公开(公告)号：US20080186702A1

公开(公告)日：2008-08-07

申请号：US12099021

申请日：2008-04-07

申请人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

发明人： Michael D. Camras ,  William R. Imler ,  Franklin J. Wall ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy ,  Robertus G. Alferink

IPC分类号： F21V9/10

CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The phosphor converted LEDs may also be combined in an array with color LEDs. The color LEDs may be controlled to vary their brightness such that light with an approximately continuous broad spectrum is produced. By controlling the brightness of the color LEDs, light can be produced with a fixed brightness over a large range of white points with a high color rendering quality.

摘要翻译： 设备具有产生广谱光的多个磷光体转换发光器件（LED）的阵列。 磷光体转换的LED可以产生具有不同相关色温（CCT）的光，并且被有助于混合来自LED的光以产生期望的相关色温的光学元件覆盖。 磷光体转换的LED也可以与阵列中的彩色LED组合。 可以控制彩色LED以改变其亮度，使得产生具有近似连续的广谱的光。 通过控制彩色LED的亮度，可以在具有高显色质量的大范围白点上以固定的亮度产生光。

公开(公告)号：US06946309B2

公开(公告)日：2005-09-20

申请号：US10867936

申请日：2004-06-14

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

公开(公告)号：US06683327B2

公开(公告)日：2004-01-27

申请号：US09993862

申请日：2001-11-13

申请人： Michael R. Krames ,  Tetsuya Takeuchi ,  Junko Kobayashi

发明人： Michael R. Krames ,  Tetsuya Takeuchi ,  Junko Kobayashi

IPC分类号： H01L29227

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0075

摘要： A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900° and 1200° C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm−3 and about 5e19 cm−3.

摘要翻译： 公开了一种包含含有铝的成核层的发光器件。 选择成核层的厚度和铝组成以匹配衬底和器件层的折射率，使得入射到成核层的器件层的90％的光被提取到衬底中。 在一些实施方案中，成核层是AlGaN，其厚度为约1000至约1200埃，铝组合物为约2％至约8％。 在一些实施方案中，成核层形成在纤维素基质的与基底的c面杂交的表面上。 在一些实施方案中，成核层在高温下形成，例如在900℃至1200℃之间。在一些实施方案中，成核层掺杂Si至约3埃18厘米-3至约5埃19厘米3的浓度， -3>。