公开(公告)号：US4953155A

公开(公告)日：1990-08-28

申请号：US146062

申请日：1988-01-20

Applicant: Gregory L. Tangonan ,  Vincent L. Jones ,  Stephen R. Forrest

Inventor： Gregory L. Tangonan ,  Vincent L. Jones ,  Stephen R. Forrest

IPC: H03K17/78 ,  H03K17/693 ,  H04B10/02 ,  H04Q3/52

CPC classification number: H04L12/5696

Abstract: An optoelectronic crossbar switch 50 for selectively connecting signals on a plurality of optical fiber channels 52 to a given number of output receivers 30-36. Each optical fiber channel is split into a different number of optical fibers 56(a-h) which are arranged into an array having a plurality of rows and columns. Each row contains a fiber from each channel. A current summation network 58 is provided for each row and advantageously employs a plurality of selectively activatable detectors 60-74. The detectors are held in their open circuit state via a CMOS multiplexer 80 so as to minimize crosstalk between addressed and nonaddressed detectors. The switch 50 construction also minimizes the number of required components.

Abstract translation: 用于选择性地将多个光纤通道52上的信号连接到给定数量的输出接收器30-36的光电交叉开关50。 每个光纤通道被分成不同数量的光纤56（a-h），其布置成具有多个行和列的阵列。 每行包含每个通道的光纤。 为每行提供电流求和网络58，并有利地使用多个可选择性激活的检测器60-74。 检测器通过CMOS多路复用器80保持在开路状态，以便最小化寻址和非寻址检测器之间的串扰。 开关50结构还使所需部件的数量最小化。

公开(公告)号：US4894703A

公开(公告)日：1990-01-16

申请号：US767613

申请日：1985-08-20

Applicant: Mahmoud A. E. Hamamsy ,  Stephen R. Forrest ,  John R. Zuber

Inventor： Mahmoud A. E. Hamamsy ,  Stephen R. Forrest ,  John R. Zuber

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC classification number: H01L31/02161 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/105

Abstract: A back-illuminated InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants.

Abstract translation: 描述了背照式InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。 为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分 部分以密封表面免受污染物的引入。

公开(公告)号：US4771325A

公开(公告)日：1988-09-13

申请号：US700441

申请日：1985-02-11

Applicant: Julian Cheng ,  Bernard C. DeLoach, Jr. ,  Stephen R. Forrest

Inventor： Julian Cheng ,  Bernard C. DeLoach, Jr. ,  Stephen R. Forrest

IPC: H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/10 ,  H01L31/105 ,  H01L33/00

CPC classification number: H01L31/105 ,  H01L27/1443

Abstract: An integrated photodetector-amplifier is described which is planar and exhibits excellent circuit characteristics including low input capacitance, high speed, and high sensitivity. Also, certain self-alignment features and a planar technology made fabrication of the circuits simpler and easier than most such circuits.

Abstract translation: 描述了一种平面的集成光电检测器 - 放大器，并且具有包括低输入电容，高速度和高灵敏度的优异的电路特性。 此外，某些自对准特征和平面技术使得电路的制造比大多数这样的电路更简单和容易。

公开(公告)号：US4611385A

公开(公告)日：1986-09-16

申请号：US602700

申请日：1984-04-23

Applicant: Stephen R. Forrest ,  Martin L. Kaplan ,  Paul H. Schmidt

Inventor： Stephen R. Forrest ,  Martin L. Kaplan ,  Paul H. Schmidt

IPC: H01L51/42 ,  C07D471/00 ,  G02B6/30 ,  G02B6/34 ,  G02B6/42 ,  H01L21/66 ,  H01L27/14 ,  H01L29/45 ,  H01L51/00 ,  H01L51/30 ,  H01L29/28

CPC classification number: H01L51/4213 ,  G02B6/12007 ,  G02B6/30 ,  G02B6/42 ,  G02B6/4246 ,  H01L29/452 ,  H01L51/0587 ,  G02B6/29319 ,  H01L51/0053 ,  Y02E10/549

Abstract: The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.

Abstract translation: 使用具有共轭环系的有机材料，例如与诸如硅之类的半导体材料接合的3,4,9,10-苝四羧酸二酐产生相当可接受的整流性能。 这些性质用于测试处理过程中基材的适用性。 此外，这些材料在照射时改变折射率，允许制造诸如光栅的光学装置。 使用这些有机材料形成的电气和光学器件的组合也允许相对简单地制造集成的光电结构。

公开(公告)号：US4473835A

公开(公告)日：1984-09-25

申请号：US275346

申请日：1981-06-19

Applicant: Stephen R. Forrest ,  Ock-Ky Kim ,  Richard G. Smith

Inventor： Stephen R. Forrest ,  Ock-Ky Kim ,  Richard G. Smith

IPC: H01L31/107 ,  H01L27/14 ,  H01L29/161 ,  H01L29/90

CPC classification number: H01L31/1075

Abstract: An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.

