公开(公告)号：US20110163272A1

公开(公告)日：2011-07-07

申请号：US13060849

申请日：2008-09-03

申请人： Koji Ono ,  Atsushi Honda ,  Tadashi Matsushita ,  Mitsumasa Saito

发明人： Koji Ono ,  Atsushi Honda ,  Tadashi Matsushita ,  Mitsumasa Saito

IPC分类号： H01B1/20 ,  H01M4/60 ,  B05D3/02 ,  H01M4/04

CPC分类号： H01M10/052 ,  H01M4/0416 ,  H01M4/0471 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/621 ,  H01M4/625

摘要： Disclosed is a method for producing an electrode material which has high discharge capacity at high charge/discharge rate and enables to realize sufficient charge/discharge rate performance. Also disclosed are an electrode material, an electrode and a lithium ion battery. Specifically disclosed is a method for producing an electrode material, which is characterized in that a slurry containing an electrode active material or a precursor of the electrode active material, and organic compounds each selected from at least two groups among the group A, group B and group C is sprayed and dried for forming a granule, and the thus-formed granule is fired at a temperature not less than 500° C. but not more than 1000° C. in a non-oxidizing atmosphere.

摘要翻译： 公开了一种在高充电/放电速率下具有高放电容量的电极材料的制造方法，能够实现充分/充放电率的充分性能。 还公开了电极材料，电极和锂离子电池。 具体公开了一种电极材料的制造方法，其特征在于，含有电极活性物质或电极活性物质前体的浆料，以及分别选自A组，B组和 将组C喷雾干燥以形成颗粒，将这样形成的颗粒在非氧化性气氛中在不低于500℃但不超过1000℃的温度下焙烧。

公开(公告)号：US20110024757A1

公开(公告)日：2011-02-03

申请号：US12849866

申请日：2010-08-04

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC分类号： H01L33/16

CPC分类号： H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

摘要翻译： 为了形成栅电极，层叠具有低电阻的包含Al或以Al为主要成分的材料的导电膜和用于防止Al扩散到半导体层中的具有低接触电阻的导电膜，并且栅电极由 使用能够高速进行蚀刻处理的装置。

公开(公告)号：US07759629B2

公开(公告)日：2010-07-20

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US07692528B2

公开(公告)日：2010-04-06

申请号：US11359828

申请日：2006-02-22

申请人： Takumi Nishimoto ,  Koji Ono ,  Jun Sato

发明人： Takumi Nishimoto ,  Koji Ono ,  Jun Sato

IPC分类号： H01C10/32

CPC分类号： H01H19/58 ,  Y10T29/49105

摘要： A rotary electronic component is capable of preventing misalignment of another component placed in its hollow portion and maintaining the quality of an electronic device on which to mount the rotary electronic component. The rotary electronic component has an approximately annular shape with a hollow portion. The other component placed inside the hollow portion is positioned by the positioning member formed inside the hollow portion.

摘要翻译： 旋转电子部件能够防止放置在其中空部分中的另一部件的不对准并保持安装旋转电子部件的电子设备的质量。 旋转电子部件具有中空部分的近似环形。 放置在中空部内的另一部件通过形成在中空部内的定位部件定位。

公开(公告)号：US07589382B2

公开(公告)日：2009-09-15

申请号：US11752437

申请日：2007-05-23

申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

IPC分类号： H01L29/94

CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66598 ,  H01L29/78621 ,  H01L2029/7863

摘要： In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.

摘要翻译： 在诸如有源矩阵显示器的半导体器件的制造中，在光刻中对抗蚀剂掩模进行图案化的需要增加了制造工艺中的步骤数量和完成它们所需的时间，因此代表了大量成本。 本发明提供了一种用于在半导体层中以自对准的方式将杂质元素掺杂到半导体层303中以形成两层栅电极的上层（第二导电膜306）作为掩模来形成杂质区的方法。 杂质元素通过栅电极的下层（第一导电膜305）掺杂到半导体层中，并通过栅极绝缘膜304掺杂。通过这种方式，在半导体中形成GOLD结构的LDD区域313 层303。

