公开(公告)号：US20130256469A1

公开(公告)日：2013-10-03

申请号：US13852023

申请日：2013-03-28

Applicant: ABB TECHNOLOGY AG

Inventor： Gûnter Rasche ,  Karl-Heinz Rackebrandt ,  Laurenc Wertheim

IPC: F16L3/237

CPC classification number: G01F1/8495 ,  F16L3/22 ,  F16L3/237 ,  G01F1/8413 ,  G01F1/8422

Abstract: A holding part is provided for connecting two pipes running parallel to each other, such as the two parallel measuring pipes of a Coriolis mass flowmeter, at a defined spacing. The holding part includes a first holding ring with a first holding opening for a first pipe, a second holding ring with a second holding opening for a second pipe, and a holding web firmly connecting the two holding rings and defining the spacing between the two holding rings. The holding part also includes a first slot running radially and having a first slot width in the first holding ring, a second slot running radially and having a second slot width in the second holding ring, and a slot width changing device, by actuation of which the first and the second slot width and therefore the diameter of the first and second holding opening can be changed simultaneously.

Abstract translation: 提供保持部件，用于连接两个彼此平行的管道，例如科里奥利质量流量计的两个平行的测量管道，以一定的间隔连接。 保持部包括：第一保持环，具有用于第一管的第一保持开口，具有用于第二管的第二保持开口的第二保持环，以及将两个保持环牢固地连接并且限定两个保持 戒指。 保持部还包括径向延伸并且在第一保持环中具有第一槽宽度的第一狭槽，径向延伸并且在第二保持环中具有第二槽宽度的第二槽，以及槽宽度改变装置， 第一和第二槽宽度，因此第一和第二保持开口的直径可以同时改变。

公开(公告)号：USD690263S1

公开(公告)日：2013-09-24

申请号：US29408621

申请日：2011-12-14

Applicant: Stanley Lohne ,  Havard Hadland ,  Thor Endre ,  Tom-Rune Bjortuft ,  Paal Kristian Skryten ,  John-Anders Tveten

Designer： Stanley Lohne ,  Havard Hadland ,  Thor Endre ,  Tom-Rune Bjortuft ,  Paal Kristian Skryten ,  John-Anders Tveten

公开(公告)号：US20130240367A1

公开(公告)日：2013-09-19

申请号：US13886590

申请日：2013-05-03

Applicant: ABB TECHNOLOGY AG

Inventor： Dietmar GENTSCH

IPC: C25D7/00

CPC classification number: C25D7/00 ,  H01H1/021

Abstract: A method for producing electrical components for electrical contacts, and such a component are provided. To achieve simpler production of a partial surface treatment, which likewise exhibits optimal current carrying capacity, with minimum material use of noble metals, the entirety of the components are provided with an electrically insulating passivation layer, and the passivation is then removed chemically or mechanically at the contact points of the components. The entire components are put into an electrolytic bath, and a noble metal is deposited only on the parts of the components from which the passivation layer has been removed.

Abstract translation: 提供了一种用于制造用于电触头的电气部件的方法，以及这种部件。 为了实现更简单的部分表面处理的生产，其同样表现出最佳的载流能力，使用贵金属的最小材料使用，整个部件设置有电绝缘钝化层，然后化学或机械地将钝化物 组件的接触点。 将整个组分放入电解浴中，并且将贵金属沉积在已经从其去除钝化层的组分的部分上。

公开(公告)号：US08527652B2

公开(公告)日：2013-09-03

申请号：US12817916

申请日：2010-06-17

Applicant: Wolfgang Wimmer

Inventor： Wolfgang Wimmer

IPC: G06F15/16

CPC classification number: H04L67/125 ,  H04L67/12

Abstract: The present disclosure is directed to an exemplary interface description or structure of an inter-bay Substation Automation (SA) application. The interface of the application to other elements of the SA system, for example to a bay controller, IED, OPC server, HMI, and/or gateway, is examined to fully automate the inter-bay SA application configuration and implementation. A formal description or structure of the base SA system as for example, including an IEC 61850 SCD file can be used to generate a formal description of the interfaces of the inter-bay SA application to be engineered. Logical nodes can be connected to the process single line diagram and integrated into the SCD file of the base SA system, thereby generating an enhanced SCD file.

