公开(公告)号：US07041542B2

公开(公告)日：2006-05-09

申请号：US10754559

申请日：2004-01-12

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/338

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a dummy gate over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the dummy gate to form a trench in the dielectric layer and forming a metal gate in the trench.

Abstract translation: 形成鳍状场效应晶体管的方法包括形成鳍片并形成与鳍片的第一端相邻的源极区域和与鳍片的第二端部相邻的漏极区域。 该方法还包括在鳍上方形成虚拟栅极，并在虚拟栅极周围形成电介质层。 该方法还包括去除伪栅极以在电介质层中形成沟槽并在沟槽中形成金属栅极。

公开(公告)号：US20050272105A1

公开(公告)日：2005-12-08

申请号：US10888530

申请日：2004-07-09

Applicant: Kalle Levon ,  Bin Yu ,  Yanxiu Zhou

Inventor： Kalle Levon ,  Bin Yu ,  Yanxiu Zhou

IPC: A61F13/15 ,  C12M1/34 ,  C12Q1/00 ,  G01N20060101 ,  G01N33/543 ,  G01N33/552 ,  G01N33/554 ,  G01N33/569

CPC classification number: C12Q1/00 ,  C07K9/00 ,  C07K14/32 ,  C07K17/00 ,  C12Q1/003 ,  G01N33/53 ,  G01N33/54353 ,  G01N33/5438 ,  G01N33/54393 ,  G01N33/552

Abstract: A real-time, portable peptide-containing potentiometric biosensor that can directly identify bacterial spores. Two peptides for specific recognition of B. subtilis and B. anthracis Sterne may be immobilized by a polysiloxane monolayer immobilization (PMI) technique. The sensors translate the biological recognition event into a potential change by detecting, for example, B. subtilis spores in a concentration range of 0.08-7.3×104 CFU/ml. The sensor exhibited highly selective recognition properties towards Bacillus subtilis spores over other kinds of spores. The selectivity coefficients of the sensors for other kinds of spores are in the range of 0-1.0×10−5. The biosensor system not only has the specificity to distinguish Bacillus subtilis spores in a mixture of B. subtilis and B. thuringiensis (thur.) Kurstaki spores, but also can discriminate between live and dead B. subtilis spores. Furthermore, the sensor can distinguish a Bacillus subtilis 1A700 from other B. subtilis strain. Assay time may be as low as about 5 minutes for a single test. Rapid identification of B. anthracis Sterne and B. anthracis ΔAmes was also provided.

Abstract translation: 一种可直接鉴定细菌孢子的实时便携式含肽电位生物传感器。 用于特异性识别枯草芽孢杆菌和炭疽芽孢杆菌的两种肽可以通过聚硅氧烷单层固定（PMI）技术来固定。 传感器通过检测例如浓度范围为0.08-7.3×10 4 CFU / ml的枯草芽孢杆菌孢子将生物识别事件转化为潜在的变化。 传感器表现出对枯草芽孢杆菌孢子与其他种类孢子的高选择性识别性能。 用于其他种类孢子的传感器的选择性系数在0-1.0×10 -5的范围内。 生物传感器系统不仅具有将枯草芽孢杆菌和苏云金芽孢杆菌（thur。）Kurstaki孢子的混合物中的枯草芽孢杆菌孢子区分开的特异性，而且可以区分活枯枯病芽孢杆菌孢子和活枯草芽孢杆菌孢子。 此外，传感器可以将枯草芽孢杆菌1A700与其他枯草芽孢杆菌菌株区分开来。 单次测试的测定时间可能低至约5分钟。 炭疽杆菌和炭疽杆菌的快速鉴定也提供了DeltaAmes。

公开(公告)号：US06967175B1

公开(公告)日：2005-11-22

申请号：US10726619

申请日：2003-12-04

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/302 ,  H01L21/336 ,  H01L21/461 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/66818 ,  Y10S438/933

Abstract: A method of manufacturing a semiconductor device may include forming a fin on an insulator and forming a gate oxide on sides of the fin. The method may also include forming a gate structure over the fin and the gate oxide and forming a dielectric layer adjacent the gate structure. Material in the gate structure may be removed to define a gate recess. A width of a portion of the fin below the gate recess may be reduced, and a metal gate may be formed in the gate recess.

