摘要:
A method of manufacturing a steering wheel, in which a coating layer is molded of a synthetic resin, by using a molding die unit, on at least the annular portion of a steering wheel core including a boss. The annular portion is located around the boss and has a groove extending in the circumferential direction thereof. Spokes couple the boss and the annular portion to each other. The method includes a die opening step in which an upper molding die and a lower molding die, which have a gate formed at the separation surfaces of the dies and communicating with the molding cavity of the die unit, are opened from each other. The second step is a core setting step in which the core is set in the cavity so that the outermost part of the groove of the annular portion having walls defining the groove between them is located as the top of the groove, one of the walls, which faces the gate and has a notched part notched to be smaller in height than the other of the walls, faces the gate at the notched part, and the top of the notched part is located below the separation surfaces. Third, a coating layer molding step is carried out in which the dies are closed on each other and the resin is injected into the cavity through the gate so that the coating layer is molded of the resin on the core. Last and a steering wheel takeout step in which the dies are opened from each other and the wheel is taken out from the dies is accomplished.
摘要:
A steering wheel core is disclosed which comprises a boss, a core piece of a ring part disposed around the boss, and core pieces of spoke parts interconnecting the boss and the core piece of the ring part. The core pieces of the spoke parts are formed by die casting an aluminum alloy containing magnesium, iron, manganese, silicon, and unavoidable impurities. The magnesium content in the aluminum alloy is not less than 1.5% by weight and less than 2.5% by weight.
摘要:
A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.
摘要:
A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.
摘要:
A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要:
An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要:
An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between a base layer and an emitter layer, followed by a flash or laser anneal step to diffuse dopant atoms from the emitter dopant atom layer into the base layer.
摘要:
An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
摘要:
An integrated circuit with gate self-protection comprises a MOS device and a bipolar device, wherein the integrated circuit further comprises a semiconductor layer with electrically active regions in which and on which the MOS device and the bipolar device are formed and electrically inactive regions for isolating the electrically active regions from each other. The MOS device comprises a gate structure and a body contacting structure, wherein the body contacting structure is formed of a base layer deposited in a selected region over an electrically active region of the semiconductor layer, and the body contacting structure is electrically connected with the gate structure. The base layer forming the body contacting structure also forms the base of the bipolar device. The present invention further relates to a method for fabricating such an integrated circuit.
摘要:
A method of producing a grid for a lead-acid battery in accordance with the present invention includes the step of placing lead alloy foil on a base material sheet of a lead-calcium alloy and attaching the lead alloy foil under pressure to the base material sheet. The thickness t of the lead alloy foil, the thickness a of the base material sheet before the attaching, and the thickness b of the composite sheet after the attaching satisfy the relational expression 1.3≦(a+t)/b. The length L of the contact part of rollers with the base material sheet and the lead alloy foil is 10 mm or more.This makes it possible to secure good adhesion of the lead alloy foil to the base material sheet. Also, when this composite sheet is subjected to an expanding process and used as a positive electrode grid, it is possible to provide a lead-acid battery having excellent cycle life characteristics.