公开(公告)号：US07671320B2

公开(公告)日：2010-03-02

申请号：US12328978

申请日：2008-12-05

申请人： Atsushi Hirose ,  Tatsuya Arao

发明人： Atsushi Hirose ,  Tatsuya Arao

IPC分类号： H01L31/00

CPC分类号： H01L27/1443 ,  G01J1/1626 ,  G01J1/4228 ,  G01J1/44

摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.

摘要翻译： 半导体器件包括第一光电二极管，屏蔽光的第二光电二极管，包括电压跟随器电路，第二电路组和补偿电路的第一电路组，其中第一光电二极管的输出被输入到电压 第一电路组的跟随器电路，第一电路组的输出被输入到补偿电路，并且来自第二光电二极管的输出通过第二电路组输入到补偿电路。 通过在补偿电路中增加或减去这些输入，消除由于第一光电二极管的温度引起的输出波动。 注意，参考电位被提供给第一光电二极管，使得输出开路电压，并且向第二光电二极管提供电位，使得正向偏压被施加到第二光电二极管。

公开(公告)号：US20090321666A1

公开(公告)日：2009-12-31

申请号：US12439798

申请日：2007-09-18

申请人： Achim Hilgers

发明人： Achim Hilgers

IPC分类号： H01L31/167 ,  H01L31/0232

CPC分类号： H05B37/0272 ,  H01L27/1443 ,  H01L31/02162

摘要： The present invention relates to a light sensor device comprising a substrate (18), a first light sensitive area (14, 15), and a second light sensitive area (12, 13). It is characterized in that a first optical filter device (22) assigned to said first area (14) and adapted to filter the visible light spectrum and a second optical filter device (24) assigned to said second area (12) and adapted to filter the non-visible light spectrum, preferably IR light spectrum, are provided, and said first and second light sensitive areas (12, 14) are fabricated on the same substrate (18) adjacent to each other to form a single integrated sensor component (10). The invention also relates to a lamp device (60) comprising such a light sensor device.

摘要翻译： 本发明涉及一种光传感器装置，包括基板（18），第一光敏区（14,15）和第二光敏区（12,13）。 其特征在于，分配给所述第一区域（14）并适于对可见光光谱进行滤波的第一光学滤波器装置（22）和分配给所述第二区域（12）的第二滤光器装置（24）并适于滤波 提供非可见光谱，优选IR光谱，并且所述第一和第二光敏区域（12,14）制造在彼此相邻的相同基板（18）上，以形成单个集成传感器部件（10 ）。 本发明还涉及包括这种光传感器装置的灯装置（60）。

公开(公告)号：US07514687B2

公开(公告)日：2009-04-07

申请号：US10574600

申请日：2004-09-30

申请人： Hiroshi Akahori ,  Tatsuki Kasuya

发明人： Hiroshi Akahori ,  Tatsuki Kasuya

IPC分类号： G01T1/24

CPC分类号： H04N5/335 ,  H01L27/1443

摘要： The present invention relates to an energy ray detecting element having a structure for reducing noise effectively. The energy ray detecting element comprises an energy ray sensitive region, an output section, a plurality of electrodes, and a voltage dividing circuit. The energy ray sensitive region generates charges in response to the incidence of energy rays. On the surface of the energy ray sensitive region, each of the plurality of electrodes is arranged so as to cover a part of the energy ray sensitive region. Each electrode is electrically connected to the voltage dividing circuit that includes a plurality of voltage dividing resistors serially connected to each other. The voltage dividing circuit divides a DC output voltage from a DC power supply by using the voltage dividing resistors, and thereby providing a corresponding DC output potential to each of the electrodes. The output section accumulates the charges generated in the energy ray sensitive region and outputs a current signal or a voltage signal corresponding to the accumulated charge amount.

摘要翻译： 本发明涉及一种能够有效降低噪声的结构的能量射线检测元件。 能量射线检测元件包括能量射线敏感区域，输出部分，多个电极和分压电路。 能量射线敏感区域响应于能量射线的发生而产生电荷。 在能量射线敏感区域的表面上，多个电极中的每一个被布置成覆盖能量射线敏感区域的一部分。 每个电极电连接到包括彼此串联连接的多个分压电阻器的分压电路。 分压电路通过使用分压电阻器将直流输出电压与直流电源分压，从而为每个电极提供相应的直流输出电位。 输出部分累积在能量射线敏感区域中产生的电荷，并输出与累积电荷量对应的电流信号或电压信号。