Abstract translation: 半导体器件的制造方法可以包括在绝缘体上形成翅片并在鳍的侧面形成栅极氧化物。 该方法还可以包括在鳍片和栅极氧化物上形成栅极结构，并形成与栅极结构相邻的电介质层。 可以去除栅极结构中的材料以限定栅极凹部。 可以减小栅极凹部下方的鳍的一部分的宽度，并且可以在栅极凹部中形成金属栅极。

公开(公告)号：US06960804B1

公开(公告)日：2005-11-01

申请号：US10633034

申请日：2003-10-10

Applicant: Chih-Yuh Yang ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Bin Yu

Inventor： Chih-Yuh Yang ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Bin Yu

IPC: H01L21/027 ,  H01L21/336 ,  H01L29/786 ,  H01L29/788

CPC classification number: H01L29/785 ,  H01L21/0276 ,  H01L29/42392 ,  H01L29/66795

Abstract: A double-semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The gate is formed on the insulating layer and surrounds the top surface, bottom surface and the side surfaces of the fin in the channel region of the semiconductor device. Surrounding the fin with gate material results in an increased total channel width and more flexible device adjustment margins.

Abstract translation: 双半导体器件包括衬底，绝缘层，鳍和栅极。 绝缘层形成在基板上，并且鳍形成在绝缘层上。 翅片具有多个侧表面，顶表面和底表面。 栅极形成在绝缘层上并且围绕半导体器件的沟道区域中的鳍的顶表面，底表面和侧表面。 用门材料围绕翅片会导致总通道宽度增加和设备调整裕度更灵活。

公开(公告)号：US06921963B2

公开(公告)日：2005-07-26

申请号：US10830006

申请日：2004-04-23

Applicant: Zoran Krivokapic ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Haihong Wang ,  Bin Yu

Inventor： Zoran Krivokapic ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66818 ,  H01L29/78687

Abstract: A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.

Abstract translation: 这里描述了窄通道FinFET，其具有窄的通道宽度。 可以在窄通道上形成保护层，保护层比窄通道宽。

公开(公告)号：US06919561B2

公开(公告)日：2005-07-19

申请号：US10775857

申请日：2004-02-09

Applicant: Chih-Kung Lee ,  Liang-Bin Yu ,  Chyan-Chyi Wu ,  Shu-Sheng Lee ,  Wen-Jong Wu ,  Ming-Hua Wen ,  Shih-Jui Chen ,  Giin-Yuan Wu

Inventor： Chih-Kung Lee ,  Liang-Bin Yu ,  Chyan-Chyi Wu ,  Shu-Sheng Lee ,  Wen-Jong Wu ,  Ming-Hua Wen ,  Shih-Jui Chen ,  Giin-Yuan Wu

IPC: G01D5/38 ,  H01J3/14 ,  H01J5/16 ,  H01J40/14

CPC classification number: G01D5/38

Abstract: A diffraction laser encoder apparatus for positional and movement information measurement of a target made with a diffraction grating. The diffraction laser encoder has a laser light source for generating a source beam. A polarization beam splitter assembly comprises a polarization beam splitter for receiving the source beam for splitting a P-polarization component and an S-polarization component of the source beam into parallel and offset beams. A focusing lens focuses the P-polarization component and the S-polarization component beams onto the target diffraction grating and returning diffracted P-polarization and diffracted S-polarization beams back into the polarization beam splitter for generating a detector beam coaxially containing the diffracted P-polarization and the diffracted S-polarization beams. A detector assembly receives the detector beam for electrical processing and analysis for resolving the positional and movement information. In the process, phase information contained in the diffraction signal returned by the target is analyzed.

