日：2010-07-20

申请号：US12029811

申请日：2008-02-12

Applicant: Istvan Maros ,  Istvan Peter Bakk ,  Louis R. Nerone ,  Timothy Chen ,  Nitin Kumar

Inventor： Istvan Maros ,  Istvan Peter Bakk ,  Louis R. Nerone ,  Timothy Chen ,  Nitin Kumar

IPC: H05B37/00

CPC classification number: H05B35/00 ,  H01J61/327 ,  H05B41/2827

Abstract: A circuit or combined ballast for driving a fluorescent lamp and at least one light emitting diode (LED) includes an integrated driver circuit having an alternating current (AC) circuit that includes at least one ballast coil for driving the fluorescent lamp and a direct current circuit for driving the LED having a secondary winding inductively coupled with the fluorescent lamp ballast coil for driving the LED. A method of driving a lamp assembly includes at least one fluorescent lamp and at least one light emitting diode (LED) and a combined driver circuit for supplying both the fluorescent lamp and the LED. The combined driver circuit supplies high voltage AC supply to a first portion of the driver circuit to the fluorescent lamp, supplies low voltage DC supply in a second portion of the driver circuit to the LED, and provides a secondary winding in the second portion of the driver circuit that is inductively coupled with a ballast coil in the first portion of the driver circuit that drives the fluorescent lamp.

Abstract translation: 用于驱动荧光灯和至少一个发光二极管（LED）的电路或组合镇流器包括具有交流（AC）电路的集成驱动器电路，其包括用于驱动荧光灯的至少一个镇流器线圈和直流电路 用于驱动具有与用于驱动LED的荧光灯镇流器线圈感应耦合的次级绕组的LED。 驱动灯组件的方法包括至少一个荧光灯和至少一个发光二极管（LED）和用于提供荧光灯和LED两者的组合驱动电路。 组合的驱动器电路向驱动电路的第一部分提供高压AC电源到荧光灯，将驱动电路的第二部分中的低电压DC电源提供给LED，并且在第二部分中提供次级绕组 驱动电路，其与驱动电路的驱动电路的第一部分中的镇流器线圈感应耦合。

公开(公告)号：US20090313610A1

公开(公告)日：2009-12-17

申请号：US12137683

申请日：2008-06-12

Applicant: Basu Vaidyanathan ,  Kavana Nandikur Bhat ,  Nitin Kumar

Inventor： Basu Vaidyanathan ,  Kavana Nandikur Bhat ,  Nitin Kumar

IPC: G06F9/44

CPC classification number: G06F11/362

Abstract: A load store advisory program sets a breakpoint within a portion of a program, determines if the breakpoint will cause unexpected behavior, and generates a warning if it is determined that the breakpoint will cause unexpected behavior. The unexpected behavior may be the result of setting a breakpoint within a load-store sequence that, because of the breakpoint, will repeatedly fail.

Abstract translation: 加载存储咨询程序在程序的一部分内设置断点，确定断点是否会导致意外行为，如果确定断点将导致意外行为，则会生成警告。 意外的行为可能是在加载存储序列中设置断点的结果，因为断点将会重复出现故障。

公开(公告)号：US20090291275A1

公开(公告)日：2009-11-26

申请号：US12471310

申请日：2009-05-22

Applicant: Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

Inventor： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC: B32B3/00 ,  B05D5/12 ,  B05D3/04

CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US20080185573A1

公开(公告)日：2008-08-07

申请号：US11702967

申请日：2007-02-05

Applicant: Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

Inventor： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20080185572A1

公开(公告)日：2008-08-07

申请号：US11702725

申请日：2007-02-05

Applicant: Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

Inventor： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.