公开(公告)号：US07435943B1

公开(公告)日：2008-10-14

申请号：US11693600

申请日：2007-03-29

申请人： Farn Hin Chen ,  Gim Eng Chew ,  Boon Keat Tan

发明人： Farn Hin Chen ,  Gim Eng Chew ,  Boon Keat Tan

IPC分类号： G01J3/50

CPC分类号： H01L31/145 ,  G01J3/51 ,  G01J3/513 ,  G01J3/52 ,  G01J3/524 ,  H01L27/1443 ,  H01L31/02162

摘要： A light sensor that generates a first output signal indicative of an intensity of light received from a predetermined direction in a first band of wavelengths is disclosed. The light sensor includes a substrate having first and second photodetectors, a first filter layer, and a controller. The photodetectors are sensitive to light in the infrared portion of the optical spectrum as well as to light in the first band of wavelengths, and generate first and second photodetector signals. The first filter layer transmits light in the first band of wavelengths and light in the infrared portion of the optical spectrum while blocking light in a portion of the visible spectrum outside of the first band of wavelengths, without altering light received by the first photodetector. The controller processes the first and second photodetector signals to produce the first output signal that is corrected for infrared in the input light.

摘要翻译： 公开了一种光传感器，其产生指示在第一波长波段中从预定方向接收的光的强度的第一输出信号。 光传感器包括具有第一和第二光电检测器的基板，第一过滤层和控制器。 光电检测器对光谱的红外部分中的光敏感，并且在第一波长波段中发光，并且产生第一和第二光电检测器信号。 第一滤光层在第一波长的波长范围内的光和光在光谱的红外部分中透射，同时阻挡在第一波长段外的可见光谱的一部分中的光，而不改变由第一光电检测器接收的光。 控制器处理第一和第二光电检测器信号以产生在输入光中被校正为红外的第一输出信号。

公开(公告)号：US20080035954A1

公开(公告)日：2008-02-14

申请号：US11889135

申请日：2007-08-09

申请人： Yoshiaki Nozaki

发明人： Yoshiaki Nozaki

IPC分类号： H01L31/0224 ,  H01L21/02

CPC分类号： H01L27/1443 ,  H01L29/2003 ,  H01L29/7787 ,  H01L31/105

摘要： A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.

摘要翻译： 半导体器件包括使用硅衬底形成的光电二极管，在硅衬底上形成的带隙大于硅的宽带隙半导体层，以及使用宽带隙半导体层形成的开关元件。 开关元件电连接到光电二极管，以便通过来自光电二极管的控制信号进行开/关控制。

公开(公告)号：US20070254398A1

公开(公告)日：2007-11-01

申请号：US11528536

申请日：2006-09-28

申请人： Toshihiro Wakabayashi ,  Takao Setoyama ,  Yuji Asano ,  Akio Igarashi

发明人： Toshihiro Wakabayashi ,  Takao Setoyama ,  Yuji Asano ,  Akio Igarashi

IPC分类号： H01L21/425

CPC分类号： H01L21/8249 ,  H01L27/0635 ,  H01L27/1443 ,  H01L31/102 ,  H01L31/18

摘要： A method of manufacturing a high-speed operable and broadband operable semiconductor device where a light-receiving element section, a CMOS element and a bipolar transistor element having a double polysilicon structure are formed on one chip. By performing the same conductivity type ion implantation, the same conductivity type diffusion layers (examples thereof include N-type diffusion layers, an anode diffusion layer, P-type well diffusion layer and collector diffusion layer as P-type diffusion layers, a cathode diffusion layer and collector contact diffusion layer as N-type diffusion layers, a source/drain diffusion layer and base Poly-Si diffusion layer as N-type diffusion layers, and a source/drain diffusion layer and base Poly-Si diffusion layer as P-type diffusion layers) are simultaneously formed in two or more regions among a light-receiving element region, CMOS element region and bipolar transistor element region of a semiconductor substrate or of an epitaxial layer over the semiconductor substrate.

摘要翻译： 一种制造高速可操作和宽带可操作的半导体器件的方法，其中在一个芯片上形成具有双重多晶硅结构的光接收元件部分，CMOS元件和双极晶体管元件。 通过进行相同的导电型离子注入，具有相同的导电型扩散层（其例子包括N型扩散层，阳极扩散层，P型阱扩散层和作为P型扩散层的集电极扩散层，阴极扩散 作为N型扩散层的层和集电极接触扩散层，作为N型扩散层的源极/漏极扩散层和基底多晶硅扩散层，以及作为P-型扩散层的源极/漏极扩散层和基极多晶硅扩散层， 类型扩散层）同时形成在半导体衬底的光接收元件区域，CMOS元件区域和双极晶体管元件区域或半导体衬底上的外延层的两个或更多个区域中。

公开(公告)号：US20070228358A1

公开(公告)日：2007-10-04

申请号：US11549848

申请日：2006-10-16

申请人： Eran Ofek

发明人： Eran Ofek

IPC分类号： H01L31/00 ,  H01L29/06

CPC分类号： H01L27/1443 ,  H01L31/0352 ,  H01L31/107 ,  Y10S977/954

摘要： A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconductor (such as GaAs) isolated from a parallel or adjacent gate electrodes by Nano-scale gap(s). Source and drain electrodes are separated from the photoelectric material by a smaller gap such that photoelectrons created when a photon impinges on the photoelectric material it will release a single electron under a bias (applied between the source and drain to the drain) to the drain electrode, rather than directly to the gate electrode. The drain electrode is connected to the gate electrode by a detection circuit configured to count each photoelectron that flows to the gate electrode.

