APPARATUS AND METHOD FOR FEEDING BACK CHANNEL INFORMATION IN WIRELESS COMMUNICATION SYSTEM
    154.
    发明申请
    APPARATUS AND METHOD FOR FEEDING BACK CHANNEL INFORMATION IN WIRELESS COMMUNICATION SYSTEM 审中-公开
    在无线通信系统中提供反向信道信息的装置和方法

    公开(公告)号:US20160294457A1

    公开(公告)日:2016-10-06

    申请号:US15089397

    申请日:2016-04-01

    CPC classification number: H04B7/0478 H04B7/0452 H04B7/065 H04B7/0663

    Abstract: The present disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as long term evolution (LTE). The present disclosure relates to channel information feedback in a wireless communication system, and an operation method of a receiving node includes: determining compressed channel information based on an eigenvalue decomposition of a covariance matrix regarding a channel, and transmitting, to a transmitting node, a direction index and a magnitude index representing the compressed channel information. Herein, a dimension of the compressed channel information is lower than a dimension of channel information associated with the transmitting node. Also, the disclosure includes other embodiments, different from the above described embodiment.

    Abstract translation: 本公开涉及要提供用于支持超过第四代(4G)通信系统(诸如长期演进(LTE))的更高数据速率的第5代(5G)或5G通信系统。 本公开涉及无线通信系统中的信道信息反馈,并且接收节点的操作方法包括:基于关于信道的协方差矩阵的特征值分解来确定压缩信道信息,并向发送节点发送 方向索引和表示压缩信道信息的幅度索引。 这里,压缩信道信息的维度低于与发送节点相关联的信道信息的维度。 此外,本公开包括与上述实施例不同的其他实施例。

    POWER CONTROL METHOD AND DEVICE FOR FORMING MULTIPLE BEAMS IN WIRELESS COMMUNICATION SYSTEM
    158.
    发明申请
    POWER CONTROL METHOD AND DEVICE FOR FORMING MULTIPLE BEAMS IN WIRELESS COMMUNICATION SYSTEM 审中-公开
    用于在无线通信系统中形成多个波束的功率控制方法和装置

    公开(公告)号:US20150195015A1

    公开(公告)日:2015-07-09

    申请号:US14413308

    申请日:2013-07-19

    CPC classification number: H04B7/043 H04B7/0695 H04W16/28 H04W52/42

    Abstract: The present invention relates to a power control method for transmission beams in a wireless communication system using a beam-forming technique and a device for supporting same. A method of controlling power by a base station according to an embodiment of the present invention includes: determining at least one transmission beam to use for at least one sub carrier; determining an output power gain adjustment value for each of the transmission beams based on information on the transmission beams; and applying the output power gain adjustment value to each of the transmission beams. According to the present invention, if the number of transmission beams varies depending on the situation, there is the effect that it is possible to equally control an output power value irrespective of the number of beams.

    Abstract translation: 本发明涉及一种使用波束形成技术的无线通信系统中的发射波束的功率控制方法及其支持装置。 根据本发明实施例的由基站控制功率的方法包括:确定用于至少一个子载波的至少一个传输波束; 基于关于发射波束的信息确定每个发射波束的输出功率增益调整值; 以及将输出功率增益调整值应用于每个发送波束。 根据本发明,如果发送波束的数量根据情况而变化,则具有可以与波束的数量无关地等同地控制输出功率值的效果。

    Switch and electronic device including the same

    公开(公告)号:US12283446B2

    公开(公告)日:2025-04-22

    申请号:US18077882

    申请日:2022-12-08

    Abstract: A switch in an electronic device includes a substrate, a first signal line, a second signal line, and a ground bridge. The first signal line is on the substrate and extends in a first direction. The second signal line is on the substrate and is spaced apart from the first signal line in a first direction parallel with the first signal line to branch the wireless communication signal at a first point and a second point of the first signal line. The ground bridge is at least partially movable in a space between the first signal line and the second signal line. A first capacitor is between a first point of the first signal line and one end of the second signal line, and a second capacitor is between a second point of the first signal line and the other end of the second signal line.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20240379828A1

    公开(公告)日:2024-11-14

    申请号:US18586833

    申请日:2024-02-26

    Inventor: Taeyoung Kim

    Abstract: In a method of manufacturing a semiconductor device, a ferroelectric layer may be formed on a first region of a substrate, the substrate including the first region and a second region. A gate insulation layer may be formed on and contacting an upper surface of the ferroelectric layer and on an upper surface of the second region of the substrate. A first conductive layer and a second conductive layer may be sequentially stacked on the gate insulation layer. The second conductive layer and the first conductive layer may be patterned to form first and second gate electrode structures on the first and second regions, respectively, of the substrate.

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