Dye-forming coupler, silver halide photographic light-sensitive material, and azomethine dye compound
    132.
    发明授权
    Dye-forming coupler, silver halide photographic light-sensitive material, and azomethine dye compound 有权
    染料成色剂,卤化银照相感光材料和偶氮甲碱染料化合物

    公开(公告)号:US07365199B2

    公开(公告)日:2008-04-29

    申请号:US10125548

    申请日:2002-04-19

    CPC classification number: C07D403/06 C07D239/94 G03C7/30535 G03C7/36

    Abstract: A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye compound derived from the coupler: wherein Q is a residue that forms, together with the —N—C═N— moiety, a nitrogen-containing 6-membered ring; RA is a certain alkyl group having at least 7 carbon atoms, or -L-R1; X is an aryl group; Y is a hydrogen atom, or a group capable of being split-off upon a coupling reaction; wherein, when RA is -L-R1, L is a divalent linking group, and R1 is a substituent; and -L-R1 does not represent an alkyl, alkenyl, alkynyl, or aryl group, and -L-R1 does not represent a heterocyclic group that bonds, with a carbon atom therein, to the nitrogen atom of the nitrogen-containing 6-membered ring formed by Q and the —N—C═N— moiety.

    Abstract translation: 式(I)的染料成色剂,含有偶合剂的卤化银摄影感光材料和衍生自成色剂的偶氮甲碱染料化合物:其中Q是与-NCN-部分一起形成的残基, 含氮6元环; R A A是具有至少7个碳原子的某一个烷基,或者是-L-R 1; X是芳基; Y是氢原子,或在偶合反应时能够分离的基团; 其中当R A A为-L-R 1时,L为二价连接基团,R 1为取代基; 并且-LR 1不表示烷基,烯基,炔基或芳基,并且-LR 1不表示与其中的碳原子键合的杂环基团 到由Q和-NCN-部分形成的含氮6元环的氮原子。

    Semiconductor Device and Method for Production Thereof
    134.
    发明申请
    Semiconductor Device and Method for Production Thereof 失效
    半导体器件及其制造方法

    公开(公告)号:US20080029821A1

    公开(公告)日:2008-02-07

    申请号:US11632352

    申请日:2005-07-04

    Abstract: The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a part of the semiconductor substrate, and an insulating film on the shallow substrate flat surface; and the protrusive semiconductor layer of the Fin type FET is formed of a portion protruding from the insulating film of the semiconductor raised portion.

    Abstract translation: 本发明涉及一种半导体器件,其包括具有从衬底平面突出的突出半导体层的鳍型场效应晶体管(FET),形成为跨越突出半导体层的栅极电极,栅极电极 所述突出半导体层以及设置在所述突出半导体层中的源极和漏极区域,其中所述半导体器件在半导体衬底上具有具有鳍型FET的元件形成区域,设置在所述半导体衬底上的沟槽,用于将所述元件形成区域 来自另一个元件形成区域,以及沟槽中的元件隔离绝缘膜; 元件形成区域具有通过挖掘到比沟槽的底表面浅的深度而比半导体衬底的上表面更深的深浅的衬底平坦表面,从衬底平坦表面突出并形成的半导体凸起部分 的半导体衬底,以及在浅衬底平面上的绝缘膜; 并且鳍式FET的突出半导体层由从半导体凸起部分的绝缘膜突出的部分形成。

    Azo dye compound
    138.
    发明授权
    Azo dye compound 有权
    偶氮染料化合物

    公开(公告)号:US07220857B2

    公开(公告)日:2007-05-22

    申请号:US11280345

    申请日:2005-11-17

    Abstract: A compound represented by formula (I):Formula (I) wherein Z1 and Z2 each are atoms necessary for forming an aromatic ring; V1 and V2 each are a substituent W1 or W2; when at least one V1 is W1, at least one V2 is W2, or when at least one V1 is W2, at least one V2 is W1; r is 1 to 4; s is 1 to 4; M1 is a counter ion; m1 is the number necessary for neutralizing charge; W1 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; W2 is a nitro, cyano, alkoxycarbonyl, aryloxycarbonyl, alkyl- or aryl-sulfonyl, carbamoyl, sulfamoyl, alkenyl, alkynyl, aryl, heterocyclic, sulfo, carboxyl, heterocyclic oxy, ammonio, alkyl- or aryl-sulfinyl, alkyl- or aryl-sulfonyl, acyl, or aryl- or heterocyclic-azo group; and the aromatic ring may have a substituent other than V1 and V2.

    Abstract translation: 式(I)表示的化合物:式(I)其中Z 1和Z 2各自为形成芳环所必需的原子; V 1和V 2各自为取代基W 1或W 2; 当至少一个V 1是W 1时,至少一个V 2是W 2 2,或者当在 至少一个V 1是W 2,至少一个V 2是W 1; r为1〜4; s是1到4; M 1是抗衡离子; m 1 是中和电荷所需的数量; W 1是羟基,伯或仲或叔氨基,酰氨基或亚磺酰氨基; W 2是硝基,氰基,烷氧基羰基,芳氧基羰基,烷基 - 或芳基 - 磺酰基,氨基甲酰基,氨磺酰基,烯基,炔基,芳基,杂环,磺基,羧基,杂环氧基,氨基,烷基 - 或 芳基 - 亚磺酰基,烷基 - 或芳基 - 磺酰基,酰基或芳基 - 或杂环 - 偶氮基; 芳环可以具有除V 1和V 2以外的取代基。

    Novel azo dye compound
    140.
    发明申请
    Novel azo dye compound 有权
    新型偶氮染料化合物

    公开(公告)号:US20060111568A1

    公开(公告)日:2006-05-25

    申请号:US11280399

    申请日:2005-11-17

    CPC classification number: C07D487/04

    Abstract: A compound represented by formula (I): Formula (I) wherein Z1 is atoms necessary for forming an aromatic ring; Z2 is atoms necessary for forming an aromatic hetero ring; V1 and V2 each are a substituent, and at least one of V1 and V2 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; r is 1 to 4; s is 1 to 4; the ring formed by Z1 or Z2 may have a substituent other than V1 or V2; M1 is a counter ion; m1 is the number necessary for neutralizing charge; and X1 and X2 each are a carbon or hetero atom, and at least one of X1 and X2 is a hetero atom.

    Abstract translation: 由式(I)表示的化合物:式(I)其中Z 1是形成芳环所必需的原子; Z 2是形成芳族杂环所必需的原子; V 1和V 2各自为取代基,V 1和V 2 2中的至少一个为 羟基,伯或仲 - 或叔 - 氨基,酰氨基或亚磺酰氨基; r为1〜4; s是1到4; 由Z 1或Z 2形成的环可以具有除V 1或V 2以外的取代基; M 1是抗衡离子; m 1 是中和电荷所需的数量; X 1和X 2各自为碳或杂原子,X 1和X 2 2中的至少一个为碳原子或杂原子, SUB>是杂原子。

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