公开(公告)号：US20230098393A1

公开(公告)日：2023-03-30

申请号：US17847231

申请日：2022-06-23

Applicant: Richtek Technology Corporation

Inventor： Hao-Lin Yen ,  Heng-Chi Huang ,  Yong-Zhong Hu

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

Abstract: A lead frame includes: at least one ductile structure, including a bond area, a die paddle, or a lead finger; and at least one sacrificial structure, connected between a corresponding ductile structure and a corresponding near portion in the lead frame, wherein the near portion is a portion of the lead frame close to the ductile structure.

公开(公告)号：US20230090794A1

公开(公告)日：2023-03-23

申请号：US17512896

申请日：2021-10-28

Applicant: Richtek Technology Corporation

Inventor： Tsung-Han YANG ,  Yen-Chih WANG ,  Ming-Jun HSIAO ,  Tsung-Nan WU

IPC: H02K33/04 ,  H02P25/06 ,  H02P6/00

Abstract: An electronic device for controlling an LRA (Linear Resonant Actuator) includes a signal generator, a driver, a delay unit, a sensor, and a DSP (Digital Signal Processor). The signal generator generates a digital signal. The driver drives the LRA according to the digital signal. The delay unit delays the digital signal for a predetermined time, so as to generate an estimated voltage signal. The sensor detects the current flowing through the LRA, so as to generate a sensing current signal. The DSP controls the resonant frequency or the gain value of the signal generator according to the estimated voltage signal and the sensing current signal.

公开(公告)号：US20230045843A1

公开(公告)日：2023-02-16

申请号：US17749071

申请日：2022-05-19

Applicant: Richtek Technology Corporation

Inventor： Yu-Ting Yeh ,  Kuo-Hsuan Lo ,  Chien-Hao Huang ,  Chu-Feng Chen ,  Wu-Te Weng

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3105 ,  H01L21/765 ,  H01L29/66

Abstract: A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a field oxide region, and a self-aligned drift region. The field oxide region is formed on an upper surface of the semiconductor layer, wherein the field oxide region is located between the gate and the drain. The field oxide region is formed by steps including a chemical mechanical polish (CMP) process step. The self-aligned drift region is formed in the semiconductor layer, wherein the self-aligned drift region is entirely located vertically below and in contact with the field oxide region.

公开(公告)号：US20230028873A1

公开(公告)日：2023-01-26

申请号：US17838195

申请日：2022-06-11

Applicant: Richtek Technology Corporation

Inventor： Kuo-Chi Liu ,  Ta-Yung Yang ,  Chung-Lung Pai

IPC: H02M3/07 ,  H02M1/00

Abstract: A switched capacitor voltage converter circuit includes: a switched capacitor converter and a control circuit; wherein the control circuit adjusts operation frequencies and/or duty ratios of operation signals which control switches of the switched capacitor converter, so as to adjust a ratio of a first voltage to a second voltage to a predetermined ratio. When the control circuit decreases the duty ratios of the operation signals, if a part of the switches of the switched capacitor converter are turned ON, an inductor current flowing toward the second voltage is in a first state; if the inductor current continues to flow via a current freewheeling path, the inductor current flowing toward the second voltage becomes in a second state. A corresponding inductor is thereby switched between the first state and the second state to perform inductive power conversion.

公开(公告)号：US11545909B2

公开(公告)日：2023-01-03

申请号：US17359336

申请日：2021-06-25

Applicant: Richtek Technology Corporation

Inventor： Tzu-Chen Lin

IPC: H02M3/335 ,  H02M1/34 ,  H02M1/00

Abstract: A flyback power converter includes: a power transformer, a primary side control circuit, a secondary side control circuit, and an active clamp snubber including a snubber switch and a control signal generation circuit. The control signal generation circuit controls the snubber switch to be conductive during a soft switching period in an OFF period of a primary side switch within a switching period of the switching signal, whereby the primary side switch achieves soft switching. A starting time point of the soft switching period is determined by a current threshold, so that a secondary side current is not lower than the current threshold at the starting time point, whereby the secondary side control circuit keeps the SR switch conductive at the starting time point. The secondary side control circuit turns OFF the SR switch when the secondary side current is lower than the current threshold.

