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    PULSE OUTPUT CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE
    161.
    发明申请
    PULSE OUTPUT CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
    脉冲输出电路，显示装置和电子装置

    公开(公告)号：US20140023173A1

    公开(公告)日：2014-01-23

    申请号：US13937559

    申请日：2013-07-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki MIYAKE

    IPC: G11C19/18

    CPC classification number: G11C19/188 ,  G09G2310/0286 ,  G11C19/184 ,  G11C19/28

    Abstract: An object is to suppress the stress applied to a transistor as well as suppressing generation of defective operation. In a pulse output circuit having a function of outputting a pulse signal and including a transistor that controls whether to set the pulse signal to high level, in a period during which the pulse signal output from the pulse output circuit is at low level, the potential of a gate of a transistor is not set to a constant value but intermittently set to a value higher than the potential VSS. Accordingly, the stress to the transistor can be suppressed.

    Abstract translation: 目的是抑制施加到晶体管的应力以及抑制不良操作的产生。 在具有输出脉冲信号并且包括控制是否将脉冲信号设定为高电平的晶体管的脉冲输出电路中，在从脉冲输出电路输出的脉冲信号为低电平的期间，电位 晶体管的栅极不被设置为恒定值，而是间断地设置为高于电位VSS的值。 因此，可以抑制对晶体管的应力。

    PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE
    162.
    发明申请
    PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE 有权
    脉冲输出电路和半导体器件

    公开(公告)号：US20140002426A1

    公开(公告)日：2014-01-02

    申请号：US13922685

    申请日：2013-06-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshifumi TANADA ,  Manabu SATO ,  Hiroyuki MIYAKE ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

    IPC: H03K3/01

    CPC classification number: H03K3/01 ,  G09G3/3688 ,  G11C19/28

    Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor. One of a source and a drain of the sixth transistor is connected to the drain of the first transistor, and the other of the source and the drain of the sixth transistor is connected to the gate of the third transistor. The first transistor and the third transistor include back gates connected to each other. The first to sixth transistors have the same conductivity type.

    Abstract translation: 提供了一种高可靠性的半导体器件，其中可以抑制由于劣化导致的晶体管的阈值电压偏移。 脉冲输出电路包括第一晶体管，第二晶体管，第三晶体管，第四晶体管，第五晶体管和第六晶体管。 时钟信号被提供给第一晶体管的漏极。 第一电源电位施加到第二晶体管的源极，第二晶体管的漏极连接到第一晶体管的漏极。 第二电源电位被施加到第三晶体管的漏极。 第一电源电位被施加到第四晶体管的源极，并且第四晶体管的漏极连接到第三晶体管的漏极。 第一电源电位施加到第五晶体管的源极，第五晶体管的漏极连接到第三晶体管的栅极。 第六晶体管的源极和漏极之一连接到第一晶体管的漏极，第六晶体管的源极和漏极中的另一个连接到第三晶体管的栅极。 第一晶体管和第三晶体管包括彼此连接的后栅极。 第一至第六晶体管具有相同的导电类型。

    METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE
    165.
    发明申请
    METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE 有权

    公开(公告)号：US20250014532A1

    公开(公告)日：2025-01-09

    申请号：US18776588

    申请日：2024-07-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

    IPC: G09G3/36 ,  G02F1/1345 ,  G06F3/042 ,  G06F3/044

    Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

    SEMICONDUCTOR DEVICE
    170.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240113130A1

    公开(公告)日：2024-04-04

    申请号：US18526407

    申请日：2023-12-01

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

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