公开(公告)号：US11880640B2

公开(公告)日：2024-01-23

申请号：US18118657

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos Batistakis ,  Scott Anderson Middlebrooks ,  Sander Frederik Wuister

IPC: G06F7/50 ,  G06F30/28 ,  G03F7/00 ,  G06F119/14

CPC classification number: G06F30/28 ,  G03F7/705 ,  G06F2119/14

Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

公开(公告)号：US11880144B2

公开(公告)日：2024-01-23

申请号：US17603812

申请日：2020-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Sander Jeroen Hermanussen ,  Johannes Petrus Martinus Bernardus Vermeulen ,  Hans Butler ,  Bas Jansen ,  Michael Marinus Anna Steur

IPC: G03F7/00 ,  H01L21/687

CPC classification number: G03F7/70725 ,  G03F7/70708 ,  G03F7/70783 ,  H01L21/6875 ,  H01L21/68735 ,  H01L21/68785

Abstract: An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

公开(公告)号：US11875101B2

公开(公告)日：2024-01-16

申请号：US17616368

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Feng Chen ,  Matteo Alessandro Francavilla ,  Jan Wouter Bijlsma

IPC: G06F30/30 ,  G06F30/398 ,  G03F7/00 ,  G06F30/392 ,  G06F30/27 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F7/705 ,  G06F30/27 ,  G06F30/392 ,  G06F2119/18

Abstract: A patterning process modeling method includes determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end includes a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：US11874103B2

公开(公告)日：2024-01-16

申请号：US17412525

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Junichi Kanehara ,  Stefan Carolus Jacobus Antonius Keij ,  Thomas Augustus Mattaar ,  Petrus Franciscus Van Gils

IPC: G01B11/27

CPC classification number: G01B11/272

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

公开(公告)号：US20240012341A1

公开(公告)日：2024-01-11

申请号：US18252294

申请日：2021-10-14

Applicant: ASML Netherlands B.V.

Inventor： Gustaaf Galein VAN EDEN ,  Cung Vuong NGUYEN ,  Ksenia Sergeevna MAKARENKO

IPC: G03F7/00 ,  H01L21/683

CPC classification number: G03F7/70708 ,  H01L21/6833

Abstract: An electrostatic clamp for holding an object by electrostatic force is disclosed. The electrostatic clamp comprises a dielectric member having a plurality of conductive burls extending from a surface to define a plane in which the object is held, and a conductive element extending between and connecting the plurality of burls. The conductive element is disposed within one or more trenches formed on the surface of the dielectric member. Also disclosed is a method of manufacturing the electrostatic clamp.

公开(公告)号：US20240012339A1

公开(公告)日：2024-01-11

申请号：US18255310

申请日：2021-12-08

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Arie Jeffrey DEN BOEF

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Disclosed is method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.

公开(公告)号：US20240012332A1

公开(公告)日：2024-01-11

申请号：US18038601

申请日：2021-11-12

Applicant: ASML Netherlands B.V.

Inventor： Luc Roger Simonne HASPESLAGH ,  Nitesh PANDEY ,  Ties Wouter VAN DER WOORD ,  Halil Gökay YEGEN ,  Guilherme BRONDANI TORRI ,  Sebastianus Adrianus GOORDEN ,  Alexander Ludwig KLEIN ,  Jim Vincent OVERKAMP ,  Edgar Alberto OSORIO OLIVEROS

IPC: G03F7/00 ,  G02B26/08 ,  H02N2/10 ,  H02N2/00 ,  H10N30/50 ,  H10N30/05

CPC classification number: G03F7/70116 ,  G02B26/0858 ,  H02N2/108 ,  H02N2/009 ,  H10N30/50 ,  H10N30/05 ,  G03F7/70625 ,  G03F7/7015 ,  G03F7/706849

Abstract: A micromirror array comprises a substrate, a plurality of mirrors for reflecting incident light and, for each mirror of the plurality of mirrors, at least one multilayer piezoelectric actuator for displacing the mirror, wherein the at least one multilayer piezoelectric actuator is connected to the substrate, and wherein the at least one multilayer piezoelectric actuator comprises a plurality of piezoelectric layers of piezoelectric material interleaved with a plurality of electrode layers to form a stack of layers. Also disclosed is a method of forming such a micromirror array. The micromirror array may be used in a programmable illuminator. The programmable illuminator may be used in a lithographic apparatus and/or in an inspection and/or metrology apparatus.

公开(公告)号：US20240004283A1

公开(公告)日：2024-01-04

申请号：US18227833

申请日：2023-07-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim Aleksandrovich Nasalevich ,  Erik Achilles ABEGG ,  Nirupam BANERJEE ,  Michiel Alexander BLAUW ,  Derk Servatius Gertruda BROUNS ,  Paul JANSSEN ,  Matthias KRUIZINGA ,  Egbert LENDERINK ,  Nicolae MAXIM ,  Andrey NIKIPELOV ,  Arnoud Willem NOTENBOOM ,  Claudia PILIEGO ,  Mária PÉTER ,  Gijsbert RISPENS ,  Nadja SCHUH ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Antonius Willem VERBURG ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN ,  Aleksandar Nikolov ZDRAVKOV

IPC: G03F1/62 ,  G03F7/00 ,  G03F1/82 ,  G02B5/20 ,  G02B5/28

CPC classification number: G03F1/62 ,  G03F7/70191 ,  G03F7/70983 ,  G03F1/82 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70575 ,  G02B5/208 ,  G02B5/283

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：US11860554B2

公开(公告)日：2024-01-02

申请号：US17606785

申请日：2020-03-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Mark Johannes Hermanus Frencken ,  Theodorus Marcus Nagtegaal ,  Oleg Viacheslavovich Voznyi

IPC: G03F7/00

CPC classification number: G03F7/70783 ,  G03F7/7075 ,  G03F7/70875

Abstract: The invention provides an object positioner comprising:—an object support having an object support surface which is configured to engage at least a part of an object, said object support surface having a support surface temperature,—a thermal device, which thermal device is configured to provide at least a part of the object with a first object temperature, which first object temperature differs from the support surface temperature by a first predetermined temperature difference.

公开(公告)号：US20230417628A1

公开(公告)日：2023-12-28

申请号：US18035895

申请日：2021-10-05

Applicant: ASML Netherlands B.V.

Inventor： Achim WOESSNER ,  Roberto PAGANO ,  Mark-Jan SPIJKMAN

IPC: G01M11/02 ,  G03F7/00

CPC classification number: G01M11/0271 ,  G03F7/706849 ,  G03F7/706

Abstract: A measurement system (11), the measurement system comprising: a sensor apparatus (22); an illumination system (IL1) arranged to illuminate the sensor apparatus with radiation, the sensor apparatus comprising a patterned region arranged to receive a radiation beam and to form a plurality of diffraction beams, the diffraction beams being separated in a shearing direction; the sensor apparatus comprising a radiation detector (24); wherein the patterned region is arranged such that at least some of the diffraction beams form interference patterns on the radiation detector; wherein the sensor apparatus comprises a plurality of patterned regions (19a-19c, 20a, 20b), and wherein pitches of the patterned regions are different in adjacent patterned regions.