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131.发明申请公开(公告)号：US20140091303A1
公开(公告)日：2014-04-03
申请号：US14097749
申请日：2013-12-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Tatsuya TAKAHASHI
IPC: H01L27/12
CPC classification number: H01L27/3262 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/32 , H01L27/3248 , H01L29/45
Abstract: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.
Abstract translation: 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。
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公开(公告)号：US20140073086A1
公开(公告)日：2014-03-13
申请号：US14083485
申请日：2013-11-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Miyuki HOSOBA , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC: H01L21/02
CPC classification number: H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
Abstract: An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
Abstract translation: 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。
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公开(公告)号：US20140073085A1
公开(公告)日：2014-03-13
申请号：US14082505
申请日：2013-11-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
CPC classification number: H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。
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公开(公告)号：US20140011327A1
公开(公告)日：2014-01-09
申请号：US13967605
申请日：2013-08-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC: H01L29/66
CPC classification number: H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
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公开(公告)号：US20130306947A1
公开(公告)日：2013-11-21
申请号：US13950404
申请日：2013-07-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC: H01L51/52 , H01L29/786
CPC classification number: H01L29/78696 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/52 , H01L2227/323
Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
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Patent Agency Ranking
公开(公告)号：US20130214307A1
公开(公告)日：2013-08-22
申请号：US13852015
申请日：2013-03-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi SEO , Daisuke KUMAKI , Hisao IKEDA , Junichiro SAKATA
IPC: H01L27/15
CPC classification number: H01L27/156 , H01L27/322 , H01L27/3244 , H01L51/0059 , H01L51/0071 , H01L51/0081 , H01L51/5088 , H01L2251/5315 , H01L2251/558
Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
Abstract translation: 发光元件具有由于发光元件内的散射光或反射光而导致其光提取效率低的问题。 需要通过新的方法来增强发光元件的光提取效率。 根据本发明，发光元件包括第一层产生孔，包括用于每种发射颜色的发光层的第二层和在阳极和阴极之间产生电子的第三层，以及第一层 层根据每个发射颜色的包含发光层的各层而不同。 使用其中混合有机化合物和金属氧化物的层作为第一层，因此即使当厚度增加时驱动电压也不会增加，这是优选的。
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公开(公告)号：US20130157411A1
公开(公告)日：2013-06-20
申请号：US13767335
申请日：2013-02-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. Ltd
Inventor： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC: H01L29/66
CPC classification number: H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
Abstract translation: 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。
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公开(公告)号：US20130149813A1
公开(公告)日：2013-06-13
申请号：US13758141
申请日：2013-02-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC: H01L29/66
CPC classification number: H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
Abstract: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
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公开(公告)号：US20130146869A1
公开(公告)日：2013-06-13
申请号：US13755317
申请日：2013-01-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junichiro SAKATA
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L27/1225
Abstract: It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer.
Abstract translation: 在氧化物半导体层用作沟道层的晶体管中，目的是减小晶体管之间的特性变化并降低氧化物半导体层与源电极层和漏电极层之间的接触电阻。 在其中使用氧化物半导体作为沟道层的晶体管中，至少一个非晶结构包括在要形成沟道的源电极层和漏电极层之间的氧化物半导体层的区域中，以及 晶体结构包括在电连接到诸如源极电极层和漏极电极层的外部的氧化物半导体层的区域中。
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公开(公告)号：US20250160003A1
公开(公告)日：2025-05-15
申请号：US19019827
申请日：2025-01-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari SASAKI , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
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