公开(公告)号：US20180374993A1

公开(公告)日：2018-12-27

申请号：US16104857

申请日：2018-08-17

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L33/58 ,  H01L33/42 ,  H01L31/0216 ,  H01L33/22 ,  H01L31/0236

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US09748442B2

公开(公告)日：2017-08-29

申请号：US14510914

申请日：2014-10-09

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

公开(公告)号：US09653654B2

公开(公告)日：2017-05-16

申请号：US15227198

申请日：2016-08-03

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Lifang Xu

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/502 ,  H01L33/56 ,  H01L2933/0016

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

公开(公告)号：US20150028347A1

公开(公告)日：2015-01-29

申请号：US14510914

申请日：2014-10-09

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Abstract translation: 本文公开了发光二极管和相关的制造方法。 在一个实施例中，发光二极管（LED）包括衬底，由衬底承载的半导体材料和靠近半导体材料的有源区。 半导体材料具有靠近基板的第一表面和与第一表面相对的第二表面。 半导体材料的第二表面通常是非平面的，并且有源区域通常符合半导体材料的非平面第二表面。