公开(公告)号：US20230375665A1

公开(公告)日：2023-11-23

申请号：US18163429

申请日：2023-02-02

Applicant: DENSO CORPORATION ,  MIRISE Technologies Corporation

Inventor： TAKUYA NAKAMURA ,  TEPPEI YOSHIDA

IPC: G01S7/35 ,  G01S7/02

CPC classification number: G01S7/354 ,  G01S7/023

Abstract: A radar device includes: a section generation unit configured to generate sections to divide a continuous time-series signal into ranges; a section representative value calculation unit configured to calculate a section representative value that is a representative value of the time-series signal within each of the ranges; a classification unit configured to classify the section representative value between a high interference section representative value containing much interference and a low interference section representative value containing little interference; a threshold calculation unit configured to calculate an interference determination threshold based on the low interference section representative value; and a determination value calculation unit configured to calculate an interference determination value based on the interference determination threshold.

公开(公告)号：US11825267B2

公开(公告)日：2023-11-21

申请号：US17583749

申请日：2022-01-25

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Tomoki Tanemura ,  Hideyuki Nagai

IPC: H04R19/04 ,  H03G5/16 ,  H04R3/04 ,  H04R19/00

CPC classification number: H04R19/04 ,  H03G5/165 ,  H04R3/04 ,  H04R19/005 ,  H04R2201/003

Abstract: A microphone has a MEMS device, a driver, and a control unit. The MEMS device outputs a first electrical signal according to an acoustic pressure. The driver vibrates the MEMS device by a drive signal. The control unit calculates a correction value for correcting the first electric signal based on a second electric signal output from the MEMS device when the MEMS device is vibrated by the drive signal.

公开(公告)号：US20230350007A1

公开(公告)日：2023-11-02

申请号：US18173217

申请日：2023-02-23

Applicant: DENSO CORPORATION ,  MIRISE Technologies Corporation

Inventor： Takuya NAKAMURA

IPC: G01S7/02 ,  G01S7/35

CPC classification number: G01S7/023 ,  G01S7/354 ,  G01S13/931

Abstract: An interference signal processing unit of a radar device is configured to: determine an interference range in a sample signal; generate a modified sample signal by multiplying the sample signal by a reduction signal; convert the modified sample signal into a first frequency domain sample signal in a frequency domain; convert the reduction signal into a subtraction template signal in a frequency domain; calculate an evaluation value based on the first frequency domain sample signal and the subtraction template signal so as to determine whether a partial signal of the first frequency domain sample signal is derived from a reflected wave from an object; and generate an interference-removed signal so that a time domain signal based on the partial signal determined as derived from the reflected wave based on the evaluation value is included in the corresponding range of the interference-removed signal.

公开(公告)号：US11791156B2

公开(公告)日：2023-10-17

申请号：US17591202

申请日：2022-02-02

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Tetsuya Yamada

IPC: H01L21/02 ,  H01L23/544 ,  H01L21/477 ,  H01L21/265

CPC classification number: H01L21/02389 ,  H01L21/265 ,  H01L21/477 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method for manufacturing a semiconductor device, includes: forming an alignment mark in a non-element region of a gallium-based compound semiconductor layer; and, after the forming of the alignment mark, forming an element structure in an element region of the gallium-based compound semiconductor layer. The forming of the alignment mark further includes: ion-implanting a metal into a part of a surface layer portion of the non-element region of the gallium-based compound semiconductor layer; and annealing the gallium-based compound semiconductor layer.

公开(公告)号：US20230327541A1

公开(公告)日：2023-10-12

申请号：US18192892

申请日：2023-03-30

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE TECHNOLOGIES CORPORATION

Inventor： TAKESHI INOUE ,  AKIMASA NIWA ,  JUNICHI HASEGAWA

IPC: H02M1/32 ,  H02M1/08 ,  H02M1/00 ,  H02M7/5387

CPC classification number: H02M1/327 ,  H02M1/08 ,  H02M1/0009 ,  H02M7/53871

Abstract: A power converter includes multiple arms, a temperature detector, a voltage detector, a current detector, a heat generation controller, and a heat resistance estimator. Each of the multiple arms includes a target element being a semiconductor element. The heat resistance estimator determines a heat resistance of the target element based on a temperature difference between a first temperature of the target element and a second temperature of the target element, a current through the target element detected by the current detector, and a voltage across conduction terminals of the target element detected by the voltage detector. The first temperature is a temperature detected by the temperature detector in a state where the heat generation controller has not caused the target element to generate heat. The second temperature is a temperature detected by the temperature detector in a state where the heat generation controller has caused the target element to generate heat.

