SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING
    2.
    发明申请
    SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING 有权
    具有细胞阵列的固态照明装置及相关的制造方法

    公开(公告)号:US20140319536A1

    公开(公告)日:2014-10-30

    申请号:US14262538

    申请日:2014-04-25

    Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

    Abstract translation: 本文公开了具有蜂窝阵列和相关制造方法的固态照明(“SSL”)设备。 在一个实施例中,发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区,并且有源区的至少一部分位于半导体材料的孔中。

    SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING
    7.
    发明申请
    SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING 有权
    固体照明装置在半极性表面和相关的制造方法

    公开(公告)号:US20130252365A1

    公开(公告)日:2013-09-26

    申请号:US13897922

    申请日:2013-05-20

    CPC classification number: H01L33/32 H01L33/16 H01L33/20 H01L33/24

    Abstract: Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.

    Abstract translation: 本文公开了在半极面上生长的固态照明装置和相关的制造方法。 在一个实施例中,固态光器件包括具有N型氮化镓(“GaN”)材料的发光二极管,与N型GaN材料间隔开的P型GaN材料和氮化铟镓( “InGaN”)/ GaN多量子阱(“MQW”)有源区直接在N型GaN材料和P型GaN材料之间。 N型GaN,InGaN / GaN MQW和P型GaN材料中的至少一种生长为半极性侧壁。

    LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

    公开(公告)号:US20210328094A1

    公开(公告)日:2021-10-21

    申请号:US17360350

    申请日:2021-06-28

    Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

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