公开(公告)号：US20080090307A1

公开(公告)日：2008-04-17

申请号：US11528877

申请日：2006-09-28

申请人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

发明人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.

摘要翻译： 通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。 钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。 通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。 因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

公开(公告)号：US07280389B2

公开(公告)日：2007-10-09

申请号：US11350119

申请日：2006-02-08

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08

摘要： A toggle MTJ cell is disclosed that has a nearly balanced SAF free layer with two major sub-layers separated by an anti-parallel coupling layer. Within each major sub-layer, there is a plurality of minor sub-layers wherein adjacent minor sub-layers are separated by a parallel coupling layer. The parallel coupling layer is a non-magnetic layer that may be a one or more of Ta, Cu, Cr, Ru, Os, Re, Rh, Nb, Mo, W, Ir, and V, a metal oxide, or dusting of NiCr, Ta, Cu, or NiFeCr. Magnetic moments of major sub-layers are made to be nearly equal so that the net moment of the SAF free layer is essentially zero. The MTJ cell and SAF free layer preferably have an aspect ratio of from 1 to 5. Ferromagnetic coupling between minor sub-layers enables a lower write current and lower power consumption than conventional toggle cell designs.

摘要翻译： 公开了具有几乎平衡的SAF自由层的切换MTJ电池，其中两个主要子层由反平行耦合层隔开。 在每个主要子层内，存在多个次要的子层，其中相邻的次要子层被平行耦合层隔开。 平行耦合层是可以是Ta，Cu，Cr，Ru，Os，Re，Rh，Nb，Mo，W，Ir和V中的一种或多种的非磁性层，金属氧化物或粉尘 NiCr，Ta，Cu或NiFeCr。 使主要子层的磁矩几乎相等，使得SAF自由层的净力矩基本为零。 MTJ电池和SAF自由层优选具有1至5的纵横比。次级子层之间的铁磁耦合使得能够比常规触发电池设计更低的写入电流和更低的功率消耗。

公开(公告)号：US20070177420A1

公开(公告)日：2007-08-02

申请号：US11340989

申请日：2006-01-27

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

摘要： A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2 for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at

摘要翻译： 公开了一种切换MTJ，其具有具有两个或更多个具有相同磁矩但具有不同各向异性的两个或更多个磁性子层的SAF自由层，其通过选择Ni-0.8No 0.2〜 对于较高的各向异性子层，具有10〜30Oe的单轴各向异性的一个子层和CoFeB等。 当从容易轴以<10°角施加场时，两个子层的磁矢量与容易轴旋转以形成不同的角度。 还描述了一种用于选择性地写入沿着与位线段正交的字线的位的方法，并且避免了“首先读取”的需要。 在没有位线脉冲的情况下，施加具有由无脉冲间隔分开的两个相反脉冲的双极字线脉冲，以写入“0”。 与第二字线脉冲相反的位线脉冲写入“1”。

公开(公告)号：US20070148786A1

公开(公告)日：2007-06-28

申请号：US11317388

申请日：2005-12-22

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/5853 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307

摘要： An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide through normal oxidation. Optionally, there may also be a thin layer of magnesium on the two magnesium oxide layers.

摘要翻译： 形成用于MTJ装置的改进的隧道势垒层。 这通过在两个步骤中形成隧道势垒层来实现。 首先，通过DC溅射沉积一层镁，并通过自由基氧化转化为氧化镁。 之后是第二个较薄的镁层，通过正常氧化将其转化为氧化镁。 任选地，在两个氧化镁层上也可以有一薄层的镁。

公开(公告)号：US20070140033A1

公开(公告)日：2007-06-21

申请号：US11313019

申请日：2005-12-20

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/06

CPC分类号： G11C29/02 ,  G11C7/20 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and writing during normal operation. A second part of the array comprises the memory cells that can be read only during a power up initialization. The second part of the array is used to store configuration data for altering the physical operation of the memory array. Programmable current sources and timing delays use the stored configuration data to optimize device performance. A redundant section of memory cells is activated by the configuration data.

摘要翻译： 实现了可配置的MRAM设备。 该装置包括磁存储单元的存储器阵列。 该阵列的第一部分包括可在正常操作期间被读取和写入的存储器单元。 阵列的第二部分包括只能在上电初始化期间读取的存储器单元。 数组的第二部分用于存储用于更改存储器阵列的物理操作的配置数据。 可编程电流源和定时延迟使用存储的配置数据来优化设备性能。 存储器单元的冗余部分由配置数据激活。

公开(公告)号：US20070097734A1

公开(公告)日：2007-05-03

申请号：US11264587

申请日：2005-11-01

申请人： Tai Min ,  Po-Kang Wang

发明人： Tai Min ,  Po-Kang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.

摘要翻译： 存储元件使用传统的MTJ进行读取，另外一个单独的磁性参考堆栈在信息被写入时被短暂加热。 然后将该信息静磁施加在位于附近的MTJ自由层上。 以这种方式，MTJ可以针对最大dr / r进行优化，而参考堆可以优化以获得最佳稳定性，因为没有半选择问题。 还描述了用于制造存储元件的工艺。

公开(公告)号：US20070045758A1

公开(公告)日：2007-03-01

申请号：US11215276

申请日：2005-08-30

申请人： Wei Cao ,  Chyu-Jiuh Torng ,  Cheng Horng ,  Ruying Tong ,  Chen-Jung Chien ,  Liubo Hong

发明人： Wei Cao ,  Chyu-Jiuh Torng ,  Cheng Horng ,  Ruying Tong ,  Chen-Jung Chien ,  Liubo Hong

IPC分类号： H01L43/00

CPC分类号： H01L43/12 ,  H01L27/228

摘要： A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.

公开(公告)号：US20070014146A1

公开(公告)日：2007-01-18

申请号：US11179251

申请日：2005-07-12

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOx seed layer, and ML is a composite with a soft magnetic layer comprised of discontinuous particles less than 2 nm in size on the seed layer and a capping layer of Ru, Ta, or Cu on the soft magnetic layer. Fringing fields and hysteresis effects from continuous ferromagnetic cladding layers associated with switching the magnetic state of an adjacent MTJ are totally eliminated because of the super-paramagnetic character of the soft magnetic layer at room temperature. The soft magnetic layer has near zero magnetostriction, very high susceptibility, and may be made of Ni˜80Fe˜20, Ni˜30Fe˜70, Co˜90Fe˜10, or CoNiFe.

公开(公告)号：US20140099735A1

公开(公告)日：2014-04-10

申请号：US14098604

申请日：2013-12-06

申请人： MagIC Technologies, Inc.

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC分类号： H01L43/12 ,  B82Y25/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

摘要翻译： 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

公开(公告)号：US20140017820A1

公开(公告)日：2014-01-16

申请号：US14032599

申请日：2013-09-20

申请人： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

发明人： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC分类号： H01L43/12

CPC分类号： H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

摘要翻译： 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄籽晶层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。