公开(公告)号：US20220406693A1

公开(公告)日：2022-12-22

申请号：US17736445

申请日：2022-05-04

Applicant: Richtek Technology Corporation

Inventor： Lung-Sheng Lin ,  Chih-Feng Huang

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: An intelligent power module includes: an encapsulating material structure; a lead frame which is at least partially encapsulated inside the encapsulating material structure, wherein all portions of the lead frame encapsulated inside the encapsulating material structure are at a same planar level; and a heat dissipation structure, which is connected to the lead frame.

公开(公告)号：US20220361777A1

公开(公告)日：2022-11-17

申请号：US17665269

申请日：2022-02-04

Applicant: RichHealth Technology Corporation ,  Richtek Technology Corporation

Inventor： Jung-Tang Huang ,  Kuan-Ting Lee ,  Dahong Qian

IPC: A61B5/145 ,  A61B5/15 ,  A61B5/1486 ,  A61B5/00

Abstract: Provided is a transdermal microneedle array patch, including: a bottom cover; a top cover; a substrate disposed within the top cover; and a first probe and a second probe disposed between the bottom cover and the top cover and electrically connected the substrate. The first and second probes form an open circuit. While the bottom cover is combined with the top cover to form the transdermal microneedle array patch, the first and second probes form a closed circuit.

公开(公告)号：US11496105B2

公开(公告)日：2022-11-08

申请号：US17491578

申请日：2021-10-01

Applicant: Richtek Technology Corporation

Inventor： Min-Hung Hu

IPC: H03F3/45

Abstract: A multi-stage amplifier circuit includes a pre-stage amplifier circuit and a floating control circuit. The pre-stage amplifier circuit amplifies a voltage difference between its input terminals, to generate plural pre-stage transconductance currents flowing through corresponding plural pre-stage transconductance nodes. The floating control circuit includes: a floating reference transistor configured as a source follower and a floating amplifier. The floating amplifier and the floating reference transistor are coupled to form feedback control and to generate an upper driving signal and a lower driving signal according to a floating reference level in the floating control circuit. The upper driving signal is higher than the lower driving signal with a predetermined voltage difference. The floating control circuit is electrically connected to the plural pre-stage transconductance nodes and is floating in common mode relative to the pre-stage transconductance nodes.

公开(公告)号：US20220336441A1

公开(公告)日：2022-10-20

申请号：US17702702

申请日：2022-03-23

Applicant: Richtek Technology Corporation

Inventor： Kuo-Chin Chiu ,  Chien-Wei Chiu

IPC: H01L27/02 ,  H01L21/8234

Abstract: A high voltage device is used as a lower switch in a power stage of a switching regulator. The high voltage device includes at least one lateral diffused metal oxide semiconductor (LDMOS) device, a first isolation region, a second isolation region, a third isolation region, and a current limiting device. The first isolation region is located in a semiconductor layer, and encloses the LDMOS device. The second isolation region has a first conductivity type, and encloses the first isolation region in the semiconductor layer. The third isolation region has a second conductivity type, and encloses the second isolation region in the semiconductor layer. The current limiting device is electrically connected to the second isolation region, and is configured to operably suppress a parasitic silicon controlled rectifier (SCR) from being turned on.

公开(公告)号：US20220299670A1

公开(公告)日：2022-09-22

申请号：US17681722

申请日：2022-02-26

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Shang-Te Yang ,  Ming-Jun Hsiao

IPC: G01V3/08

Abstract: A foreign object detection method for detecting whether a foreign object exists on a function pin of a power supplier side or a power receiver side, wherein the power supplier side and the power receiver side are coupled to each other in a detachable fashion. The foreign object detection method includes: discharging a capacitor via the function pin, wherein the capacitor is electrically connected to the function pin; providing a sensing current flowing through the function pin, to charge the capacitor; sensing a voltage variation of the function pin during a predetermined period; and comparing the voltage variation with a predetermined variation, so as to determine whether a foreign object exists on the function pin.