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公开(公告)号：US20120001320A1
公开(公告)日：2012-01-05
申请号：US12979627
申请日：2010-12-28
Applicant: Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
Inventor： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC: H01L23/48
CPC classification number: H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。
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公开(公告)号：US08426970B2
公开(公告)日：2013-04-23
申请号：US12979627
申请日：2010-12-28
Applicant: Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
Inventor： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC: H01L23/52 , H01L23/532
CPC classification number: H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
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3.发明申请公开(公告)号：US20090047881A1
公开(公告)日：2009-02-19
申请号：US11838653
申请日：2007-08-14
Applicant: Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
Inventor： Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
IPC: B24B7/04 , H01L21/461
CPC classification number: H01L21/67046 , B24B37/00 , C25D17/00 , C25D21/12 , H01L21/67051 , H01L21/68764 , H01L21/68785
Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.
Abstract translation: 描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理 并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。
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公开(公告)号：US07960313B2
公开(公告)日：2011-06-14
申请号：US11763180
申请日：2007-06-14
Applicant: Zachary Fresco , Nitin Kumar
Inventor： Zachary Fresco , Nitin Kumar
CPC classification number: B01J19/0046 , B01J2219/00333 , B01J2219/00364 , B01J2219/00389 , B01J2219/00481 , B01J2219/00527 , B01J2219/00596 , B01J2219/00756
Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.
Abstract translation: 描述了包括搅拌在内的组合处理，包括限定衬底的多个区域，以组合的方式处理衬底的多个区域，将流体引入到身体的第一端的第一孔中，以将流体从第二孔 在所述主体的第二端并且进入所述多个区域之一，并且在所述主体的第二端处使用叶轮来搅动所述流体，以促进所述流体与所述基板的表面的相互作用。
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公开(公告)号：US20090291275A1
公开(公告)日：2009-11-26
申请号：US12471310
申请日：2009-05-22
Applicant: Jinhong Tong , Zhi-Wen Sun , Chi-I Lang , Nitin Kumar , Bob Kong , Zachary Fresco
Inventor： Jinhong Tong , Zhi-Wen Sun , Chi-I Lang , Nitin Kumar , Bob Kong , Zachary Fresco
CPC classification number: H01L21/288 , C23C18/1605 , C23C18/168 , C23C18/50 , H01L21/0332 , H01L21/3105 , H01L21/76829 , H01L21/76849
Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.
Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。
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Patent Agency Ranking
6.发明授权公开(公告)号：US07785172B2
公开(公告)日：2010-08-31
申请号：US11838653
申请日：2007-08-14
Applicant: Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
Inventor： Peter Satitpunwaycha , Richard Endo , Zachary Fresco , Nitin Kumar
CPC classification number: H01L21/67046 , B24B37/00 , C25D17/00 , C25D21/12 , H01L21/67051 , H01L21/68764 , H01L21/68785
Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.
Abstract translation: 描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理 并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。
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公开(公告)号：US08551560B2
公开(公告)日：2013-10-08
申请号：US12471310
申请日：2009-05-22
Applicant: Jinhong Tong , Zhi-Wen Sun , Chi-I Lang , Nitin Kumar , Bob Kong , Zachary Fresco
Inventor： Jinhong Tong , Zhi-Wen Sun , Chi-I Lang , Nitin Kumar , Bob Kong , Zachary Fresco
CPC classification number: H01L21/288 , C23C18/1605 , C23C18/168 , C23C18/50 , H01L21/0332 , H01L21/3105 , H01L21/76829 , H01L21/76849
Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.
Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。
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公开(公告)号：US20110199853A1
公开(公告)日：2011-08-18
申请号：US13096675
申请日：2011-04-28
Applicant: Zachary Fresco , Nitin Kumar
Inventor： Zachary Fresco , Nitin Kumar
CPC classification number: B01J19/0046 , B01J2219/00333 , B01J2219/00364 , B01J2219/00389 , B01J2219/00481 , B01J2219/00527 , B01J2219/00596 , B01J2219/00756
Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.
Abstract translation: 描述了包括搅拌在内的组合处理，包括限定衬底的多个区域，以组合的方式处理衬底的多个区域，将流体引入到身体的第一端的第一孔中，以将流体从第二孔 在所述主体的第二端并且进入所述多个区域之一，并且在所述主体的第二端处使用叶轮来搅动所述流体，以促进所述流体与所述基板的表面的相互作用。
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公开(公告)号：US07879710B2
公开(公告)日：2011-02-01
申请号：US11647882
申请日：2006-12-29
Applicant: Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
Inventor： Zachary Fresco , Chi-I Lang , Sandra G. Malhotra , Tony P. Chiang , Thomas R. Boussie , Nitin Kumar , Jinhong Tong , Anh Duong
IPC: H01L21/44
CPC classification number: H01L21/288 , B82Y30/00 , H01L21/3105 , H01L21/31058 , H01L21/76834 , H01L21/76849 , H01L21/7685
Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。
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公开(公告)号：US20080312090A1
公开(公告)日：2008-12-18
申请号：US11763180
申请日：2007-06-14
Applicant: Zachary Fresco , Nitin Kumar
Inventor： Zachary Fresco , Nitin Kumar
CPC classification number: B01J19/0046 , B01J2219/00333 , B01J2219/00364 , B01J2219/00389 , B01J2219/00481 , B01J2219/00527 , B01J2219/00596 , B01J2219/00756
Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.
Abstract translation: 描述了包括搅拌在内的组合处理，包括限定衬底的多个区域，以组合的方式处理衬底的多个区域，将流体引入到身体的第一端的第一孔中，以将流体从第二孔 在所述主体的第二端并且进入所述多个区域之一，并且在所述主体的第二端处使用叶轮来搅动所述流体，以促进所述流体与所述基板的表面的相互作用。
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