公开(公告)号：US10698159B2

公开(公告)日：2020-06-30

申请号：US16165600

申请日：2018-10-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/136 ,  G02B6/122

Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.

公开(公告)号：US10685847B2

公开(公告)日：2020-06-16

申请号：US15598905

申请日：2017-05-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven Bentley ,  Richard A. Farrell ,  Gerard Schmid ,  Ajey Poovannummoottil Jacob

IPC: H01L21/31 ,  H01L21/311 ,  H01L29/78 ,  H01L29/06 ,  H01L21/308 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L21/8234

Abstract: One illustrative device includes, among other things, at least one fin defined in a semiconductor substrate and a substantially vertical nanowire having an oval-shaped cross-section disposed on a top surface of the at least one fin.

公开(公告)号：US10670804B1

公开(公告)日：2020-06-02

申请号：US16234906

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Abu Thomas ,  Ajey Poovannummoottil Jacob

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136

Abstract: Waveguiding structures and methods of fabricating a waveguiding structure. The waveguiding structure includes a waveguide and an array of semiconductor fins that are arranged at least in part inside the waveguide.

公开(公告)号：US20200166709A1

公开(公告)日：2020-05-28

申请号：US16199811

申请日：2018-11-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/34

Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A grating coupler is formed that has an arrangement of grating structures. A conformal layer is arranged over the plurality of grating structures. The conformal layer is composed of a tunable material having a refractive index that changes with an applied voltage.

公开(公告)号：US10665281B1

公开(公告)日：2020-05-26

申请号：US16286942

申请日：2019-02-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Amogh Agrawal ,  Bipul C. Paul

IPC: G11C11/16 ,  H01L27/22

Abstract: A device is disclosed including a first resistive storage element, a first access transistor having a first terminal coupled to the first resistive storage element at a first node, a second resistive storage element, a second access transistor having a first terminal coupled to the second resistive storage element at a second node, and a write assist transistor having a first terminal coupled to the first node and a second terminal coupled to the second node.

公开(公告)号：US10649245B1

公开(公告)日：2020-05-12

申请号：US16298446

申请日：2019-03-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob ,  Abu Thomas

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator is arranged over a portion of a first waveguide core. The electro-optic modulator may include an electrode, an active layer, a second waveguide core, and a dielectric layer that is arranged between the active layer and the second waveguide core. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied between the electrode and the first waveguide core.

公开(公告)号：US10585219B2

公开(公告)日：2020-03-10

申请号：US16000249

申请日：2018-06-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: G02B6/34 ,  G02B5/18 ,  G02B6/42 ,  G02B6/12 ,  G02B6/293 ,  G02B6/124

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.

公开(公告)号：US10444433B1

公开(公告)日：2019-10-15

申请号：US16170262

申请日：2018-10-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Abu Thomas ,  Ajey Poovannummoottil Jacob ,  Kenneth J. Giewont ,  Karen Nummy ,  Andreas Stricker ,  Bo Peng

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/12

Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A tapered feature composed of a dielectric material is arranged over the waveguide. The tapered feature includes a sidewall that is angled relative to a longitudinal axis of the waveguide.

公开(公告)号：US10429582B1

公开(公告)日：2019-10-01

申请号：US15968997

申请日：2018-05-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob ,  Steven M. Shank

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/136 ,  G02B6/125 ,  G02B6/124 ,  G02B6/12

Abstract: Waveguide-to-waveguide couplers, systems that include waveguide-to-waveguide couplers, and methods of fabricating waveguide-to-waveguide couplers. A first waveguide is coupled to a first waveguide taper, and a second waveguide is coupled to a second waveguide taper. The first waveguide and the first waveguide taper are comprised of silicon, and the second waveguide and the second waveguide taper are comprised of silicon nitride. The second waveguide and the second waveguide taper are arranged in a vertical direction over the first waveguide and the first waveguide taper.

公开(公告)号：US20190259810A1

公开(公告)日：2019-08-22

申请号：US15898562

申请日：2018-02-17

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Jaiswal Akhilesh

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided herein. The integrated circuit includes a plurality of MRAM structures. The integrated circuit further includes a first lower MTJ stack with the first lower MTJ stack including a first lower free layer. The integrated circuit further includes a spin orbit torque coupling layer overlying the first lower MTJ stack. The integrated circuit further includes a first upper MTJ stack overlying the spin orbit torque coupling layer and the first lower MTJ stack with the first upper MTJ stack including a first upper free layer. The switching energy barrier for each of the first lower free layer and the first upper free layer is reduced in the presence of an electrical voltage passing through each of the MTJ stacks. The first lower free layer and said first upper free layer are configured to have complement magnetizations.