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507 条记录 (耗时 0.016 秒)

    Field emission type display device and method for driving same
    131.
    发明授权
    Field emission type display device and method for driving same 失效
    场发射型显示装置及其驱动方法

    公开(公告)号：US5834900A

    公开(公告)日：1998-11-10

    申请号：US834177

    申请日：1997-04-15

    申请人： Mitsuru Tanaka ,  Kazuyuki Suzuki

    发明人： Mitsuru Tanaka ,  Kazuyuki Suzuki

    IPC分类号： G09G3/22 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  G09G3/10

    CPC分类号： G09G3/22 ,  H01J1/3042 ,  G09G2320/029 ,  G09G2320/04 ,  G09G2320/041 ,  H01J2201/319

    摘要： A field emission type display device capable of preventing a variation in luminance of the display device due to a variation in ambient temperature. A resistive layer is formed on cathode electrodes arranged in a display region and conical emitters are arranged on the resistive layer. The resistive layer is made of a semiconductor material, resulting in being varied in resistance depending on a temperature. A monitor resistive pattern made of the same material as the resistive layer is arranged so as to measure the resistance variation in the form of a voltage variation through an OP amplifier 11, which is then fed to the control circuit. The control circuit controls a gate voltage depending on the resistance to prevent a variation in luminance of the display device.

    摘要翻译： 一种能够防止由于环境温度变化引起的显示装置的亮度变化的场发射型显示装置。 电阻层形成在布置在显示区域中的阴极上，锥形发射体布置在电阻层上。 电阻层由半导体材料制成，导致根据温度的电阻变化。 布置由与电阻层相同的材料制成的监视器电阻图案，以便测量通过OP放大器11的电压变化形式的电阻变化，然后将其馈送到控制电路。 控制电路根据电阻控制栅极电压，以防止显示装置的亮度变化。

    Use of charged-particle tracks in fabricating electron-emitting device having resistive layer
    133.
    发明授权
    Use of charged-particle tracks in fabricating electron-emitting device having resistive layer 失效
    在制造具有电阻层的电子发射器件中使用带电粒子轨迹

    公开(公告)号：US5813892A

    公开(公告)日：1998-09-29

    申请号：US678565

    申请日：1996-07-12

    申请人： Christopher J. Spindt ,  John M. Macaulay

    发明人： Christopher J. Spindt ,  John M. Macaulay

    IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02

    CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    摘要： A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

    摘要翻译： 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。

    Field emission displays with low function emitters and method of making low work function emitters
    134.
    发明授权
    Field emission displays with low function emitters and method of making low work function emitters 失效
    具有低功能发射极的场发射显示器和制作低功函数发射器的方法

    公开(公告)号：US5804910A

    公开(公告)日：1998-09-08

    申请号：US599443

    申请日：1996-01-18

    申请人： Kevin Tjaden ,  James J. Alwan

    发明人： Kevin Tjaden ,  James J. Alwan

    IPC分类号： H01J1/304 ,  H01J1/30

    CPC分类号： H01J1/3042 ,  H01J2201/304 ,  H01J2201/319

    摘要： A cold cathode structure, useful for field emission displays, is disclosed. A thin resistive silicon film is disposed on a glass substrate; conductive emitter tips are disposed on top thereof. An alloy of amorphous silicon and amorphous carbon is used for the emitter tips. The proportion of the carbon in the alloy increases, gradually or abruptly, from the base to the top of the emitter tips. The carbon gradient is implemented during the process step, in which an n-type silicon layer is formed from which the emitter tips are made in subsequent masking and etching steps. The amount of carbon makes the emitter tips harder and gives lower work function at greater stability. Moreover, the carbon gradient allows for additional sharpening of the emitter tips.

    摘要翻译： 公开了一种用于场发射显示器的冷阴极结构。 薄电阻硅膜设置在玻璃基板上; 导电发射极尖端设置在其顶部。 非晶硅和无定形碳的合金用于发射极尖端。 合金中碳的比例逐渐或突然地从发射极尖端的基极向顶部增加。 碳梯度在工艺步骤中实现，其中形成n型硅层，在其后面的掩模和蚀刻步骤中制成发射极尖端。 碳的量使得发射极尖端更硬，并且在更高的稳定性下赋予更低的功函数。 此外，碳梯度允许发射器尖端的额外的锐化。

    Field emission devices employing enhanced diamond field emitters
    138.
    发明授权
    Field emission devices employing enhanced diamond field emitters 失效
    采用增强金刚石场发射体的场致发射器件

    公开(公告)号：US5744195A

    公开(公告)日：1998-04-28

    申请号：US752234

    申请日：1996-11-19

    申请人： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

    发明人： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

    IPC分类号： C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  C23C16/26 ,  B05D3/06

    CPC分类号： H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

    摘要： Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

    摘要翻译： 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

    Field emission device having nanostructured emitters
    140.
    发明授权
    Field emission device having nanostructured emitters 失效
    具有纳米结构发射体的场致发射器件

    公开(公告)号：US5726524A

    公开(公告)日：1998-03-10

    申请号：US656573

    申请日：1996-05-31

    申请人： Mark K. Debe

    发明人： Mark K. Debe

    IPC分类号： H01J1/30 ,  H01J1/304 ,  C23C16/00

    CPC分类号： H01J1/3042

    摘要： An electric field emission device includes an electrode that includes a layer having a dense array of discrete, solid microstructures disposed on at least a portion of one or more surfaces of a substrate, the microstructures having an areal number density of greater than 10.sup.7 /cm.sup.2, the microstructures being individually conformally overcoated with one or more layers of an electron emitting material, the overcoated electron emitting material being disposed on at least a portion of the microstructures and have a surface morphology which is nanoscopically rough. A method for preparing the electrode used in the invention is discussed.

    摘要翻译： 电场发射装置包括电极，其包括布置在基底的一个或多个表面的至少一部分上的离散的，固体微结构的密集阵列的层，所述微结构具有大于107 / cm 2的面密度密度， 微结构单独地由一层或多层电子发射材料共涂覆，外涂电子发射材料设置在微结构的至少一部分上并具有纳米尺度粗糙的表面形态。 讨论了本发明中使用的电极的制备方法。