公开(公告)号：US06946309B2

公开(公告)日：2005-09-20

申请号：US10867936

申请日：2004-06-14

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

公开(公告)号：US06784463B2

公开(公告)日：2004-08-31

申请号：US10095552

申请日：2002-03-11

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

公开(公告)号：US07009213B2

公开(公告)日：2006-03-07

申请号：US10633054

申请日：2003-07-31

申请人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

发明人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/44 ,  H01L33/505 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.

摘要翻译： 一种器件包括结合到光学元件的发光半导体器件。 在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。 在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。 光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。 在一些实施方案中，该键基本上不含有机基粘合剂。

公开(公告)号：US07276737B2

公开(公告)日：2007-10-02

申请号：US11328964

申请日：2006-01-09

申请人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

发明人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/44 ,  H01L33/505 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.

摘要翻译： 一种器件包括结合到光学元件的发光半导体器件。 在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。 在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。 光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。 在一些实施方案中，该键基本上不含有机基粘合剂。

公开(公告)号：US06280523B1

公开(公告)日：2001-08-28

申请号：US09245448

申请日：1999-02-05

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

IPC分类号： C30B2512

CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/32341 ,  Y10S117/915

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06307218B1

公开(公告)日：2001-10-23

申请号：US09196928

申请日：1998-11-20

申请人： Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

发明人： Daniel A. Steigerwald ,  Serge L Rudaz ,  Kyle J. Thomas ,  Steven D. Lester ,  Paul S. Martin ,  William R. Imler ,  Robert M. Fletcher ,  Fred A. Kish, Jr. ,  Steven A. Maranowski

IPC分类号： H01L3300

CPC分类号： H01L33/38 ,  H01L33/20

摘要： A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.

摘要翻译： 发光器件包括具有p型层和n型层的异质结。 n电极与n型层电连接，而p电极与p型层电连接。 p和n电极被定位成形成具有均匀光强度的区域。

公开(公告)号：US07488621B2

公开(公告)日：2009-02-10

申请号：US11421350

申请日：2006-05-31

申请人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L21/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US07256483B2

公开(公告)日：2007-08-14

申请号：US10977294

申请日：2004-10-28

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L23/495

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US20110084301A1

公开(公告)日：2011-04-14

申请号：US12969709

申请日：2010-12-16

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/48 ,  H01L33/36

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US08455913B2

公开(公告)日：2013-06-04

申请号：US12969709

申请日：2010-12-16

申请人： John Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.