公开(公告)号：US20250140603A1

公开(公告)日：2025-05-01

申请号：US19010679

申请日：2025-01-06

Applicant: Soitec

Inventor： Marcel Broekaart ,  Arnaud Castex

IPC: H01L21/762

Abstract: A method for fabricating a semiconductor-on-insulator structure involves providing a donor substrate comprising a weakened zone delimiting a layer to be transferred, providing a receiver substrate, and bonding the donor substrate to the receiver substrate. The layer to be transferred is located on the bonding-interface side. A bonding wave is initiated at a first region on the periphery of the interface, and the wave is propagated toward a second region on the periphery of the interface opposite the first region. The difference in speed of propagation of the bonding wave between a central portion of the interface and a peripheral portion of the interface is controlled such that the speed of propagation of the bonding wave is lower in the central portion than in the peripheral portion. The donor substrate is detached along the weakened zone to transfer the layer to be transferred to the receiver substrate.

公开(公告)号：US20250140600A1

公开(公告)日：2025-05-01

申请号：US18834482

申请日：2023-01-30

Applicant: Soitec

Inventor： Carine Duret ,  Ludovic Ecarnot ,  Charlene Porta

IPC: H01L21/762 ,  H10D86/00

Abstract: A method is used to fabricate a double semiconductor-on-insulator structure comprising, from a back side to a front side of the structure: a handle substrate, a first electrically insulating layer, a first single-crystal semiconductor layer, a second electrically insulating layer and a second single-crystal semiconductor layer. The method comprises:—a first step of formation of an oxide layer on the front and back sides of the handle substrate, to form the first electrically insulating layer and an oxide layer on the back side of the handle substrate, —a first step of layer transfer, to transfer the first single-crystal semiconductor layer, —a second step of formation of an oxide layer, to form the second electrically insulating layer, and —a second step of layer transfer, to transfer the second single-crystal semiconductor layer.

公开(公告)号：US12271774B2

公开(公告)日：2025-04-08

申请号：US16980324

申请日：2019-03-14

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Thierry LaRoche

IPC: H03H9/02 ,  G06K19/067 ,  H03H3/08 ,  H03H9/25

Abstract: A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.

公开(公告)号：US12234144B2

公开(公告)日：2025-02-25

申请号：US17637040

申请日：2020-08-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thierry Salvetat ,  Bruno Ghyselen ,  Lamine Benaissa ,  Caroline Coutier ,  Gweltaz Gaudin

IPC: B81C1/00 ,  B81B7/04

Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

公开(公告)号：US20250063784A1

公开(公告)日：2025-02-20

申请号：US18718313

申请日：2022-12-13

Applicant: Soitec

Inventor： Hugo Biard ,  Eric Guiot

IPC: H01L29/16 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor structure, which includes a support substrate of polycrystalline silicon carbide and an active layer of single-crystal silicon carbide, involves: the formation of a support substrate including a stack of a first layer of polycrystalline SiC mainly of polytype 3C and of a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H, the bonding of a donor substrate including an active layer of single-crystal SiC of polytype 4H or 6H to a face of polytype 4H and/or 6H of the support substrate, and the transfer of the active layer onto the support substrate.

公开(公告)号：US20250022748A1

公开(公告)日：2025-01-16

申请号：US18886782

申请日：2024-09-16

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US12198983B2

公开(公告)日：2025-01-14

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US12178133B2

公开(公告)日：2024-12-24

申请号：US18322433

申请日：2023-05-23

Applicant: Soitec

Inventor： Bruno Ghyselen

IPC: H10N30/20 ,  H10N30/01 ,  B06B1/02

Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.

公开(公告)号：US12176244B2

公开(公告)日：2024-12-24

申请号：US17756431

申请日：2020-11-24

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Laurent Viravaux

IPC: H01L21/762 ,  H01L21/67

Abstract: A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.

公开(公告)号：US12165900B2

公开(公告)日：2024-12-10

申请号：US18359807

申请日：2023-07-26

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.