公开(公告)号：US07993808B2

公开(公告)日：2011-08-09

申请号：US11324588

申请日：2006-01-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract translation: 在浸渍光刻工艺期间设置在光敏层上的涂层材料包括基本上不溶于浸没流体的聚合物和能够从光敏层中和碱猝灭剂的酸。

公开(公告)号：US20110008956A1

公开(公告)日：2011-01-13

申请号：US12610282

申请日：2009-10-31

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US20100099267A1

公开(公告)日：2010-04-22

申请号：US12254658

申请日：2008-10-20

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: H01L21/31 ,  C23C16/00

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

公开(公告)号：US20100068874A1

公开(公告)日：2010-03-18

申请号：US12560164

申请日：2009-09-15

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/28 ,  H01L21/306

CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US07611825B2

公开(公告)日：2009-11-03

申请号：US10942499

申请日：2004-09-15

Applicant: Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

Inventor： Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

IPC: G03F7/00

CPC classification number: G03F7/091 ,  G03F7/11

Abstract: A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

Abstract translation: 一种方法包括在衬底上形成BARC层，处理BARC层使其表面具有亲水性，在经处理的BARC层上形成光致抗蚀剂层，将光致抗蚀剂层暴露于预定图案，并显影光致抗蚀剂层以形成图案化的光致抗蚀剂。

公开(公告)号：US07435512B2

公开(公告)日：2008-10-14

申请号：US10894924

申请日：2004-07-20

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

公开(公告)号：US20080106710A1

公开(公告)日：2008-05-08

申请号：US11670860

申请日：2007-02-02

Applicant: Burn Jeng Lin ,  Ching-Yu Chang

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52

CPC classification number: G03B27/52 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没式光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

公开(公告)号：US20080002164A1

公开(公告)日：2008-01-03

申请号：US11697469

申请日：2007-04-06

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/00 ,  B08B3/12

CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

公开(公告)号：US07125741B2

公开(公告)日：2006-10-24

申请号：US10720735

申请日：2003-11-24

Applicant: Yu-Lin Yen ,  Ching-Yu Chang

Inventor： Yu-Lin Yen ,  Ching-Yu Chang

IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/0276 ,  H01L21/0332 ,  Y10S438/952

Abstract: A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.

Abstract translation: 提供了图案化光刻胶层的返工工艺。 首先，在衬底上依次形成有第一DARC，第一底漆和第一图案化的光致抗蚀剂层。 接下来，从第一DARC去除第一图案化的光致抗蚀剂层和第一底漆。 之后，在第一个DARC上形成第二个DARC; 在第二个DARC上形成第二个引物。 最后，在第二底漆上形成第二图案的光致抗蚀剂层。

公开(公告)号：US07097945B2

公开(公告)日：2006-08-29

申请号：US10249559

申请日：2003-04-18

Applicant: Ching-Yu Chang ,  Hsin-huei Chen ,  Meng-Wei Chen

Inventor： Ching-Yu Chang ,  Hsin-huei Chen ,  Meng-Wei Chen

IPC: G03F1/00 ,  H01L21/302

CPC classification number: G03F1/70

Abstract: A method of reducing a critical dimension (“CD”) bias between a dense pattern and an isolation pattern is disclosed. The method includes a first step of providing a mask having a dense pattern, an isolation pattern and the other area of the mask is transparent, in which mask the dense pattern has a first opaque pattern and the isolation pattern has a second opaque pattern. The second step of the method is forming a virtual pattern around the isolation pattern, in which a distance between the virtual pattern and the isolation pattern is y, and the virtual pattern has a pattern line width x. By forming the virtual pattern around the isolation pattern, the flare effect of the isolation pattern is close to that of the dense pattern, thus the CD bias between a dense pattern, and an isolation pattern is reduced, and the process window does not shrink.

Abstract translation: 公开了一种降低致密图案和隔离图案之间的临界尺寸（“CD”）偏压的方法。 该方法包括提供具有致密图案的掩模，隔离图案和掩模的另一区域是透明的第一步骤，其中密集图案具有第一不透明图案，并且隔离图案具有第二不透明图案。 该方法的第二步是在隔离图案周围形成虚拟图案，其中虚拟图案和隔离图案之间的距离为y，虚拟图案具有图案线宽度x。 通过在隔离图案周围形成虚拟图案，隔离图案的耀斑效应接近密集图案的闪光效果，因此减小密集图案和隔离图案之间的CD偏差，并且处理窗口不缩小。