摘要翻译： 具有单个光子的灵敏度阈值的光子接收器容易地制造在用于紧凑和/或大规模阵列器件的纳米级上。 基本受体元件是直接半导体的量子点，例如在通过纳米尺度间隙从平行或相邻栅极隔离的半导体（例如GaAs）中。 源极和漏极电极与光电材料分开较小的间隙，使得当光子照射在光电材料上时产生光电子，它将在偏置（施加在源极和漏极到漏极之间）之间释放单个电子到漏电极 而不是直接连接到栅电极。 漏电极通过检测电路连接到栅电极，该检测电路被配置为对流向栅电极的每个光电子进行计数。

公开(公告)号：US20070145503A1

公开(公告)日：2007-06-28

申请号：US11707723

申请日：2007-02-16

申请人： Bart Dierickx

发明人： Bart Dierickx

IPC分类号： H01L27/14

CPC分类号： H01L27/14609 ,  H01L27/1443 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14812 ,  H01L31/0352 ,  H04N5/35563

摘要： An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped or inverted region of a first conductivity is provided in or on the substrate for storing the carriers before read-out. At least one non-carrier storing, planar current flow, carrier transport pathway is provided from or through the carrier collecting region to the at least one doped or inverted region to transfer the carriers without intermediate storage to the read-out electronics.

公开(公告)号：US20070116398A1

公开(公告)日：2007-05-24

申请号：US11561474

申请日：2006-11-20

申请人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

发明人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： G02F1/035 ,  G02F1/295

CPC分类号： G02F1/025 ,  G02B2006/12142 ,  G02F2001/0157 ,  G02F2201/04 ,  G02F2201/16 ,  G02F2202/105 ,  H01L27/1443 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/1812 ,  Y02E10/50

摘要： An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.

摘要翻译： 光电子器件包括接收输入光信号的输入波导结构。 GeSi / Si波导结构从输入波导接收输入光信号，并对输入光信号进行选择性光电子操作。 GeSi / Si波导结构输出与在输入光信号上执行的选择性光电子操作相关联的光或电输出信号。 输出波导结构接收来自GeSi / Si波导结构的输出光信号，并提供光输出信号用于进一步处理。

公开(公告)号：US07220959B2

公开(公告)日：2007-05-22

申请号：US10919593

申请日：2004-08-16

申请人： Ken A. Nishimura

发明人： Ken A. Nishimura

IPC分类号： G01J3/50 ,  H01J40/14 ,  H01J5/16 ,  H01L31/00

CPC分类号： H01L27/1443 ,  G01J3/50 ,  G01J2003/466 ,  H01L31/101

摘要： A semiconductor color sensor implemented without the use of color filters. Fabricating photodiodes using different semiconductor materials provide photodiodes with different sensitivities vs. wavelengths. A first embodiment uses photodiodes with different junction depths. A shallow junction depth produces a photodiode with its sensitivity peak in shorter wavelengths, while a deeper junction depth produces a photodiode with its sensitivity peak in longer wavelengths. Amorphous as well as crystalline structures may be used. A second embodiment uses photodiodes with different materials, such as Silicon-Germanium (SiGe) which has a longer wavelength peak sensitivity, and Silicon (Si) which has a shorter wavelength peak sensitivity in comparison. More than two photodiodes having different wavelength sensitivities may be used. Sensing current ratios between pairs of diodes allows color balance to be maintained.

摘要翻译： 实现了不使用滤色器的半导体颜色传感器。 使用不同的半导体材料制造光电二极管提供具有不同灵敏度与波长的光电二极管。 第一实施例使用具有不同结深度的光电二极管。 浅结深产生具有较短波长的灵敏度峰值的光电二极管，而较深的结深度产生具有较长波长的灵敏度峰值的光电二极管。 可以使用非晶态以及晶体结构。 第二实施例使用具有不同材料的光电二极管，例如具有较长波长峰值灵敏度的硅锗（SiGe）和具有较短波长峰值灵敏度的硅（Si）。 可以使用具有不同波长灵敏度的两个以上的光电二极管。 二极管之间的感应电流比可以保持色彩平衡。