公开(公告)号：US20080311431A1

公开(公告)日：2008-12-18

申请号：US12155924

申请日：2008-06-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/65

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G01S7/032 ,  G01S13/34 ,  G01S2013/936 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/66 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.

摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。

公开(公告)号：US20080204943A1

公开(公告)日：2008-08-28

申请号：US11902657

申请日：2007-09-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85) M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.

摘要翻译： 磁阻元件包括：其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。 第一磁性层和第二磁性层中的至少一个具有由M 1 aM 2 bXc（其中5≤a≤68,10≤b≤73且22 <= c < = 85）M 1是选自Co，Fe和Ni中的至少一种元素。 M 2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

公开(公告)号：US20080008909A1

公开(公告)日：2008-01-10

申请号：US11802474

申请日：2007-05-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33 ,  G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US09007720B2

公开(公告)日：2015-04-14

申请号：US12213417

申请日：2008-06-19

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/127 ,  G11B5/02 ,  B82Y10/00 ,  G11B5/31 ,  G11B5/39 ,  G11B5/66 ,  G11B5/74 ,  G11B5/82 ,  G11B5/00

CPC分类号： G11B5/66 ,  B82Y10/00 ,  G11B5/02 ,  G11B5/314 ,  G11B5/3983 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B2005/0002 ,  G11B2005/0024

摘要： A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.

公开(公告)号：US08792271B2

公开(公告)日：2014-07-29

申请号：US13282605

申请日：2011-10-27

申请人： Hirofumi Morise ,  Hideaki Fukuzawa ,  Akira Kikitsu ,  Yoshiaki Fukuzumi

发明人： Hirofumi Morise ,  Hideaki Fukuzawa ,  Akira Kikitsu ,  Yoshiaki Fukuzumi

IPC分类号： G11C11/15

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  H01F10/3236 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L41/0986 ,  H01L41/12 ,  H01L43/10

摘要： A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.

摘要翻译： 磁存储器件包括第一电极，第二电极，层叠结构，其包括设置在第一电极和第二电极之间的多个第一磁性层，第二磁性层包括与第一磁性层不同的组成元素， 在多个第一磁性层之间，在层压结构中设置在与设置有第一电极的一侧相反的一侧的压电体，以及将第三电极向压电体施加电压，并且设置在与第一电极的位置不同的位置， 电极设置在压电体中。

公开(公告)号：US08379351B2

公开(公告)日：2013-02-19

申请号：US12073895

申请日：2008-03-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。

公开(公告)号：US08351164B2

公开(公告)日：2013-01-08

申请号：US13454846

申请日：2012-04-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39 ,  G11C11/16

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.

摘要翻译： 示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。 第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

公开(公告)号：US08256095B2

公开(公告)日：2012-09-04

申请号：US12871593

申请日：2010-08-30

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/39 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An example method for manufacturing a magneto-resistance effect element includes forming a free magnetization layer and forming a spacer layer. The spacer layer is formed, for example, by forming a non-magnetic first metallic layer and forming a second metallic layer on a surface of the non-magnetic first metallic layer. A first irradiating process includes irradiating, onto the second metallic layer, first ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr, so as to convert the second metallic layer into an insulating layer and to form a non-magnetic metallic path penetrating through the insulating layer and containing elements of the non-magnetic first metallic layer. A second irradiating process includes irradiating second ions or plasma onto the insulating layer. A non-magnetic third metallic layer is formed on the non-magnetic metallic path.

摘要翻译： 用于制造磁阻效应元件的示例性方法包括形成自由磁化层并形成间隔层。 间隔层例如通过形成非磁性第一金属层而在非磁性第一金属层的表面上形成第二金属层而形成。 第一照射方法包括向第二金属层照射包含氧和氮中的至少一种的第一离子或等离子体以及选自Ar，Xe，He，Ne，Kr中的至少一种，以便将 第二金属层形成绝缘层，并且形成穿过绝缘层并且包含非磁性第一金属层的元件的非磁性金属路径。 第二照射工艺包括将第二离子或等离子体照射到绝缘层上。 非磁性金属层形成在非磁性金属路径上。

公开(公告)号：US08213130B1

公开(公告)日：2012-07-03

申请号：US13234356

申请日：2011-09-16

申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3983 ,  G11B2005/3996 ,  G11C11/161

摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.

摘要翻译： 磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。 氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间， 或在第二磁性层内，或在第二磁性层和第二电极之间。 氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。 金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。

公开(公告)号：US08208229B2

公开(公告)日：2012-06-26

申请号：US13243553

申请日：2011-09-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.

摘要翻译： 一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层 层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自 由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。