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301 条记录 (耗时 0.033 秒)

    Clamping mechanism for semiconductor device
    131.
    发明授权
    Clamping mechanism for semiconductor device 有权
    半导体器件夹紧机构

    公开(公告)号：US08118940B2

    公开(公告)日：2012-02-21

    申请号：US12027767

    申请日：2008-02-07

    申请人： Akira Shimizu ,  Akira Watanabe

    发明人： Akira Shimizu ,  Akira Watanabe

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/45544 ,  C23C16/4585 ,  H01L21/68721

    摘要： A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate.

    摘要翻译： 一种用于半导体衬底的夹持机构包括：C形拾取板; 感受器顶板，其具有适于在其上容纳和支撑C形拾取板的内周部分的周边; 以及夹具，其包括（i）顶环部分，用于通过将所述基板的周边夹在所述顶环部分和所述基座顶板之间来夹持所述基板，以及（ii）拾取板支撑部分，其适于支撑所述基板的外周部分 C形拾取板，其中C形拾取板可在顶环部分和拾取板支撑部分之间移动，并且夹具可与C形拾取板和基座顶板一起向上移动。

    CYLINDER BLOCK AND THERMALLY SPRAYED COATING FORMING METHOD
    132.
    发明申请
    CYLINDER BLOCK AND THERMALLY SPRAYED COATING FORMING METHOD 有权
    气缸盖和热喷涂涂层成型方法

    公开(公告)号：US20110297118A1

    公开(公告)日：2011-12-08

    申请号：US13201741

    申请日：2010-02-19

    申请人： Yoshinori Izawa ,  Akira Shimizu

    发明人： Yoshinori Izawa ,  Akira Shimizu

    IPC分类号： F02F1/24 ,  B05D7/22

    CPC分类号： C23C4/06 ,  C23C4/12

    摘要： A cylinder block is provided with a cylinder bore and a thermally sprayed metallic coating disposed on an internal wall of the cylinder bore. The internal wall has first and second wall sections that are located at different axial locations along the internal wall of the cylinder bore. The thermally sprayed metallic coating is disposed on the internal wall of the cylinder bore by spraying droplets of a molten metal. The thermally sprayed metallic coating includes a first thermally sprayed coating portion having a first iron oxide concentration and a second thermally sprayed coating portion having a second iron oxide concentration. The first thermally sprayed coating portion is disposed on the first wall section. The second thermally sprayed coating portion is disposed on the second wall section. The second iron oxide concentration is different from the first iron oxide concentration.

    摘要翻译： 气缸体设置有气缸孔和设置在气缸孔的内壁上的喷镀金属涂层。 内壁具有位于气缸孔内壁不同轴向位置的第一和第二壁段。 喷涂的金属涂层通过喷射熔融金属的液滴而设置在气缸孔的内壁上。 喷镀金属涂层包括具有第一氧化铁浓度的第一热喷涂涂层部分和具有第二氧化铁浓度的第二热喷涂涂层部分。 第一热喷涂层部分设置在第一壁部分上。 第二热喷涂层部分设置在第二壁部分上。 第二氧化铁浓度与第一氧化铁浓度不同。

    Method of forming conformal dielectric film having Si-N bonds by PECVD
    133.
    发明授权
    Method of forming conformal dielectric film having Si-N bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形电介质膜的方法

    公开(公告)号：US07972980B2

    公开(公告)日：2011-07-05

    申请号：US12778808

    申请日：2010-05-12

    申请人： Woo Jin Lee ,  Akira Shimizu

    发明人： Woo Jin Lee ,  Akira Shimizu

    IPC分类号： H01L21/469

    CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中，其中等离子体被激发，由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

    Method of forming conformal dielectric film having Si-N bonds by PECVD
    135.
    发明授权
    Method of forming conformal dielectric film having Si-N bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形电介质膜的方法

    公开(公告)号：US07919416B2

    公开(公告)日：2011-04-05

    申请号：US12357174

    申请日：2009-01-21

    申请人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

    发明人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

    IPC分类号： H01L21/337

    CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

    Protection circuit, and semiconductor device and light emitting device using such protection circuit
    138.
    发明授权
    Protection circuit, and semiconductor device and light emitting device using such protection circuit 失效
    保护电路，半导体器件和使用这种保护电路的发光器件

    公开(公告)号：US07889467B2

    公开(公告)日：2011-02-15

    申请号：US11915921

    申请日：2006-05-29

    申请人： Mitsuru Okazaki ,  Naoki Takahashi ,  Akira Shimizu ,  Kenichi Nakata

    发明人： Mitsuru Okazaki ,  Naoki Takahashi ,  Akira Shimizu ,  Kenichi Nakata

    IPC分类号： H02H9/00

    CPC分类号： H05B33/0884 ,  H01L27/0248 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/30107 ,  Y02B20/341 ,  H01L2924/00

    摘要： In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector.

    摘要翻译： 在通过包括电感分量的线路连接到保护电路的保护电路中，第一晶体管被布置在从保护电路和线路的连接点到达的路径上。 第二晶体管被布置在从被保护电路的连接点到线路的路径上，并从连接点提取与流过第一晶体管的电流相对应的电流。 第一和第二晶体管是具有基极和发射极共同连接的NPN双极晶体管。 电阻器连接在第一晶体管的基极和发射极之间，二极管连接在基极和集电极之间。