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公开(公告)号：US20170288089A1
公开(公告)日：2017-10-05
申请号：US15631836
申请日：2017-06-23
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/16 , H01L33/32
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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2.发明申请SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING 有权具有细胞阵列的固态照明装置及相关的制造方法公开(公告)号：US20140319536A1
公开(公告)日：2014-10-30
申请号：US14262538
申请日：2014-04-25
Applicant: Micron Technology, Inc.
Inventor： Scott E. Sills , Lifang Xu , Scott D. Schellhammer , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/405
Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.
Abstract translation: 本文公开了具有蜂窝阵列和相关制造方法的固态照明（“SSL”）设备。 在一个实施例中，发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区，并且有源区的至少一部分位于半导体材料的孔中。
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公开(公告)号：US08709846B2
公开(公告)日：2014-04-29
申请号：US13927660
申请日：2013-06-26
Applicant: Micron Technology, Inc.
Inventor： Niraj Rana , Zaiyuan Ren
IPC: H01L33/00
CPC classification number: H01L33/0075 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/02521 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/24
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.
Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（GaN）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（InGaN） 材料直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN和P型GaN材料中的至少一种具有非平面表面。
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公开(公告)号：US20240128396A1
公开(公告)日：2024-04-18
申请号：US18535966
申请日：2023-12-11
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/16 , H01L33/32
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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公开(公告)号：US20210184079A1
公开(公告)日：2021-06-17
申请号：US17175224
申请日：2021-02-12
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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Patent Agency Ranking
公开(公告)号：US20170345972A1
公开(公告)日：2017-11-30
申请号：US15679958
申请日：2017-08-17
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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7.发明申请SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING 有权固体照明装置在半极性表面和相关的制造方法公开(公告)号：US20130252365A1
公开(公告)日：2013-09-26
申请号：US13897922
申请日：2013-05-20
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Zaiyuan Ren
IPC: H01L33/32
Abstract: Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.
Abstract translation: 本文公开了在半极面上生长的固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（“GaN”）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（ “InGaN”）/ GaN多量子阱（“MQW”）有源区直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN / GaN MQW和P型GaN材料中的至少一种生长为半极性侧壁。
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公开(公告)号：US20210328094A1
公开(公告)日：2021-10-21
申请号：US17360350
申请日：2021-06-28
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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9.发明申请公开(公告)号：US20160087144A1
公开(公告)日：2016-03-24
申请号：US14810092
申请日：2015-07-27
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/06 , C30B25/00 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32
Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.
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公开(公告)号：US20240297269A1
公开(公告)日：2024-09-05
申请号：US18664203
申请日：2024-05-14
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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