Abstract:
A wideband monopole antenna assembly includes a substrate having an antenna connector, a wideband monopole antenna positioned on the substrate, and a feeder unit positioned on the rear surface of the substrate for supporting the antenna with a part thereof bent at a predetermined angle. The wideband monopole antenna has a feeder portion shorter than conventional antennas for compactness of the antenna.
Abstract:
A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
Abstract:
A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
Abstract:
A method and an apparatus for indirectly simulating a semiconductor integrated circuit (IC) are described. A circle chain is formed using input pins and output pins to provide an intellectual property (IP) core model that substitutes for a real IP core circuit. A test bench for the IP core model is generated, the semiconductor IC that includes the IP core model is integrated using the generated test bench, and the semiconductor IC is simulated.
Abstract:
A single wavelength bi-directional RoF link apparatus for signal transmission in a TDD wireless system includes a main donor for receiving an RF signal of downstream data from an upper layer, electrooptic converting the received RF signal to an optical signal, and transmitting the converted optical signal via an optical fiber in response to a TDD switching signal received from the upper layer, or receiving an optical signal of upstream data via the optical fiber, opto-electric converting the received optical signal to an RF signal in response to the TDD switching signal received from the upper layer, and transmitting the converted optical signal to the main donor; and a remote for receiving the optical signal of the downstream data via the optical fiber from the main donor, opto-electric converting the received optical signal to an RF signal, and emitting the converted RF signal to a terminal via an antenna in response to a TDD switching signal generated by a switch timing signal generation circuit, or receiving an RF signal of upstream data from the terminal, electro-optic converting the received RF signal to an optical signal in response to the TDD switching signal generated by the switch timing signal generation circuit, and transmitting the converted optical signal to the main donor via the optical fiber.
Abstract:
A wideband optical module includes a downward wideband light source for generating downward light, an upward wideband light source for generating upward light, a first circulator including a first to a third port for outputting multiplexed downward optical signals to the second port and for outputting multiplexed upward optical signals to the first port, a second circulator including a first to a third port for outputting multiplexed upward optical signals to the second port and for outputting multiplexed downward optical signals to the first port, a first optical coupler connected to the third port of the first circulator and the second port of the second circulator for outputting the downward light to the third port of the first circulator, and a second optical coupler connected to the second port of the first circulator and the third port of the second circulator for outputting the upward light to the third port of the second circulator.
Abstract:
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
Abstract:
A method for controlling optical transmitters in a Wavelength Division Multiplexed (WDM)-Passive Optical Network (PON) system includes the steps of: determining the existence of an upward optical signal to control an optical transmitter provided for each corresponding Optical Node Terminal (ONT) to be turned on/off in an Optical Line Termination (OLT); and monitoring the state of a transmission buffer within an Ethernet switch to control a corresponding optical transmitter to be turned on/off in accordance with the state of the transmission buffer in each of the ONTs.
Abstract:
Disclosed is a radio-over-fiber (ROF) system for supporting various services, the system comprising: a central access platform (CAP) for providing time division duplexing (TDD), frequency division duplexing (FDD), and broadcasting services, converting a TDD downward signal and FDD/broadcasting downward signals into optical signals, respectively, transmitting the converted optical signals to a remote access unit (RAU), converting a TDD upward signal and an FDD upward signal, which have been transmitted as optical signals from the RAU, into electric signals, respectively, and using an optical circulator in order to separate upward and downward signals from each other; and the RAU for converting the TDD downward signal and FDD/broadcasting downward signals transmitted from the CAP into electric signals, respectively, converting the TDD upward signal and FDD upward signal to be transmitted to the CAP into optical signals, respectively, and using an optical circulator in order to separate upward and downward signals from each other, wherein the RAU includes a plurality of signal filtering/separating/combining units, which wirelessly emit the TDD downward signal and FDD/broadcasting downward signals, having been converted into electric signals, through an antenna, and which separate wirelessly-received TDD upward signal and FDD upward signal from each other.
Abstract:
A method of detecting a change in a broadcasting table indicating broadcasting information from cyclic redundancy check (CRC) data of section information of a broadcasting stream. The method includes: storing section information of a broadcasting stream including a version number, a section number, table information, and cyclic redundancy check data; comparing cyclic redundancy check data of first input table information in the section number of the broadcasting stream with cyclic redundancy check data of subsequent input table information in the section number of the broadcasting stream; and parsing and updating the table information if the cyclic redundancy check data is changed.