Abstract:
The voltage control generator for a semiconductor device is disclosed, in which the substrate bias voltage through the oscillation period of the step-up voltage generator circuit are quickly adjusted with respect to the level variation of a corresponding voltage. The circuit according to the present invention includes a control level generator generating at least one control signal for detecting a substrate bias voltage level from a substrate of a semiconductor device and adjusting the width of an oscillation period to a set level in accordance with the detected signal, a voltage control oscillator generating a signal in which the width of an oscillation period is varied to the set level in response to an output signal from the control level generator, and a charge pump supplying a stable bias voltage to the substrate of the semiconductor device by increasing or decreasing a pumping speed in response to an output signal from the voltage control oscillator. Since the voltage control oscillator is used as an oscillator for determining the pumping period of the charge pump, it is possible to effectively control the oscillation period in accordance with the detected voltage level variation for thereby decreasing the power consumption.
Abstract:
A data driver is disclosed. The data driver includes a first latch unit including a plurality of first latches configured to store data, a selector configured to select and/or output data in two or more first latches, a level shifter unit configured to convert a voltage level of the data in the two or more selected first latches and output the voltage level-converted data, and a second latch unit including a plurality of second latches configured to store the voltage level-converted data.
Abstract:
A nonvolatile memory device includes a memory cell array configured to store an authentication key and authentication key configuration information in first and second pluralities of nonvolatile memory cells, along with data whose security is to be protected, and a control circuit controlling an operation of the memory cell array.
Abstract:
A data driver is disclosed. The data driver includes a first latch unit including a plurality of first latches configured to store data, a selector configured to select and/or output data in two or more first latches, a level shifter unit configured to convert a voltage level of the data in the two or more selected first latches and output the voltage level-converted data, and a second latch unit including a plurality of second latches configured to store the voltage level-converted data.
Abstract:
A system and method for filtering is disclosed, which is capable of accomplishing a filtering operation at a high recovery rate of 96% or more, and realizing a compact and simplified system structure, the system comprising a water bath including an inlet and a discharging hole, wherein feed water to be treated is supplied to the inside of the water bath through the inlet, and concentrated water is discharged out through the discharging hole; and plural membrane cassettes including first and second membrane cassettes submerged into the feed water contained in the water bath, wherein the first membrane cassette is positioned nearest to the inlet, and the second membrane cassette is positioned nearest to the discharging hole, wherein the first membrane cassette treats the feed water with a first impurity concentration; the second membrane cassette treats the feed water with a second impurity concentration; and the first impurity concentration is smaller than the second impurity concentration.
Abstract:
A hollow fiber membrane module is disclosed, which is capable of preventing a bundle of hollow fiber membranes from being separated from a module case, the hollow fiber membrane module for accommodating a bundle of hollow fiber membranes closely held together through the use of potting agent, including a module case including: a first inner surface serving as a projection on which the bundle of hollow fiber membranes is stably placed; a second inner surface upwardly extending from one end of the first inner surface, the second inner surface including at least one separation-preventing groove to prevent the bundle of hollow fiber membranes from being separated from the module case; a third inner surface downwardly extending from the other end of the first inner surface; and a fourth inner surface connected to the third inner surface.
Abstract:
A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.
Abstract:
A memory device includes a memory cell array including a plurality of memory blocks, each memory block including a plurality of memory cells, a plurality of word lines coupled to rows of the plurality of memory cells, a plurality of bit lines coupled to columns of the plurality of memory cells, and a control unit controlling an erase operation so that erase data is simultaneously written in the plurality of memory cells corresponding to an erase unit. A first erase mode may include a first erase unit and a first erase data pattern. A second erase mode may include a second erase unit and a second erase pattern. At least one of the first and second erase units and the first and second erase data patterns are different.
Abstract:
Disclosed are system and method for filtration which can minimize the contamination of the filtering membrane through a pretreatment and perform the pretreatment and the filtration with a filtering membrane in a single filtering unit so that any need for separate and additional space and facility for the pretreatment can be obviated. The system for filtration of the present invention comprises a fine bubble supplier for providing fine bubbles into the feed water. The pretreatment is performed by supplying the feed water to be treated into the filtering unit through a dynamic filtration layer which is formed in the filtering unit as the fine bubbles rise.
Abstract:
One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.