公开(公告)号：US20230326748A1

公开(公告)日：2023-10-12

申请号：US18188821

申请日：2023-03-23

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： SHOSUKE NAKABAYASHI ,  MASATAKE NAGAYA ,  CHIAKI SASAOKA ,  SHOICHI ONDA ,  JUN KOJIMA ,  DAISUKE KAWAGUCHI ,  RYUJI SUGIURA ,  TOSHIKI YUI ,  KEISUKE HARA ,  TOMOMI ARATANI

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/304

CPC classification number: H01L21/02389 ,  H01L21/268 ,  H01L21/304

Abstract: A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

公开(公告)号：US20230324175A1

公开(公告)日：2023-10-12

申请号：US18189322

申请日：2023-03-24

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Hideaki NISHIKAWA ,  Yusuke KAWAI ,  Takahiko YOSHIDA ,  Yuuki INAGAKI ,  Shota HARADA ,  Keitaro ITO ,  Katsuaki GOTO

IPC: G01C19/5691 ,  B81B3/00

CPC classification number: G01C19/5691 ,  B81B3/0086 ,  B81B2201/0242 ,  B81B2203/04

Abstract: A mounting structure includes a micro vibrator and a mounting substrate. The micro vibrator includes a curved surface portion having an annular curved surface and a connecting portion extending from the curved surface portion toward an inner center position of the curved surface portion. The micro vibrator is disposed so that the connecting portion is bonded to the mounting substrate and the curved surface portion is in a hollow state free from other elements. The mounting substrate includes a plurality of electrode portions that are arranged to face and surround a rim of the curved surface portion of the micro vibrator, and spaced apart from each other, the rim being an end of the curved surface portion opposite to the connecting portion. Further, the mounting substrate includes a guard electrode.

公开(公告)号：US11784223B2

公开(公告)日：2023-10-10

申请号：US17523071

申请日：2021-11-10

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Hirofumi Kida

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/0865 ,  H01L29/0869 ,  H01L29/2003 ,  H01L29/66712 ,  H01L29/7802

Abstract: A compound semiconductor layer in a semiconductor device includes a drift region of a first conductivity type, a JFET region of the first conductivity type disposed above the drift region, a body region of a second conductivity type disposed above the drift region and adjacent to the JFET region, and a JFET embedded region of the second conductivity type or i-type disposed in the JFET region. The JFET region has a bottom surface portion adjacent to the drift region, a side surface portion adjacent to the body region, and an inside portion adjacent to the JFET embedded region, and further has a high concentration portion at the bottom surface portion and the side surface portion. The high concentration portion has an impurity concentration higher than an impurity concentration of the inside portion.

公开(公告)号：US20230294210A1

公开(公告)日：2023-09-21

申请号：US18183307

申请日：2023-03-14

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： YUUKI INAGAKI ,  YUJI ITO ,  YUKI ICHIHASHI

IPC: B23K26/38 ,  H03B5/02 ,  G01C19/5691 ,  B23K26/08 ,  B23K37/04

CPC classification number: B23K26/38 ,  H03B5/02 ,  G01C19/5691 ,  B23K26/0823 ,  B23K26/0869 ,  B23K37/0443

Abstract: A method of manufacturing a micro-oscillator includes: preparing a substrate having a flat portion and a curved surface portion formed in a three-dimensional curved shape protruding from one surface of the flat portion, the curved surface portion being surrounded by the flat portion; and irradiating an outer surface of the curved surface portion with a laser beam to separate the curved surface portion from the flat portion.

公开(公告)号：US20230290849A1

公开(公告)日：2023-09-14

申请号：US18161329

申请日：2023-01-30

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： TAIGA GOTO

IPC: H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/4236 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/1095

Abstract: In a semiconductor device, a semiconductor substrate has an element region and a peripheral region, and trenches are defined on an upper surface of the semiconductor substrate. The trenches extend in a first direction, and are arranged at intervals in a second direction. The element region includes an n-type source region, a p-type contact region, a p-type body region, an n-type drift region, a p-type bottom region, and p-type connection regions. The bottom region is spaced from a bottom surface of the trenches. The connection regions connect the body region and the bottom region, extend in the first direction, and are arranged at intervals in the second direction. The element region has outer side portions and a central portion in the second direction. An interval between the connection regions in the second direction is greater in the outer side portion than in the central portion.