Abstract:
A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.
Abstract:
In an embodiment, a fluid ejection device includes an ink slot formed in a printhead die. The fluid ejection device also includes a printhead-integrated ink level sensor (PILS) to sense an ink level of a chamber in fluid communication with the slot, and a clearing resistor circuit disposed within the chamber to clear the chamber of ink.
Abstract:
A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to Ncontain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
Abstract:
Printheads having memories formed thereon are disclosed. An example apparatus includes a printhead body comprising a first metal layer. The example apparatus also include a memory formed on the print-head body. The memory includes the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers.
Abstract:
In an embodiment, a fluid ejection device includes a fluid feed slot formed in a printhead die and a plurality of printhead-integrated ink level sensors (PILS). A fluid ejection device may include a first PILS to sense an ink level of a first chamber in fluid communication with the fluid feed slot, the first PILS to detect an empty ink level of the first chamber when the fluid ejection device is at a first ink level state, and a second PILS to sense an ink level of a second chamber in fluid communication with the fluid feed slot, the second PILS to detect an empty ink level of the second chamber when the fluid ejection device is at a second ink level state, different than the first ink level state
Abstract:
Examples of fluid ejection apparatuses and methods for making fluid ejection apparatuses are described. An example method may include forming a fluid feed slot in a bulk layer of a substrate, forming a plurality of ink feed channels in at least an epitaxial layer of the substrate, each of the ink feed channels fluidically coupled to the fluid feed slot, and forming a plurality of drop generators over the substrate such that the epitaxial layer of the substrate is between the plurality of drop generators and the bulk layer and such that the each of the drop generators is fluidically coupled to the fluid feed slot by at least one of the ink feed channels.
Abstract:
Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
Abstract:
A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
Abstract:
An integrated circuit (IC) erasable programmable read-only memory (EPROM) structure for a thermal inkjet printhead includes: a fire line to provide fire line data; a select line to provide selecting data; a firing cell coupled to the fire line; an EPROM cell coupled to the fire line; a selector cell coupled to the select line, the firing cell and the EPROM cell; and a data switching circuit to provide address data to the firing cell or the EPROM cell. The data switching circuit and the selector cell selectively enable transfer of the fire line data from the fire line to the firing cell or the EPROM cell as a function of state of the selecting data on the select line and the address data from the data switching circuit.