摘要:
A charged particle beam exposure method is adapted to an exposure apparatus which includes a plurality of exposure systems that simultaneously expose the same pattern. The method includes the steps of (a) generating, by a pattern generating unit in each exposure system, data related to patterns which are to be exposed, (b) deflecting, by a column unit in each exposure system, a charged particle beam onto an object which is mounted on a stage by deflecting the charged particle beam based on the data generated by the pattern generating unit in a corresponding exposure system, and (c) detecting an abnormality in the exposure apparatus during operation of the exposure apparatus based on data which are obtained from corresponding parts of the exposure systems.
摘要:
The invention provides a highly stretchable fabric having an elongation percentage of 5 to 45% and a recovery percentage of elongation of at least 70% and comprising spun yarns serving at least as warps or wefts, the fabric being characterized in that the spun yarns contain two-component composite fibers comprising a highly shrinkable polyester component A and a polyester component B less shrinkable than the polyester component A, the composite fibers being so oriented that in the vicinity 5 of the crests of weaving crimps of the spun yarn, the polyester component A faces toward the inner side of the crimps. The invention also provides a process for producing the fabric. The fabric is excellent in stretchability and recovery from elongation and is capable of retaining its appearance and hand.
摘要:
A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling cheer to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supporting the flow controller partially in the pulling chamber. As a result, a first flow path through which the carrier gas flows toward said bottom gap is defined between the inside of the tubular portion and the pulled monocrystal, a second flow path is defined comprised of a flow path of the carrier gas passing through the top gap and a flow path of the carrier gas passing from the first flow path through the bottom gap and then passing between the surface of the silicon melt and flow controller. The silicon oxide is exhausted together with the carrier gas through the second flow path to the outside of the pulling chamber.
摘要:
A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling chamber to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supporting the flow controller partially in the pulling chamber. As a result, a first flow path through which the carrier gas flows toward said bottom gap is defined between the inside of the tubular portion and the pulled monocrystal, a second flow path is defined comprised of a flow path of the carrier gas passing through the top gap and a flow path of the carrier gas passing from the first flow path through the bottom gap and then passing between the surface of the silicon melt and flow controller. The silicon oxide is exhausted together with the carrier gas through the second flow path to the outside of the pulling chamber.
摘要:
In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.
摘要:
A method for exposing a pattern of a semiconductor device on an object comprises the steps of extracting block exposure data from design data the semiconductor device, extracting variable exposure data from the design data, extracting fine exposure data from the variable exposure data such that the fine exposure data comprises exposure data for fine elemental patterns that have a size smaller than a predetermined threshold size below which exposure by a variable shaped beam is difficult, extracting mask data indicative of a construction of a beam shaping mask used for shaping the beam based upon the block exposure data, variable exposure data and the fine exposure data, such that the mask data includes information about location, size and shape of apertures formed on the beam shaping mask for shaping the beam, fabricating the beam shaping mask based upon the mask data, and exposing the device pattern by selectively passing the beam through one of the block apertures, the variable exposure aperture and the fine aperture based upon block exposure data, the variable exposure data and the fine exposure data.
摘要:
A charged particle beam exposure method deflects a charged particle beam in a deflection system which includes electromagnetic deflection coils and an electromagnetic lens. The charged particle beam exposure method includes controlling the deflection system based on deflection data, and blocking heat radiation from at least the electromagnetic deflection coils by a partition so as to prevent the heat radiation from reaching the electromagnetic lens and to prevent heat conduction to the electromagnetic lens by the partition.
摘要:
A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.
摘要:
A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.
摘要:
A method of manufacturing a steering wheel, in which a coating layer is molded of a synthetic resin, by using a molding die unit, on at least the annular portion of a steering wheel core including a boss. The annular portion is located around the boss and has a groove extending in the circumferential direction thereof. Spokes couple the boss and the annular portion to each other. The method includes a die opening step in which an upper molding die and a lower molding die, which have a gate formed at the separation surfaces of the dies and communicating with the molding cavity of the die unit, are opened from each other. The second step is a core setting step in which the core is set in the cavity so that the outermost part of the groove of the annular portion having walls defining the groove between them is located as the top of the groove, one of the walls, which faces the gate and has a notched part notched to be smaller in height than the other of the walls, faces the gate at the notched part, and the top of the notched part is located below the separation surfaces. Third, a coating layer molding step is carried out in which the dies are closed on each other and the resin is injected into the cavity through the gate so that the coating layer is molded of the resin on the core. Last and a steering wheel takeout step in which the dies are opened from each other and the wheel is taken out from the dies is accomplished.