Abstract translation: 实现了在具有低噪声的波长长达1.7微米的情况下可用的雪崩光电探测器。 所使用的晶体包括p型磷化铟，n型磷化铟和n型砷化铟镓的连续层。 在n型磷化铟和梯度带隙异质界面区域中适当的固定电荷总量对于改进的结果是重要的。

公开(公告)号：US4414066A

公开(公告)日：1983-11-08

申请号：US416472

申请日：1982-09-10

Applicant: Stephen R. Forrest ,  Paul A. Kohl ,  Richard L. Panock

Inventor： Stephen R. Forrest ,  Paul A. Kohl ,  Richard L. Panock

IPC: C25F3/12 ,  H01L21/3063 ,  H01L21/465 ,  H01L21/467

CPC classification number: H01L21/467 ,  C25F3/12 ,  H01L21/30635 ,  H01L21/465

Abstract: A procedure is described for electrochemically photoetching n-type and intrinsic compound semiconductors. The process involves applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.

Abstract translation: 描述了用于电化学光刻n型和本征化合物半导体的方法。 该方法包括在化合物半导体与电解液接触的同时施加电位，并在一定的能量范围内用光照射被蚀刻的表面。 通过适当调整电位，电解液组成和光能，刻蚀速率与光强成正比。 通过适当的光强度和光线方向的变化，可以在化合物半导体的表面上形成各种几何特征。 例如，可以通过使用光点和平行（准直）光线在化合物半导体中制造具有直边的孔。 该方法的有利应用是制造在中心具有用于双向通信系统的孔的光电二极管，并监视光通信源的功率输出。 该方法的优点是在蚀刻孔外部不产生损伤，使得光电二极管的最大面积保持活跃以检测入射辐射。 该方法的另一个优点是，在材料变为p型的情况下，蚀刻将停止，使得蚀刻可以在p / n结处自动停止。

公开(公告)号：US11302881B2

公开(公告)日：2022-04-12

申请号：US13099716

申请日：2011-05-03

Applicant: Stephen R. Forrest ,  Noel C. Giebink

Inventor： Stephen R. Forrest ,  Noel C. Giebink

IPC: H01L31/00 ,  H01L51/00 ,  H01L51/42

Abstract: The present disclosure generally relates to organic photosensitive optoelectronic devices and polaron pair recombination dynamics to impact efficiency and open circuit voltages of organic solar cells. The present disclosure also relates, in part, to methods of making organic photosensitive optoelectronic devices comprising the same.

公开(公告)号：US09130170B2

公开(公告)日：2015-09-08

申请号：US13666664

申请日：2012-11-01

Applicant: Stephen R. Forrest ,  Xiaoran Tong ,  Jun Yeob Lee ,  Yong Joo Cho

Inventor： Stephen R. Forrest ,  Xiaoran Tong ,  Jun Yeob Lee ,  Yong Joo Cho

IPC: H01L51/44 ,  H01L51/00 ,  B82Y10/00 ,  H01L27/30 ,  H01L27/146 ,  H01L51/42

CPC classification number: H01L51/003 ,  B82Y10/00 ,  H01L27/14643 ,  H01L27/30 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0097 ,  H01L51/424 ,  Y02E10/549

Abstract: There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device including a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device including a stainless steel foil reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode over the donor-acceptor heterojunction.

Abstract translation: 公开了一种制备金属基材表面的方法。 本公开还涉及包括通过这种方法制造的金属衬底的有机光伏器件。 本文还公开了一种反转感光装置，其包括不锈钢箔反射电极，反射电极上的有机供体 - 受体异质结，以及供体 - 受体异质结上方的透明电极。

公开(公告)号：US08931431B2

公开(公告)日：2015-01-13

申请号：US12729448

申请日：2010-03-23

Applicant: Stephen R. Forrest ,  Gregory McGraw

Inventor： Stephen R. Forrest ,  Gregory McGraw

IPC: C23C16/44 ,  C23C16/52 ,  B41J2/005 ,  C23C14/04 ,  C23C14/12 ,  C23C14/22 ,  C23C16/22

CPC classification number: C23C14/12 ,  B41J2/005 ,  C23C14/04 ,  C23C14/228

Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Abstract translation: 提供第一个设备。 该装置包括打印头。 打印头还包括密封到第一气体源的第一喷嘴。 第一喷嘴在垂直于第一喷嘴的流动方向的方向上具有最小尺寸为0.5至500微米的孔。 在与第一喷嘴的孔的最小尺寸的5倍的孔到第一喷嘴的距离处，垂直于流动方向的最小尺寸至少是第一喷嘴的孔的最小尺寸的两倍。

公开(公告)号：US08912036B2

公开(公告)日：2014-12-16

申请号：US12197195

申请日：2008-08-22

Applicant: Stephen R. Forrest ,  Richard R. Lunt

Inventor： Stephen R. Forrest ,  Richard R. Lunt

IPC: H01L21/00 ,  H01L31/00 ,  H01L51/00 ,  B82Y10/00 ,  H01L51/42

CPC classification number: H01L51/424 ,  B82Y10/00 ,  C23C14/12 ,  C23C14/228 ,  H01L51/0008 ,  H01L51/0013 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0078 ,  Y02E10/549

Abstract: There is disclosed methods utilizing organic vapor phase deposition for growing bulk organic crystalline layers for organic photosensitive devices, heterojunctions and films made by such methods, and devices using such heterojunctions. There is also disclosed new methods for manufacturing heterojunctions and organic photosensitive devices, and the heterojunctions and devices manufactured thereby.

Abstract translation: 公开了利用有机气相沉积来生长有机光敏器件的本体有机结晶层的方法，通过这种方法制造的异质结和膜以及使用这种异质结的器件。 还公开了用于制造异质结和有机光敏器件的新方法，以及由此制造的异质结和器件。