Abstract:
A planar imaging sensor is provided. The planar imaging sensor includes a plurality of photo detectors divided into at least a first group of photo detectors and a second group of photo detectors, the first group of photo detectors having a first detection window and the second group of photo detectors having a second detection window, wherein the second detection window is configured to start later in time than the first detection window.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.
Abstract:
A detecting system for detecting an under-test light of an under-test object includes a light spatial distribution unit, a chromatic-dispersion light-splitting unit and a detecting unit. The light spatial distribution unit is disposed on a side of the under-test object to receive the under-test light and form a plurality of point light sources. The chromatic-dispersion light-splitting unit is disposed on a side of the light spatial distribution unit to receive the point light sources and produce a light-splitting signal. The detecting unit is disposed on a side of the chromatic-dispersion light-splitting unit to receive the light-splitting signal and produce an optical field distribution of the under-test light.
Abstract:
A readout device includes a plurality of detecting circuits arranged in rows and columns to form a detecting array, and an output module. Each of the detecting circuits includes two transistors for generating a detection signal associated with impedance at a target site. Through selection of the rows and the columns of the detecting circuits, the output module outputs an output voltage signal having a magnitude positively correlated with magnitude of a selected one of the detection signals received from the detecting circuits.
Abstract:
The present invention provides a light-driven retina chip capable of receiving a signal light and a background light, including: an array of photodiodes and a plurality of background light eliminating units. The array of photodiodes includes a plurality of photodiodes and a plurality of current amplifying circuits. The signal light is converted into an electric signal and the background light is converted into a plurality of background light currents. The photodiodes are correspondingly connected to the current amplifying circuits. The background light eliminating unit includes a plurality of background light sensing circuits and a plurality of current eliminating circuits. The current eliminating circuits are respectively and electrically connected to the photodiodes of the array of photodiodes. The background light currents generated by the photodiodes from the background light are eliminated by the background light eliminating units, thereby enhancing a dynamic range of the light-driven retina chip.
Abstract:
A light distribution characteristic measurement apparatus includes an imaging unit disposed at a predetermined distance from a light source, a movement mechanism that successively changes a positional relation of the imaging unit with respect to the light source, while keeping the distance between the light source and the imaging unit, and a processing module that calculates the light distribution characteristic of the light source. The processing module obtains a plurality of image data taken under a first imaging condition and a plurality of image data taken under a second imaging condition different from the first condition, and determines corrected image information corresponding to a relative position of interest, from first image information corresponding to the relative position of interest included in the image data taken under the first condition and second image information corresponding to the relative position of interest included in the image data taken under the second condition.
Abstract:
An array of photodetector is organized along a first organizational axis on a semiconductor substrate of a first conductivity type. Each photodetector is at least partially formed in the substrate which forms a first electrode of the photodetector. A peripheral polarization ring is formed around the array of photodetectors. The polarization ring is connected to a polarization voltage generator and to the substrate. A read circuit is connected to a photodetector via the second terminal of the photodetector. A first switch connects the photodetector to a generator of an additional voltage. A second switch connects the photodetector to the associated read circuit. The first and the second switches are in opposite states.
Abstract:
There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.
Abstract:
An array of photodetector is organized along a first organizational axis on a semiconductor substrate of a first conductivity type. Each photodetector is at least partially formed in the substrate which forms a first electrode of the photodetector. A peripheral polarization ring is formed around the array of photodetectors. The polarization ring is connected to a polarization voltage generator and to the substrate. A read circuit is connected to a photodetector via the second terminal of the photodetector. A first switch connects the photodetector to a generator of an additional voltage. A second switch connects the photodetector to the associated read circuit. The first and the second switches are in opposite states.
Abstract:
An opto-electronic integrated circuit includes an optical splitter (12, 13A, 13B) formed on a substrate, the optical splitter branching an input optical signal into N (N is an integer of 2 or more) optical signals, and outputting the optical signals, and N optical phase modulators (15A-15D) formed on the substrate for the respective optical signals output from the optical splitter, the optical phase modulators adjusting the phases of the optical signals based on a phase modulation characteristic in which the phase change amount changes depending on the wavelength of light, and output the optical signals.