摘要:
A wafer storing, closed container for use in a clean room of a semiconductor manufacturing system is provided with an attached inert gas tank so as to eliminate the need to convey the container to an inert gas purge station to supplement the inert gas supply in the container due to leakage. A gas passageway is formed in a body of the container in such a manner that one end thereof is open inside the container. The other end is open outside the container. The portable inert gas tank is detachably connected to the other end of the gas passageway so as to automatically supplement the container with the inert gas.
摘要:
A display control system for controlling display of images on a plurality of display units, the plurality of display units being arranged in an array, includes a determining unit determining whether or not information of interest is being displayed; a first recording control unit controlling recording of a first image displayed on the display units when the determining unit determines that the information of interest is being displayed; a second recording control unit controlling recording of a second image displayed on the display units when a user performs a recording operation; and a display control unit controlling display of the first image or the second image on the display units.
摘要:
A method of controlling a virtual computer system, the method comprising: obtaining, by a management computer, a load value for each of the plurality of groups, and comparing the load value against a preset threshold; identifying, a group whose load value exceeds the preset threshold as a first group; selecting, a second group from the plurality of groups minus the first group; identifying, as a migration target computer, a given physical computer out of physical computers that run virtual computers allocated to the second group; migrating, virtual computers that are provided by the migration target computer to other physical computers within the second group; changing, settings of the network switch in a manner that enables the migration target computer to operate in the first group; adding, the migration target computer to the first group; and controlling, the migration target computer to run virtual computers of the first group.
摘要:
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要:
A 1,3,5-triazine derivative represented by formula (1): wherein R1 is hydrogen, C1-4 alkyl group or substituted or unsubstituted phenyl group; n is an integer of 1-3, Ar is a substituted or unsubstituted aromatic hydrocarbon group, provided that Ar is different from two substituted quarterarylenyl groups bonded to the 1,3,5-triazine ring; and V and Y are nitrogen or carbon, provided that a case where both of V and Y are carbon atoms is excluded. The organic electroluminescent device comprising the 1,3,5-triazine derivative as an electron transport material has a long lifetime.
摘要:
A reconfigurable vehicle user interface system is presented. A vehicle user interface has a touch sensitive input devices such as touchpads and a touch screen that have specific function commands mapped to them. A user can select which function commands are mapped to which portions of the touch screen. This allows a user to customize the steering wheel function commands.
摘要:
Disclosed is an image signal generating apparatus that includes a video information obtaining unit that obtains a plurality of video information, a characteristic information obtaining unit that obtains a plurality of predetermined characteristic information from each of the plurality of video information obtained by the video information obtaining unit, and a sorting unit that changes an order of displaying the plurality of the video information based on each of the plurality of characteristic information obtained from the characteristic information obtaining unit. The image signal generating apparatus further includes a display image signal generating unit that generates a video signal to display the plurality of video information based on information obtained, as a result of changing the order of displaying the plurality of the video information, from the sorting unit.
摘要:
A motor driving circuit includes a three-phase inverter circuit 8, including three upper-arm switching elements 56a to 56c for driving upper arms of different phases of a three-phase motor 3, and three lower-arm switching elements 56d to 56f for driving lower arms of different phases. At least one of the upper-arm switching elements 56a to 56c and the lower-arm switching elements 56d to 56f is a semiconductor element that performs a diode operation. The diode operation is an operation in which a voltage less than or equal to a threshold voltage of a gate electrode G is applied to the gate electrode G with reference to a potential of a first ohmic electrode S, thereby conducting a current flow from the first ohmic electrode S to a second ohmic electrode D and blocking a current flow from the second ohmic electrode D to the first ohmic electrode S.
摘要:
A cyclic azine compound represented by general formula (1): wherein each Ar1 represents an aromatic group, which is unsubstituted or substituted by a C1-4 alkyl group, a phenyl group or a pyridyl group; and A represents a group selected from those which are represented by general formulae (2) to (5), described in the description. The cyclic azine compound is useful for an organic compound layer of fluorescent or phosphorescent EL device.
摘要:
A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.