Abstract translation: 本公开涉及间隔间变电站自动化（SA）应用的示例性接口描述或结构。 检查应用程序与SA系统的其他元素（例如，托架控制器，IED，OPC服务器，HMI和/或网关）的接口，以完全自动化间隔间SA应用程序配置和实现。 可以使用例如包括IEC 61850 SCD文件的基本SA系统的正式描述或结构来生成要被设计的间隔间间隔SA应用的接口的形式描述。 逻辑节点可以连接到过程单线图，并集成到基本SA系统的SCD文件中，从而生成增强的SCD文件。

公开(公告)号：US20130223112A1

公开(公告)日：2013-08-29

申请号：US13857574

申请日：2013-04-05

Applicant: ABB TECHNOLOGY AG

Inventor： Kefas Damazio-Coelho ,  Matthias Luescher ,  Oscar Apeldoorn ,  Thomas Berner

IPC: H02M1/34

CPC classification number: H02M1/34 ,  H02M1/32 ,  H02M7/06 ,  H02M7/48 ,  H02M2001/346 ,  Y02B70/1491

Abstract: An exemplary converter circuit has a converter unit with plural actuatable power semiconductor switches, and the DC voltage side of which is connected to a capacitive energy storage circuit. The capacitive energy storage circuit has at least one capacitive energy store and at least one snubber network for limiting the rate of current or voltage rise on the actuatable power semiconductor switches of the converter unit. In order to reduce undesirable oscillations in an overcurrent in the capacitive energy storage circuit, the capacitive energy storage circuit has at least one passive nonactuatable damping unit having a unidirectional current-flow direction, where the passive nonactuatable damping unit has a diode and a damping resistor.

Abstract translation: 示例性转换器电路具有多个可致动功率半导体开关的转换器单元，其直流电压侧连接到电容性能量存储电路。 电容性能量存储电路具有至少一个电容性能量存储器和用于限制转换器单元的可致动功率半导体开关上的电流或电压上升速率的至少一个缓冲器网络。 为了减少电容性能量存储电路中的过电流的不期望的振荡，电容性能量存储电路具有至少一个具有单向电流流动方向的无源非可制动阻尼单元，其中无源非可制动阻尼单元具有二极管和阻尼电阻 。

公开(公告)号：US08519679B2

公开(公告)日：2013-08-27

申请号：US13614707

申请日：2012-09-13

Applicant: Lennart Angquist ,  Lars Paulsson ,  Ake Petersson ,  Bjorn Thordvaldsson

Inventor： Lennart Angquist ,  Lars Paulsson ,  Ake Petersson ,  Bjorn Thordvaldsson

IPC: G05F3/00 ,  G05F1/70 ,  G05F5/00

CPC classification number: H02J3/1864 ,  Y02E40/12

Abstract: A one-phase static var compensator apparatus includes a compensator string consisting of a first static var compensator connected serially to a thyristor valve. The compensator string is arranged to be connected on its first end to one phase of a transmission grid of a rated voltage exceeding 69 kV. Moreover, the thyristor valve includes a plurality of thyristors connected serially and the compensator string is arranged to be directly connected to the transmission grid. A corresponding three phase apparatus is also presented.

Abstract translation: 单相静态无功补偿装置包括由串联连接到晶闸管阀的第一静态无功补偿器组成的补偿器串。 补偿器串被布置成在其第一端连接到额定电压超过69kV的输电网的一相。 此外，晶闸管阀包括串联连接的多个晶闸管，并且补偿器串被布置为直接连接到传输格栅。 还提出了相应的三相设备。

公开(公告)号：US20130218503A1

公开(公告)日：2013-08-22

申请号：US13768262

申请日：2013-02-15

Applicant: ABB Technology AG

Inventor： Frank DRAUTZ

IPC: G01F1/84

CPC classification number: G01F1/84 ,  G01F1/8436

Abstract: Signal processing is disclosed for a Coriolis mass flow meter with one or more measuring tubes and meter electronics, which includes determining relevant modal properties of the flow meter during a measurement process, and adaptively correcting a current measurement result with the relevant modal properties of the flow meter obtained during the measurement process.

Abstract translation: 公开了具有一个或多个测量管和仪表电子装置的科里奥利质量流量计的信号处理，其包括在测量过程期间确定流量计的相关模态特性，并且自适应地校正当前测量结果与流的相关模态特性 在测量过程中获得的仪表。

公开(公告)号：US20130214765A1

公开(公告)日：2013-08-22

申请号：US13855290

申请日：2013-04-02

Applicant: ABB Technology AG

Inventor： Radek JAVORA ,  Jaromir Podzemny ,  Marek Pavlas

IPC: G01R1/02

CPC classification number: G01R1/02 ,  G01R15/181 ,  H01F1/00 ,  H01F5/02 ,  H01F27/2823 ,  H01F38/30 ,  H01L21/00 ,  H01L2221/00

Abstract: A multifunctional measuring device, such as for measuring a current in a primary current conductor in a medium voltage switchgear is disclosed which includes a housing with an aperture for accommodation of the primary current conductor; an inner winding accommodated around the aperture inside of the housing for a measurement of current in a primary current conductor; and an external winding wound on the housing around the aperture for another current measurement.

