公开(公告)号：US11068237B1

公开(公告)日：2021-07-20

申请号：US16503346

申请日：2019-07-03

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: G06F7/503 ,  G06F7/502 ,  H03K19/0185 ,  G06F9/30 ,  H03K19/00

Abstract: A combinational logic circuit includes input circuitry to receive a first and second input signals that transition between supply voltages of first and second voltage domain, respectively. The input circuitry generates, based on the first and second input signals, a first internal signal that transitions between one of the supply voltages of the first voltage domain and one of the supply voltages of the second voltage domain. Output circuitry within the combinational logic circuit generates an output signal that transitions between the upper and lower supply voltages of the first voltage domain in response to transition of the first internal signal.

公开(公告)号：US20210134344A1

公开(公告)日：2021-05-06

申请号：US17099413

申请日：2020-11-16

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Brent Steven Haukness ,  Kenneth L. Wright ,  Thomas Vogelsang

IPC: G11C11/403 ,  G11C11/4097 ,  G11C11/4096 ,  G11C8/08 ,  G11C7/10 ,  G11C7/18 ,  G11C5/02 ,  G11C11/408 ,  G06F12/06 ,  G11C11/406 ,  G11C11/409

Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.

公开(公告)号：US20210133061A1

公开(公告)日：2021-05-06

申请号：US16670798

申请日：2019-10-31

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/20 ,  G11C29/52 ,  G11C11/4093

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US20210049119A1

公开(公告)日：2021-02-18

申请号：US17021024

申请日：2020-09-15

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  John Eric Linstadt ,  Catherine Chen

IPC: G06F13/16 ,  G06F13/42 ,  G06F13/40

Abstract: A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.

公开(公告)号：US10892725B1

公开(公告)日：2021-01-12

申请号：US16700689

申请日：2019-12-02

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Carl W. Werner ,  John Eric Linstadt

IPC: H03F3/16 ,  H03F1/02 ,  H03F19/00 ,  H03F1/30 ,  G06N10/00

Abstract: A signal amplifier is distributed between first and second IC devices and includes a low-power input stage disposed within the first IC device, a bias-current source disposed within the second IC device and an output stage disposed within the second IC device. The output stage includes a resistance disposed within the second IC device and having a first terminal coupled to a drain terminal of a transistor within the input stage via a first signaling line that extends between the first and second IC devices.

公开(公告)号：US10784868B1

公开(公告)日：2020-09-22

申请号：US16576620

申请日：2019-09-19

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: H03K19/0944 ,  H03K19/20

Abstract: A combinational logic circuit includes input circuitry to receive a first input signal that transitions between upper and lower voltages of a first voltage domain, and to generate, in response to the transitions of the first input signal, a first localized signal that transitions between upper and lower voltages of a second voltage domain. The combinational logic circuit additionally includes output circuitry to generate a first output signal that transitions between the upper and lower supply voltages of the first voltage domain based at least in part on the transitions of the first localized signal.

公开(公告)号：US20200162104A1

公开(公告)日：2020-05-21

申请号：US16690764

申请日：2019-11-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: H03M13/05 ,  G06F13/16 ,  G06F3/06 ,  G06F11/10

Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

公开(公告)号：US10447270B2

公开(公告)日：2019-10-15

申请号：US16148977

申请日：2018-10-01

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: H03K19/0185 ,  H03K19/0944 ,  H03K19/20

Abstract: A combinational logic circuit includes input circuitry to receive a first input signal that transitions between upper and lower voltages of a first voltage domain, and to generate, in response to the transitions of the first input signal, a first localized signal that transitions between upper and lower voltages of a second voltage domain. The combinational logic circuit additionally includes output circuitry to generate a first output signal that transitions between the upper and lower supply voltages of the first voltage domain based at least in part on the transitions of the first localized signal.

公开(公告)号：US10402110B2

公开(公告)日：2019-09-03

申请号：US15642860

申请日：2017-07-06

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: G06F3/06 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/18 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4097

Abstract: Same sized blocks of data corresponding to a single read/write command are stored in the same memory array of a memory device, but using different formats. A first one of these formats spreads the data in the block across a larger number of memory subarrays (a.k.a., memory array tiles—MATs) than a second format. In this manner, the data blocks stored in the first format can be accessed with lower latency than the blocks stored in the second format because more data can be read from the array simultaneously. In addition, since the data stored in the second format is stored in fewer subarrays, it takes less energy to read a block stored in the second format. Thus, a system may elect, on a data block by data block basis, whether to conserve power or improve speed.

公开(公告)号：US10388355B1

公开(公告)日：2019-08-20

申请号：US15987884

申请日：2018-05-23

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt

IPC: G11C11/402 ,  G11C5/06 ,  G11C11/409

Abstract: A memory cell within an integrated-circuit memory component receives a first control signal that transitions between supply voltage levels of a first voltage domain and a second control signal that transitions between supply voltage levels of a second voltage domain different from the first voltage domain. In response to the transitions of the first and second control signal, output-enable circuitry within the memory cell transitions an output-enable signal between one of the supply voltage levels of the first voltage domain and one of the supply voltage levels of the second voltage domain to enable output signal generation on an output signal line coupled to the memory cell.