Abstract translation: 一种用衍射光栅制作的靶的位置和运动信息测量的衍射激光编码器装置。 衍射激光编码器具有用于产生源光束的激光光源。 偏振分束器组件包括偏振分束器，用于接收源光束，用于将源极光束的P偏振分量和S偏振分量分离成平行和偏移光束。 聚焦透镜将P偏振分量和S偏振分量光束聚焦到目标衍射光栅上，并将衍射的P偏振和衍射S偏振光束返回到偏振分束器中，以产生同轴地包含衍射P- 偏振和衍射S偏振光束。 检测器组件接收用于电处理和分析的检测器束，用于解析位置和运动信息。 在该过程中，分析由目标返回的衍射信号中包含的相位信息。

公开(公告)号：US20050153485A1

公开(公告)日：2005-07-14

申请号：US10754540

申请日：2004-01-12

Applicant: Shibly Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/335

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.

Abstract translation: 形成鳍状场效应晶体管的方法包括：在鳍片的第一端上形成翅片并形成源极区域，在鳍片的第二端部形成漏极区域。 该方法还包括在鳍上形成具有第一图案的第一半导体材料的虚拟栅极，并在虚拟栅极周围形成介电层。 该方法还包括去除第一半导体材料以在对应于第一图案的电介质层中留下沟槽，使在沟槽内暴露的鳍片的一部分变薄，并在沟槽内形成金属栅极。

公开(公告)号：US20050121716A1

公开(公告)日：2005-06-09

申请号：US10726508

申请日：2003-12-04

Applicant: Wiley Hill ,  Haihong Wang ,  Yider Wu ,  Bin Yu

Inventor： Wiley Hill ,  Haihong Wang ,  Yider Wu ,  Bin Yu

IPC: G11C16/04 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC classification number: H01L21/28273 ,  H01L27/115 ,  H01L27/11556 ,  H01L29/785

Abstract: A memory device includes a conductive structure, a number of dielectric layers and a control gate. The dielectric layers are formed around the conductive structure and the control gate is formed over the dielectric layers. A portion of the conductive structure functions as a drain region for the memory device and at least one of the dielectric layers functions as a charge storage structure for the memory device. The dielectric layers may include oxide-nitride-oxide layers.

Abstract translation: 存储器件包括导电结构，多个电介质层和控制栅极。 电介质层形成在导电结构周围，并且控制栅极形成在电介质层上。 导电结构的一部分用作存储器件的漏极区，并且至少一个介电层用作存储器件的电荷存储结构。 电介质层可以包括氧化物 - 氮化物 - 氧化物层。

公开(公告)号：US06894355B1

公开(公告)日：2005-05-17

申请号：US10044493

申请日：2002-01-11

Applicant: Bin Yu ,  Olov Karlsson

Inventor： Bin Yu ,  Olov Karlsson

IPC: H01L21/28 ,  H01L27/01

CPC classification number: H01L21/28291

Abstract: A semiconductor device and method of manufacture. The semiconductor device having a silicide source and a silicide drain; a semiconductor body disposed between the source and the drain; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.

Abstract translation: 半导体器件及其制造方法。 具有硅化物源和硅化物漏极的半导体器件; 设置在源极和漏极之间的半导体本体; 栅电极，其设置在所述主体上并且限定插入在所述源极和所述漏极之间的沟道; 以及由高K材料制成并分离栅电极和主体的栅极电介质。

公开(公告)号：US20050073022A1

公开(公告)日：2005-04-07

申请号：US10642916

申请日：2003-08-18

Applicant: Olov Karlsson ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic ,  Qi Xiang

Inventor： Olov Karlsson ,  HaiHong Wang ,  Bin Yu ,  Zoran Krivokapic ,  Qi Xiang

IPC: H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/00

CPC classification number: H01L29/7842 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78654

Abstract: A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.

Abstract translation: 形成在半导体材料层中的浅沟槽隔离区。 浅沟槽隔离区域包括形成在半导体材料层中的沟槽，沟槽由侧壁和底部限定; 由高K材料形成的沟槽内的衬垫，衬垫符合沟槽的侧壁和底部; 以及由隔离材料制成并填充并符合高K衬里的填充部分。 还公开了形成浅沟槽隔离区域的方法。