公开(公告)号：USD597947S1

公开(公告)日：2009-08-11

申请号：US29300235

申请日：2008-03-04

申请人： Koji Ono

设计人： Koji Ono

公开(公告)号：US20090107821A1

公开(公告)日：2009-04-30

申请号：US12233765

申请日：2008-09-19

申请人： Koji Ono

发明人： Koji Ono

IPC分类号： H01H13/14

CPC分类号： H01H13/14 ,  H01H2203/032 ,  H01H2215/006

摘要： A push switch includes a housing having a top opening and a recessed section at a lower part, a push-type switch contact placed on an inner bottom face of the recessed section, an operating unit having an operating section at an upper part and a flange section at a lower part, a resilient unit placed under the operating unit in the recessed section for energizing the operating unit upward, and a cover for covering the top opening and having a center hole from which the operating section extends upward. The operating unit is movable vertically guided by a guide projection placed on inner walls confronting each other of the recessed section and extending vertically and by a concave section formed on the flange section for mating with the guide projection. The operating section includes faces vertically rising from the positions where the concave sections are recessed most inward.

摘要翻译： 按钮开关包括具有顶部开口和在下部的凹入部分的壳体，位于凹部的内底面上的推动型开关触点，具有上部的操作部分的操作单元和凸缘 位于下部的弹性单元，设置在凹部中的操作单元下方，用于向上施力操作单元的弹性单元，以及用于覆盖顶部开口并具有操作部分向上延伸的中心孔的盖。 操作单元可以通过设置在相对于凹部的内壁上的引导突起垂直地引导并且在垂直方向上延伸并且形成在凸缘部分上的与引导突起配合的凹部。 操作部分包括从凹部最向内凹进的位置垂直上升的面。

公开(公告)号：US07482274B2

公开(公告)日：2009-01-27

申请号：US11105917

申请日：2005-04-14

申请人： Koji Ono ,  Hideomi Suzawa

发明人： Koji Ono ,  Hideomi Suzawa

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

摘要翻译： 提供适合于大尺寸基板的金属布线。 本发明的特征在于，在绝缘表面上形成至少一层导电膜，在导电膜上形成抗蚀剂图案，并且蚀刻具有抗蚀剂图案的导电膜以形成金属布线，同时控制其锥度 根据偏置功率密度，ICP功率密度，下部电极的温度，压力，蚀刻气体的总流量，或蚀刻气体中的氧气或氯气的比例来确定角度α。 这样形成的金属布线的宽度或长度波动较小，并且可以令人满意地处理基板尺寸的增加。

公开(公告)号：US20080230682A1

公开(公告)日：2008-09-25

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H03F3/08 ,  H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US20080014926A1

公开(公告)日：2008-01-17

申请号：US11822893

申请日：2007-07-11

申请人： Koji Ono

发明人： Koji Ono

IPC分类号： H04Q7/20

CPC分类号： H04W76/22 ,  H04W36/08

摘要： Disclosed is a mobile communication terminal including: a user information storage unit for storing user information having a terminal identifier for identifying an arbitrary communication terminal, and a user identifier for identifying the user of the communication terminal associated with each other; an identifier storage unit for storing, at the time of beginning of a call with the other party of the call, a first identifier for identifying the communication terminal of the other party of the call; a terminal identifier determination unit for determining whether the first terminal identifier and a second terminal identifier are associated with the same user identifier, with reference to the user information, upon receipt of a call-out signal including the second terminal identifier during the call with the communication terminal of the other party; and a call controller for handing over the call to a communication terminal indicated by the second terminal identifier when the terminal identifier determination unit determines that the first and second terminal identifiers are associated with the same user identifier.

摘要翻译： 公开了一种移动通信终端，包括：用户信息存储单元，用于存储具有用于识别任意通信终端的终端标识符的用户信息和用于识别彼此相关联的通信终端的用户的用户标识符; 标识符存储单元，用于在与呼叫的另一方的呼叫开始时存储用于识别呼叫的另一方的通信终端的第一标识符; 终端标识符确定单元，用于参考用户信息确定第一终端标识符和第二终端标识符是否与相同的用户标识符相关联，在接收到呼叫期间包括第二终端标识符的呼出信号时， 对方通信终端; 以及呼叫控制器，当所述终端标识符确定单元确定所述第一和第二终端标识符与相同的用户标识符相关联时，将所述呼叫切换到由所述第二终端标识符指示的通信终端。