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    Multi-layered bipolar field-effect transistor and method of manufacturing the same
    132.
    发明授权
    Multi-layered bipolar field-effect transistor and method of manufacturing the same 有权
    多层双极场效应晶体管及其制造方法

    公开(公告)号：US07935961B2

    公开(公告)日：2011-05-03

    申请号：US11976090

    申请日：2007-10-19

    Applicant: Sang Yoon Lee ,  Alan J. Heeger ,  Kwang Hee Lee ,  Shinuk Cho

    Inventor： Sang Yoon Lee ,  Alan J. Heeger ,  Kwang Hee Lee ,  Shinuk Cho

    IPC: H01L51/05

    CPC classification number: H01L51/0545 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0047 ,  H01L51/0508 ,  H01L51/0562 ,  H01L51/4226

    Abstract: Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved.

    Abstract translation: 本文公开了一种多层双极场效应晶体管，其包括栅电极，栅极绝缘层，电子传输层，空穴传输层，源电极和漏电极，其中形成中间分离层 在电子传输层和空穴传输层之间，以及其制造方法。 多层双极场效应晶体管的优点在于，由于P沟道和N沟道被有效地分离，所以其电特性如电流ON / OFF比，电子迁移率，空穴迁移率等 ，并且由于可以通过溶液方法制造装置而不损坏层，因此其加工性得到改善。

    Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same
    137.
    发明授权
    Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same 有权
    共聚物，有机绝缘层组合物和使用其制造的有机绝缘层和有机薄膜晶体管

    公开(公告)号：US07675059B2

    公开(公告)日：2010-03-09

    申请号：US11976127

    申请日：2007-10-22

    Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

    Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

    IPC: H01L35/24 ,  H01L51/00

    CPC classification number: C08F212/32 ,  C08F212/14 ,  H01L51/0036 ,  H01L51/052 ,  C08F222/36 ,  C08F2222/404

    Abstract: Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

    Abstract translation: 本文公开了共聚物，其可以包括侧链，其可以降低绝缘层的表面能，从而改善半导体材料的对准，以及包括具有增加的交联度的光反应性官能团的侧链，从而改善 使用其制造的有机薄膜晶体管的特征，包括共聚物的有机绝缘层组合物，有机绝缘层，有机薄膜晶体管，包含该共聚物的有机绝缘层组合物，包含其的电子器件及其制造方法。 根据实施例的共聚物，可以降低绝缘层的表面能，从而可以提高半导体材料的取向，从而提高阈值电压和电荷迁移率并减少驱动时的滞后产生 晶体管。

    Method for forming electrodes of organic electronic devices, organic thin film transistors comprising such electrodes, and display devices comprising such transistors
    138.
    发明授权
    Method for forming electrodes of organic electronic devices, organic thin film transistors comprising such electrodes, and display devices comprising such transistors 有权
    用于形成有机电子器件的电极的方法，包括这种电极的有机薄膜晶体管和包括这种晶体管的显示器件

    公开(公告)号：US07655512B2

    公开(公告)日：2010-02-02

    申请号：US11649806

    申请日：2007-01-05

    Applicant: Bon Won Koo ,  Sang Yoon Lee

    Inventor： Bon Won Koo ,  Sang Yoon Lee

    IPC: H01L21/84

    CPC classification number: H01L51/102 ,  H01L51/0545

    Abstract: Disclosed are methods for forming electrodes for organic electronic devices which allow for the use of an improved range of conductive materials for forming source/drain electrodes. The disclosed methods also allow for the use of different conductive materials for forming data lines and source/drain electrodes during the fabrication of organic electronic devices. Organic electronic devices manufactured according to the methods may provide advantages over conventional methods including, for example, improved patterning and increased accuracy in the formation of electrodes for organic electronic devices. Organic electronic devices fabricated according to the disclosed method are expected to be useful in display devices and electronic displays.

    Abstract translation: 公开了用于形成有机电子器件的电极的方法，其允许使用用于形成源极/漏极的导电材料的改进范围。 所公开的方法还允许在制造有机电子器件期间使用不同的导电材料来形成数据线和源极/漏电极。 根据该方法制造的有机电子器件可以提供优于常规方法的优点，包括例如改进的图案化和增加用于有机电子器件的电极形成的精度。 预期根据所公开的方法制造的有机电子器件在显示装置和电子显示器中是有用的。

    Apparatus for atomic layer deposition and method of atomic layer deposition using the same
    139.
    发明申请
    Apparatus for atomic layer deposition and method of atomic layer deposition using the same 审中-公开
    用于原子层沉积的装置和使用其的原子层沉积的方法

    公开(公告)号：US20090291211A1

    公开(公告)日：2009-11-26

    申请号：US12292595

    申请日：2008-11-21

    Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    IPC: C23C16/54 ,  B05B3/18 ,  B05B1/18

    CPC classification number: C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

    Abstract: Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

    Abstract translation: 示例性实施例提供原子层沉积设备和使用原子层沉积设备沉积原子层的方法。 原子层沉积装置可以包括反应室，安装在反应室中以支撑基板的基板支撑件和设置在基板支撑件上方并具有至少一个同时喷射第一源气体的喷嘴组的喷淋头， 第二源气体和吹扫气体到基板上。 沉积原子层的方法可以包括沿第一方向移动衬底和淋浴头中的至少一个，并且通过注入第一源气体同时在衬底上沉积至少一个第一原子层和至少一个第二原子层， 第二源气体和通过淋浴喷头的净化气体进行移动操作。

    Oxide semiconductor transistor and method of manufacturing the same
    140.
    发明申请
    Oxide semiconductor transistor and method of manufacturing the same 有权
    氧化物半导体晶体管及其制造方法

    公开(公告)号：US20090206332A1

    公开(公告)日：2009-08-20

    申请号：US12320701

    申请日：2009-02-02

    Applicant: Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    Inventor： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    IPC: H01L29/786 ,  H01L21/336

    CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

    Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

    Abstract translation: 氧化物半导体薄膜晶体管（TFT）及其制造方法。 氧化物半导体TFT包括布置在氧化物半导体沟道层和第一栅极之间的第一栅极绝缘层和布置在沟道层和第二栅极之间的第二栅极绝缘层。 第一和第二栅极绝缘层由不同的材料制成并且具有不同的厚度。 优选地，第二栅极绝缘层是氧化硅并且比优选为氮化硅的第一栅极绝缘层更薄。 氧化物半导体是指氧化锌，氧化锡，Ga-In-Zn氧化物，In-Zn氧化物，In-Sn氧化物，氧化锌，氧化锡，Ga-In-Zn氧化物，In- 氧化锌和氧化铟锡。

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