Abstract translation: 公开了一种多功能测量装置，例如用于测量中压开关装置中的一次电流导体中的电流，其包括具有用于容纳初级电流导体的孔的壳体; 围绕所述壳体内的所述孔周围容纳的内绕组，用于测量初级电流导体中的电流; 以及围绕孔径缠绕在壳体上的外部绕组用于另一电流测量。

公开(公告)号：US20130213936A1

公开(公告)日：2013-08-22

申请号：US13849686

申请日：2013-03-25

Applicant: ABB TECHNOLOGY AG

Inventor： Javier MANTILLA ,  Mathias-Dominic BUERGLER ,  Nicola GARIBOLDI ,  Stephan GROB

IPC: H01H33/02

CPC classification number: H01H33/027 ,  H01H1/0015 ,  H01H33/88 ,  H01H2071/044

Abstract: A gas-insulated high-voltage switch for the interruption of large currents includes a housing, a contact arrangement which is arranged in the housing and has two switching pieces which can be moved relative to one another along an axis. Each switching piece has a rated current contact and an arcing contact. The switch includes a drive which acts on a first of the two switching pieces. The switch includes a device configured to detect and indicate the contact wear of the two arcing contacts caused by the action of the arc. The device has an indicator arranged outside the housing. In the switch, the remaining life which is determined by the contact wear of the arcing contacts is detected and indicated by a simple mechanical mechanism. The device has a transmission mechanism which is fed through the housing in a gas-tight manner and a drive member coupled to the operating element.

Abstract translation: 用于中断大电流的气体绝缘高压开关包括壳体，布置在壳体中的接触装置，并且具有可沿轴线相对于彼此移动的两个切换部件。 每个开关片具有额定电流触点和电弧触点。 开关包括作用于两个开关件中的第一个的驱动器。 开关包括被配置为检测并指示由电弧的作用引起的两个电弧触点的接触磨损的装置。 该装置具有布置在壳体外部的指示器。 在开关中，通过简单的机械机构检测并指示由电弧触点的接触磨损确定的剩余寿命。 该装置具有通过壳体以气密方式供给的传动机构和联接到操作元件的驱动构件。

公开(公告)号：US08501548B2

公开(公告)日：2013-08-06

申请号：US12951334

申请日：2010-11-22

Applicant: Jan Vobecky ,  Munaf Rahimo

Inventor： Jan Vobecky ,  Munaf Rahimo

IPC: H01L21/332

CPC classification number: H01L21/26513 ,  H01L21/268 ,  H01L29/0834 ,  H01L29/66333

Abstract: A method for producing a semiconductor device such as a RC-IGBT or a BIGT having a patterned surface wherein partial regions doped with dopants of a first conductivity type and regions doped with dopants of a second conductivity type are on a same side of a semiconductor substrate is proposed. An exemplary method includes: (a) implanting dopants of the first conductivity type and implanting dopants of the second conductivity type into the surface to be patterned; (b) locally activating dopants of the first conductivity type by locally heating the partial region of the surface to be patterned to a first temperature (e.g., between 900 and 1000° C.) using a laser beam similar to those used in laser annealing; and (c) activating the dopants of the second conductivity type by heating the substrate to a second temperature lower than the first temperature (e.g., to a temperature below 600° C.). Boron is an exemplary dopant of the first conductivity type, and phosphorous is an exemplary dopant of the second conductivity type. Boron can be activated in the regions irradiated only with the laser beam, whereas phosphorus may be activated in a low temperature sintering step on the entire surface.

Abstract translation: 一种用于制造具有图案化表面的诸如RC-IGBT或BIGT的半导体器件的方法，其中掺杂有第一导电类型的掺杂剂的部分区域和掺杂有第二导电类型的掺杂剂的区域在半导体衬底的同一侧 被提出。 一种示例性方法包括：（a）将第一导电类型的掺杂剂注入并将第二导电类型的掺杂剂注入到待图案化的表面中; （b）通过使用类似于激光退火中使用的激光束局部加热要构图的表面的部分区域到第一温度（例如在900和1000℃之间）来局部地激活第一导电类型的掺杂剂; 和（c）通过将衬底加热到​​低于第一温度的第二温度（例如，温度低于600℃）来激活第二导电类型的掺杂剂。 硼是第一导电类型的示例性掺杂剂，磷是第二导电类型的示例性掺杂剂。 可以在仅用激光束照射的区域中激活硼，而磷可以在整个表面上的低温烧结步骤中活化。