公开(公告)号：US10541014B2

公开(公告)日：2020-01-21

申请号：US15779029

申请日：2015-12-24

申请人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

发明人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

IPC分类号： G11C11/16 ,  H01L43/08 ,  G11C11/56 ,  H01L27/22

摘要： Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancement element (TMRE). The MTJ element and TMRE may each be configured to transition between high and low resistance states, e.g., in response to a voltage. In some embodiments, the MTJ and TMRE are configure such that when a read voltage is applied to the cell while the MTJ is in its low resistance state the TMRE is driven to is low resistance state, and when such voltage is applied while the MTJ is in its high resistance state, the TMRE remains in its high resistance state. Devices and systems including such memory cells are also disclosed.

公开(公告)号：US20150333252A1

公开(公告)日：2015-11-19

申请号：US14812655

申请日：2015-07-29

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。

公开(公告)号：US09105839B2

公开(公告)日：2015-08-11

申请号：US14333180

申请日：2014-07-16

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L21/00 ,  H01L43/12 ,  H01L29/82 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。

公开(公告)号：US08786040B2

公开(公告)日：2014-07-22

申请号：US13723866

申请日：2012-12-21

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。

公开(公告)号：US20140175583A1

公开(公告)日：2014-06-26

申请号：US13723866

申请日：2012-12-21

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L29/82 ,  H01L29/66

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

公开(公告)号：US20180350418A1

公开(公告)日：2018-12-06

申请号：US15779029

申请日：2015-12-24

申请人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

发明人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

IPC分类号： G11C11/16 ,  G11C11/56 ,  H01L43/08 ,  H01L27/22

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228 ,  H01L43/08

摘要： Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancement element (TMRE). The MTJ element and TMRE may each be configured to transition between high and low resistance states, e.g., in response to a voltage. In some embodiments, the MTJ and TMRE are configure such that when a read voltage is applied to the cell while the MTJ is in its low resistance state the TMRE is driven to is low resistance state, and when such voltage is applied while the MTJ is in its high resistance state, the TMRE remains in its high resistance state. Devices and systems including such memory cells are also disclosed.

公开(公告)号：US20140329337A1

公开(公告)日：2014-11-06

申请号：US14333180

申请日：2014-07-16

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。

公开(公告)号：US09214215B2

公开(公告)日：2015-12-15

申请号：US14431607

申请日：2013-06-10

申请人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles S. Kuo ,  Mark L. Doczy ,  David L. Kencke

发明人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles S. Kuo ,  Mark L. Doczy ,  David L. Kencke

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/56

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。

公开(公告)号：US08913422B2

公开(公告)日：2014-12-16

申请号：US13630896

申请日：2012-09-28

申请人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles C. Kuo ,  Mark L. Doczy ,  David L. Kencke

发明人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles C. Kuo ,  Mark L. Doczy ,  David L. Kencke

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/15 ,  G11C11/56 ,  H01L27/22 ,  H01F10/32 ,  B82Y25/00

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。

公开(公告)号：US20150243336A1

公开(公告)日：2015-08-27

申请号：US14431607

申请日：2013-06-10

申请人： Elijah V. KARPOV ,  Brian S. DOYLE ,  Kaan OGUZ ,  Satyarth SURI ,  Robert S. CHAU ,  Charles C. KUO ,  Mark L. DOCZY ,  David L. KENCKE ,  INTEL CORPORATION

发明人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles S. Kuo ,  Mark L. Doczy ,  David L. Kencke

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。