公开(公告)号：US11075232B2

公开(公告)日：2021-07-27

申请号：US16522182

申请日：2019-07-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Takashi Hamada ,  Kohei Yokoyama ,  Yasuhiro Jinbo ,  Tetsuji Ishitani ,  Daisuke Kubota

IPC: H01L27/12 ,  H01L51/52 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  H01L29/786 ,  H01L27/32 ,  H01L51/00

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

公开(公告)号：US11074953B2

公开(公告)日：2021-07-27

申请号：US16617919

申请日：2018-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki Kurokawa ,  Shunpei Yamazaki

IPC: G06F9/4401 ,  H01L27/108 ,  G11C11/404 ,  G11C11/16 ,  G06F21/57 ,  G11C11/402 ,  G11C5/14

Abstract: The operation speed of a semiconductor device is improved.
The semiconductor device includes a first memory region and a second memory region; in the semiconductor device, a first memory cell in the first memory region is superior to a second memory cell in the second memory region in data retention characteristics such as a large storage capacitance or a large channel length-channel width ratio (L/W) of a transistor. When the semiconductor device is used as a cache memory or a main memory device of a processor, the first memory region mainly stores a start-up routine and is not used as a work region for arithmetic operation, and the second memory region is used as a work region for arithmetic operation. The first memory region becomes an accessible region when the processor is booted, and the first memory region becomes an inaccessible region when the processor is in normal operation.

公开(公告)号：US20210226060A1

公开(公告)日：2021-07-22

申请号：US17182270

申请日：2021-02-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/10

Abstract: A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including the transistor is provided. A semiconductor device includes a multi-layer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multi-layer film, and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, and the oxide layer contains indium and has a larger energy gap than the oxide semiconductor layer.

公开(公告)号：US11071224B2

公开(公告)日：2021-07-20

申请号：US14922753

申请日：2015-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kohei Yokoyama ,  Yoshiharu Hirakata

IPC: H05K7/02 ,  H01L51/52 ,  G09F9/00 ,  H01L23/10

Abstract: A novel, highly convenient or reliable functional panel is provided. A novel, highly convenient or reliable method for manufacturing a functional panel is provided. The functional panel includes a first base; a second base having a region overlapping with the first base; a bonding layer that bonds the first base to the second base; and an insulating layer in contact with the first base, the second base, and the bonding layer. With this structure, an opening which is formed easily in a region where the bonding layer is in contact with the first base or the second base can be filled with the insulating layer, which can prevent impurities from being diffused into the functional layer located in a region surrounded by the first base, the second base, and the bonding layer that bonds the first base to the second base.

公开(公告)号：US11049974B2

公开(公告)日：2021-06-29

申请号：US16833918

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20210175429A1

公开(公告)日：2021-06-10

申请号：US17178443

申请日：2021-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

IPC: H01L51/00

Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

公开(公告)号：US11031506B2

公开(公告)日：2021-06-08

申请号：US16553287

申请日：2019-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshikazu Ohno ,  Daisuke Yamaguchi ,  Tomonori Nakayama

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/15 ,  H01L29/66

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.

公开(公告)号：US11029572B2

公开(公告)日：2021-06-08

申请号：US16821174

申请日：2020-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kei Takahashi

IPC: G02F1/1362 ,  G02F1/1343

Abstract: To achieve a display device that is suitable for increasing in size and to provide a high-resolution display device. In the display device, three or more adjacent gate lines are supplied with the same selection signal. Three or more pixels that adjoin in the column direction are connected to different source lines. In each of the pixels, a transistor including a semiconductor layer is disposed. An inner source line among three or more source lines is disposed to overlap with a conductive layer that functions as a pixel electrode. Part of the semiconductor layer of the transistor is provided between the outer source line and a source line adjacent to the outer source line.

公开(公告)号：US11024763B2

公开(公告)日：2021-06-01

申请号：US16141187

申请日：2018-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi

IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

公开(公告)号：US20210143352A1

公开(公告)日：2021-05-13

申请号：US17091206

申请日：2020-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takeyoshi WATABE ,  Tomohiro KUBOTA ,  Airi UEDA ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Yuko KUBOTA

IPC: H01L51/50 ,  H01L51/00

Abstract: A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.