公开(公告)号：US11056515B2

公开(公告)日：2021-07-06

申请号：US16816806

申请日：2020-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  G09G3/20 ,  G09G3/3291 ,  H01L29/786 ,  H03K19/003 ,  H03K19/096 ,  G11C19/28 ,  H03K17/16 ,  G09G3/36 ,  G11C19/18 ,  G09G3/3233

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US11006832B2

公开(公告)日：2021-05-18

申请号：US16796077

申请日：2020-02-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: A61B5/00 ,  H04B1/16 ,  G16H40/63 ,  H05K1/11 ,  A61B5/07 ,  G16H40/67 ,  H05K7/00 ,  H01L23/60 ,  H01L23/66 ,  H01L27/13 ,  H04B13/00

Abstract: A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

公开(公告)号：US10944010B2

公开(公告)日：2021-03-09

申请号：US16720151

申请日：2019-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/04 ,  H01L29/24

Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

公开(公告)号：US10742056B2

公开(公告)日：2020-08-11

申请号：US15434832

申请日：2017-02-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: G06F1/32 ,  H02J7/00 ,  H01M10/42

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US10665270B2

公开(公告)日：2020-05-26

申请号：US16354326

申请日：2019-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: G11C11/34 ,  G11C5/10 ,  G11C7/12 ,  G11C11/408 ,  G11C11/4094 ,  G11C11/4097 ,  H01L27/02 ,  H01L27/06 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  G11C7/18

Abstract: An object of one embodiment of the present invention is to propose a memory device in which a period in which data is held is ensured and memory capacity per unit area can be increased. In the memory device of one embodiment of the present invention, bit lines are divided into groups, and word lines are also divided into groups. The word lines assigned to one group are connected to the memory cell connected to the bit lines assigned to the one group. Further, the driving of each group of bit lines is controlled by a dedicated bit line driver circuit of a plurality of bit line driver circuits. In addition, cell arrays are formed on a driver circuit including the above plurality of bit line driver circuits and a word line driver circuit. The driver circuit and the cell arrays overlap each other.

公开(公告)号：US10657882B2

公开(公告)日：2020-05-19

申请号：US16130447

申请日：2018-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/32 ,  G09G3/3208 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/20 ,  H01L27/32

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US10593810B2

公开(公告)日：2020-03-17

申请号：US16555275

申请日：2019-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/02 ,  H01L27/12 ,  H01L21/66

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US10484660B2

公开(公告)日：2019-11-19

申请号：US16010600

申请日：2018-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Mai Akiba

IPC: G06K9/00 ,  H04N13/122 ,  H04N13/139 ,  H04N13/156 ,  H04N13/31 ,  H04N13/341 ,  G06T19/20 ,  G09G3/00 ,  G09G5/00 ,  H04N13/00

Abstract: An image processing method to obtain a high sense of depth or high stereoscopic effect for an image and a display device utilizing the method are provided. Image data of an image is separated into image data of a plurality of objects and a background. A feature amount is obtained from the image data of each object, so that the objects are identified. The relative distance between viewer's eye and any of the objects is determined by the data of the sizes of the objects in the image and the sizes of the objects stored in the database. The image data of each object is processed so that an object with a shorter relative distance is enlarged. The image data of each object after image processing is combined with the image data of the background, so that a sense of depth or stereoscopic effect of an image is increased.

公开(公告)号：US20190156742A1

公开(公告)日：2019-05-23

申请号：US16238633

申请日：2019-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun Koyama ,  Noriko Ishimaru

IPC: G09G3/3233 ,  G09G3/30 ,  G09G5/10

CPC classification number: G09G3/3233 ,  G09G3/2022 ,  G09G3/30 ,  G09G5/10 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/0626 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2330/021 ,  G09G2330/028 ,  G09G2354/00 ,  G09G2360/14 ,  G09G2360/144 ,  G09G2360/145

Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.

公开(公告)号：US10290742B2

公开(公告)日：2019-05-14

申请号：US15728591

申请日：2017-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66 ,  H01L29/49

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.