公开(公告)号：US20070105251A1

公开(公告)日：2007-05-10

申请号：US11553141

申请日：2006-10-26

申请人： Jifeng Liu ,  Dong Pan ,  Lionel Kimerling ,  Jurgen Michel ,  Sajan Saini

发明人： Jifeng Liu ,  Dong Pan ,  Lionel Kimerling ,  Jurgen Michel ,  Sajan Saini

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01S5/3223 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/18369 ,  H01S5/3086 ,  H01S5/3215 ,  H01S5/3427

摘要： A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

摘要翻译： 激光结构包括具有掺杂Ge的至少一个有源层，以便从Ge的直接带隙产生大约1550nm的光发射。 第一限制结构位于至少一个活性层的顶部区域上。 第二限制结构位于至少一个活性层的底部区域上。

公开(公告)号：US20070025670A1

公开(公告)日：2007-02-01

申请号：US11194805

申请日：2005-08-01

申请人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  John Yasaitis ,  Lionel Kimerling

发明人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  John Yasaitis ,  Lionel Kimerling

IPC分类号： G02B6/10

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/1223 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12169

摘要： A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.

摘要翻译： 提供了形成低损耗晶体质量波导的方法。 该方法包括提供衬底并在衬底上形成电介质层。 通过蚀刻介电层的一部分形成通道。 在限定通道的区域中执行Si Ge或SiGe层的选择性生长。 此外，该方法包括在限定的温度范围内对波导进行热退火。

公开(公告)号：US20070116398A1

公开(公告)日：2007-05-24

申请号：US11561474

申请日：2006-11-20

申请人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

发明人： Dong Pan ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： G02F1/035 ,  G02F1/295

CPC分类号： G02F1/025 ,  G02B2006/12142 ,  G02F2001/0157 ,  G02F2201/04 ,  G02F2201/16 ,  G02F2202/105 ,  H01L27/1443 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/1812 ,  Y02E10/50

摘要： An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.

摘要翻译： 光电子器件包括接收输入光信号的输入波导结构。 GeSi / Si波导结构从输入波导接收输入光信号，并对输入光信号进行选择性光电子操作。 GeSi / Si波导结构输出与在输入光信号上执行的选择性光电子操作相关联的光或电输出信号。 输出波导结构接收来自GeSi / Si波导结构的输出光信号，并提供光输出信号用于进一步处理。

公开(公告)号：US20140254620A1

公开(公告)日：2014-09-11

申请号：US14124004

申请日：2012-03-01

申请人： Jonathan T. Bessette ,  Yan Cai ,  Rodolfo E. Camacho-Aguilera ,  Jifeng Liu ,  Lionel Kimerling ,  Jurgen Michel

发明人： Jonathan T. Bessette ,  Yan Cai ,  Rodolfo E. Camacho-Aguilera ,  Jifeng Liu ,  Lionel Kimerling ,  Jurgen Michel

IPC分类号： H01S5/30 ,  H01S5/227

CPC分类号： H01S5/3027 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/2254 ,  H01L21/26513 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3223

摘要： In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

摘要翻译： 在形成光子器件的方法中，形成第一硅电极，然后在第一硅电极上形成锗活性层，同时在锗层中包含n型掺杂剂原子，在形成层期间产生 背景电子掺杂剂浓度大于锗的固有掺杂浓度。 然后在锗活性层的表面上形成第二硅电极。 所形成的锗活性层掺杂有额外的掺杂剂，用于支持电泵浦引导模式作为具有大于背景掺杂剂浓度的电活化的n型电掺杂剂浓度的激光增益介质，以克服光子器件的电损耗 。

公开(公告)号：US20070286952A1

公开(公告)日：2007-12-13

申请号：US10566686

申请日：2004-07-29

申请人： Jifeng Liu ,  Douglas Cannon ,  Kazumi Wada ,  Samerkhae Jongthammanurak ,  David Danielson ,  Jurgen Michel ,  Lionel Kimerling

发明人： Jifeng Liu ,  Douglas Cannon ,  Kazumi Wada ,  Samerkhae Jongthammanurak ,  David Danielson ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： H01L21/20 ,  C30B25/18

CPC分类号： H01L31/1808 ,  C30B25/18 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02656 ,  H01L31/028 ,  Y02E10/547

摘要： A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.

摘要翻译： SiGe或Ge结构包括衬底和形成在衬底的第一表面上的SiGe或Ge层。 在基板的第二表面上形成硅化物或锗化物层，以增加第一表面上的SiGe或Ge层的拉伸应变。

公开(公告)号：US20070104411A1

公开(公告)日：2007-05-10

申请号：US11269355

申请日：2005-11-08

申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： G02B6/12

CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/4201 ,  G02B2006/12061

摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

公开(公告)号：US20070104410A1

公开(公告)日：2007-05-10

申请号：US11269354

申请日：2005-11-08

申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： G02B6/12

CPC分类号： G02B6/1228 ,  G02B6/12004 ,  G02B6/305 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/105 ,  H01L31/125 ,  Y02E10/547

摘要： High-speed optoetectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

摘要翻译： 具有通常与CMOS处理技术兼容的方法制造具有与光电检测器密集地集成并有效耦合的波导的高速光电检测器件。 在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。

公开(公告)号：US20070104441A1

公开(公告)日：2007-05-10

申请号：US11269907

申请日：2005-11-08

申请人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

发明人： Donghwan Ahn ,  Jifeng Liu ,  Jurgen Michel ,  Lionel Kimerling

IPC分类号： G02B6/10 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02B6/12004 ,  G02B6/4204 ,  G02B2006/12178 ,  H01L31/105

摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

摘要翻译： 具有与CMOS处理技术通用兼容的方法制造具有与光电检测器密集地集成并有效耦合的光波导的高速光电子器件。 在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。

公开(公告)号：US09692209B2

公开(公告)日：2017-06-27

申请号：US14124004

申请日：2012-03-01

申请人： Jonathan T. Bessette ,  Yan Cai ,  Rodolfo E. Camacho-Aguilera ,  Jifeng Liu ,  Lionel Kimerling ,  Jurgen Michel

发明人： Jonathan T. Bessette ,  Yan Cai ,  Rodolfo E. Camacho-Aguilera ,  Jifeng Liu ,  Lionel Kimerling ,  Jurgen Michel

IPC分类号： H01S3/0941 ,  H01S5/30 ,  H01L21/02 ,  H01L21/225 ,  H01L21/265 ,  H01S5/227 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22

CPC分类号： H01S5/3027 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/2254 ,  H01L21/26513 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3223

摘要： In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

公开(公告)号：US07596158B2

公开(公告)日：2009-09-29

申请号：US11553141

申请日：2006-10-26

申请人： Jifeng Liu ,  Dong Pan ,  Lionel C. Kimerling ,  Jurgen Michel ,  Sajan Saini

发明人： Jifeng Liu ,  Dong Pan ,  Lionel C. Kimerling ,  Jurgen Michel ,  Sajan Saini

IPC分类号： H01S5/00

CPC分类号： H01S5/3223 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/18369 ,  H01S5/3086 ,  H01S5/3215 ,  H01S5/3427

摘要： A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

摘要翻译： 激光结构包括具有掺杂Ge的至少一个有源层，以便从Ge的直接带隙产生大约1550nm的光发射。 第一限制结构位于至少一个活性层的顶部区域上。 第二限制结构位于至少一个活性层的底部区域上。