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    DISTILLATION PROCESS WITH A LAVAL NOZZLE
    131.
    发明公开
    DISTILLATION PROCESS WITH A LAVAL NOZZLE 审中-公开

    公开(公告)号：US20240226770A1

    公开(公告)日：2024-07-11

    申请号：US18561836

    申请日：2022-05-16

    Applicant: BASF SE

    Inventor： Bernd METZEN ,  Torsten MATTKE

    IPC: B01D5/00 ,  B01D3/14

    CPC classification number: B01D5/0063 ,  B01D3/14

    Abstract: The invention relates to a process for at least partially separating a light boiling component from a mixture containing said light boiling component and at least a heavy boiling component, the process comprising the steps of (a) feeding the mixture into a distillation column and withdrawing a distillate stream enriched in the light boiling component from the top section of the distillation column and withdrawing a bottom stream enriched in the heavy boiling component from the bottom section of the distillation column: and (b) transferring at least part of the distillate stream as a condensation stream to a condensation device wherein the condensation stream is at least partially condensed and recycled to the top section of the distillation column, wherein the condensation device comprises a pump and a de Laval nozzle having a throat, a converging zone before the throat and a diverging zone after the throat, the condensation stream being passed into the converging zone of the de Laval nozzle, the condensation stream being accelerated to sonic speed while passing the throat, the condensation stream being expanded in the diverging zone to supersonic speed, thereby at least part of the condensation stream being condensed to form a liquid recycle stream, and the recycle stream being recycled through the pump to the top section of the distillation column.

    Process for preparing a sulfur copolymer
    132.
    发明授权
    Process for preparing a sulfur copolymer 有权

    公开(公告)号：US12031030B2

    公开(公告)日：2024-07-09

    申请号：US18552651

    申请日：2022-03-21

    Applicant: BASF SE

    Inventor： Florian Ludwig Geyer ,  Peter Rudolf

    IPC: C08L81/04 ,  C08G75/28

    CPC classification number: C08L81/04 ,  C08G75/28

    Abstract: A process for preparing a sulfur copolymer, a sulfur copolymer, and a polymer composition containing one or more sulfur copolymers are provided. The process involves copolymerizing a cyclic monothiocarbonate compound of formula




    wherein R1 and R2 are independently of one another hydrogen. C1-C18-alkyl, C1-C18-alkyl substituted with halogen or interrupted with O or S; C6-C18-aryl or C6-C12-aryl substituted with C1-C4-alkyl, C1-C4-alkoxy, C1-C4-alkylthio or halogen; with elemental sulfur in the presence of a polymerization initiator.

    Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN
    133.
    发明授权
    Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN 有权

    公开(公告)号：US12024693B2

    公开(公告)日：2024-07-02

    申请号：US17044989

    申请日：2019-03-25

    Applicant: BASF SE

    Inventor： Joannes Theodorus Valentinus Hoogboom ,  Andreas Klipp ,  Jhih Jheng Ke ,  Yi Ping Cheng

    IPC: C09K13/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  G03F7/42

    CPC classification number: C11D7/34 ,  C09K13/00 ,  C11D7/263 ,  C11D7/3281 ,  C11D7/5009 ,  G03F7/426 ,  C11D2111/22

    Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.

    METHOD FOR THE REGENERATION OF SPECIAL FILTER AIDS FOR THE STABILIZATION OF BEVERAGES
    139.
    发明公开
    METHOD FOR THE REGENERATION OF SPECIAL FILTER AIDS FOR THE STABILIZATION OF BEVERAGES 审中-公开

    公开(公告)号：US20240207818A1

    公开(公告)日：2024-06-27

    申请号：US18288047

    申请日：2022-04-22

    Applicant: BASF SE

    Inventor： Joerg KRESS ,  Beatus Daniel SCHEHL

    IPC: B01J20/34 ,  C08F226/10

    CPC classification number: B01J20/3425 ,  B01J20/3475 ,  C08F226/10 ,  B01J2220/4812

    Abstract: The present invention relates to a method for the regeneration of special filter aids, namely, to crosslinked copolymers comprising N-vinylimidazole and N-vinylpyrrolidone as monomeric units, wherein an according copolymer is subsequently i) rinsed with water, ii) brought into contact with an aqueous solution of at least one acid, iii) rinsed with water to neutralize the copolymer, iv) brought into contact with an aqueous solution of at least one base, and v) rinsed with water or an aqueous solution of at least one acid to neutralize the copolymer. The invention also relates to a regenerated copolymer producible by said method and its use as a filter aid for the stabilization of beverages.

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