公开(公告)号：US11581183B2

公开(公告)日：2023-02-14

申请号：US17192882

申请日：2021-03-04

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

IPC: H01L21/02 ,  C23C14/02 ,  C23C14/06 ,  H01L21/033 ,  C23C14/35

Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

公开(公告)号：US20220172948A1

公开(公告)日：2022-06-02

申请号：US17672305

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US20210294216A1

公开(公告)日：2021-09-23

申请号：US16825393

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US20210111222A1

公开(公告)日：2021-04-15

申请号：US16653762

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Toshihiko Miyashita ,  Ellie Yieh ,  Srinivas D. Nemani ,  Seshadri Ramaswami ,  Nikolaos Bekiaris

IPC: H01L27/146

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.

公开(公告)号：US20210104434A1

公开(公告)日：2021-04-08

申请号：US16594057

申请日：2019-10-06

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Hao Jiang ,  Mehul Naik ,  Srinivas D. Nemani ,  Ellie Yieh

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  H01L21/3213 ,  C23C14/16 ,  C23C14/58

Abstract: Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

公开(公告)号：US20210104374A1

公开(公告)日：2021-04-08

申请号：US16733299

申请日：2020-01-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Yieh ,  Douglas Buchberger ,  Chentsau Chris Ying

IPC: H01J37/09 ,  H01J37/305 ,  H01J37/20

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

公开(公告)号：US10704141B2

公开(公告)日：2020-07-07

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Qiwei Liang ,  Adib Khan ,  Maximillian Clemons

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/22 ,  C23C16/30 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US10566226B2

公开(公告)日：2020-02-18

申请号：US14933651

申请日：2015-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh ,  Srinivas D. Nemani ,  Arvind Sundarrajan ,  Avinash Avula ,  Ellie Y. Yieh ,  Michael Rice ,  Ginetto Addiego

IPC: B65D85/48 ,  H01L21/673 ,  B25J11/00

Abstract: Embodiments of multi-cassette carrying cases are provided herein. In some embodiments a multi-cassette carrying case includes: a body having an inner volume; a door coupled to the body to selectively seal off the inner volume; and a plurality of cassette holders disposed in the inner volume to hold one or more substrate cassettes. In some embodiments, a method of transferring substrates includes: placing a substrate in a substrate cassette, wherein an inner volume of the substrate cassette is sealed from an environment outside of the substrate cassette; and placing the substrate cassette in a multi-cassette carrying case.

公开(公告)号：US10566188B2

公开(公告)日：2020-02-18

申请号：US16035983

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Maximillian Clemons ,  Michel Ranjit Frei ,  Mahendra Pakala ,  Mehul B. Naik ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/00 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.

公开(公告)号：US20200051920A1

公开(公告)日：2020-02-13

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.