Method for manufacture of ceftiofur
    171.
    发明申请
    Method for manufacture of ceftiofur 审中-公开
    头孢噻呋的制造方法

    公开(公告)号:US20080207912A1

    公开(公告)日:2008-08-28

    申请号:US12150744

    申请日:2008-04-30

    CPC classification number: C07D417/14

    Abstract: A process for preparation of ceftiofur of formula (I) of high purity and substantially free from impurities is disclosed. The process comprises reacting [2-(2-aminothiazol-4-yl)]-2-syn-methoxyimino acetic acid-2-benzothiazolyl thioester of formula (II), with 7-amino-3-(2-furanylcarbonylthiomethyl)-3-cephem-4-carboxylic acid of formula (III) in the presence of a mixture of an water-immescible inert organic solvent and water and in the presence of a organic base and isolating ceftiofur of formula (1) substantially free of impurities by, d) adding water to the reaction mixture and selectively partitioning the impurities in the organic phase and ceftiofur (I) in the form of a salt with the base in the aqueous phase, e) acidifying the aqueous phase containing ceftiofur (I) in the form of a salt with the base in the presence of a mixture containing a water-miscible and a water-immiscible organic solvent and in the presence of a saturated aqueous solution of an alkali or alkaline earth containing salt, to partition ceftiofur (I) in the organic phase, and f) isolating ceftiofur (I) of high purity and substantially free of impurities by evaporation of the organic solvent or precipitation by addition of a co-solvent.

    Abstract translation: 公开了一种制备高纯度且基本上不含杂质的式(I)头孢噻呋的方法。 该方法包括使式(II)的[2-(2-氨基噻唑-4-基)] - 2-顺式 - 甲氧基亚氨基乙酸-2-苯并噻唑基硫代酯与7-氨基-3-(2-呋喃基羰硫基甲基)-3 (III)的头孢-4-羧酸在水不溶性惰性有机溶剂和水的混合物存在下,在有机碱的存在下,分离基本上不含杂质的式(1)的头孢噻肟, d)向反应混合物中加入水,并在水相中选择性地分配有机相中的杂质和与碱的盐形式的头孢噻呋(I),e)以含有头孢噻呋(I)的形式酸化含有头孢噻呋 在含有水混溶性和与水不混溶的有机溶剂的混合物存在下,在含有碱或碱土金属盐的饱和水溶液的存在下,将碱与碱反应,从而将头孢噻吩(I) 有机相,和f)分离高纯度和实质的头孢噻呋(I) 通过蒸发有机溶剂或通过加入共溶剂沉淀而不含杂质。

    N-THIOLATED 2-OXAZOLIDINONE -DERIVED ANTIBIOTICS
    174.
    发明申请
    N-THIOLATED 2-OXAZOLIDINONE -DERIVED ANTIBIOTICS 有权
    N-巯基-2-氧杂环己烷 - 抗坏血酸

    公开(公告)号:US20080119533A1

    公开(公告)日:2008-05-22

    申请号:US11948073

    申请日:2007-11-30

    CPC classification number: C07D263/26 C07D263/52

    Abstract: This invention describes the discovery and synthesis of N-thiolated 2-oxazolidinones as a new class of anti bacterial agents. These compounds can be synthesized from 2-oxazolidinones by Ndeprotection and N-sulfenylation. These new substances were found to exhibit potent anti-bacterial activity, including bacteriostatic properties against Staphylococcus spp., including methicillin resistant Staphylococcus aureus (MRSA), and Bacillus spp., including Bacillus anthracis.

    Abstract translation: 本发明描述了N-硫醇化的2-恶唑烷酮作为新类抗细菌剂的发现和合成。 这些化合物可以通过Nd保护和N-亚磺酰化由2-恶唑烷酮合成。 发现这些新物质显示出有效的抗细菌活性,包括对葡萄球菌属的抑菌性,包括耐甲氧西林金黄色葡萄球菌(MRSA)和芽孢杆菌属(Bacillus spp。),包括炭疽芽孢杆菌。

    METHOD AND SYSTEM OF EXECUTING A SOFTWARE APPLICATION IN HIGHLY CONSTRAINED MEMORY SITUATION
    175.
    发明申请
    METHOD AND SYSTEM OF EXECUTING A SOFTWARE APPLICATION IN HIGHLY CONSTRAINED MEMORY SITUATION 有权
    在高度约束的记忆状况下执行软件应用的方法和系统

    公开(公告)号:US20080077787A1

    公开(公告)日:2008-03-27

    申请号:US11846527

    申请日:2007-08-29

    CPC classification number: G06F9/44505

    Abstract: A method and system for executing a software application having a binary size that is larger than an available memory space in an embedded system from which the software application will execute. The software application is split into one or more initialization sequences and a main code sequence. The method includes loading (302) each initialization sequence of the one or more initialization sequences in the memory space prior to its execution, and executing (304) each initialization sequence of the one or more initialization sequences out of the memory space. Further, the method includes loading (306) the main code sequence in the memory space after the execution of the one or more initialization codes and then executing (308) the main code sequence out of the memory space.

    Abstract translation: 一种用于执行软件应用程序的方法和系统,所述软件应用程序具有大于所述软件应用将从其执行的嵌入式系统中的可用存储器空间的二进制大小。 软件应用程序分为一个或多个初始化序列和主要代码序列。 该方法包括在其执行之前将(存储器)空间中的一个或多个初始化序列的每个初始化序列加载(302),并且从存储器空间中执行(304)一个或多个初始化序列的每个初始化序列。 此外,该方法包括在执行一个或多个初始化代码之后将主代码序列加载(306)到存储器空间中,然后从存储空间执行(308)主代码序列。

    Semiconductor device including a vertical field effect transistor, having trenches, and a diode
    176.
    发明授权
    Semiconductor device including a vertical field effect transistor, having trenches, and a diode 有权
    包括具有沟槽的垂直场效应晶体管和二极管的半导体器件

    公开(公告)号:US07307313B2

    公开(公告)日:2007-12-11

    申请号:US11206212

    申请日:2005-08-18

    CPC classification number: H01L29/1066 H01L29/7722 H01L29/8083

    Abstract: A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.

    Abstract translation: 半导体器件包括(a)垂直场效应晶体管,垂直场效应晶体管包括形成在第一导电类型的半导体的第一表面上的漏电极,由半导体的第二表面形成的一对第一沟槽, 沿着第一沟槽分别形成的第二导电类型的控制区域,沿着第一沟槽之间的半导体的第二表面形成的第一导电类型的源极区域,与源极区域连接的源极电极和与源极区域相邻的栅电极 控制区域,(b)与场效应晶体管独立地由半导体的第二表面形成的一对第二沟槽,(c)沿着第二沟槽形成的第二导电类型的控制区,以及(d)二极管, 在第二沟槽之间的第二表面上形成的结。

    Method And System For Alert Throttling In Media Quality Monitoring
    178.
    发明申请
    Method And System For Alert Throttling In Media Quality Monitoring 有权
    媒体质量监控中的警示调节方法与系统

    公开(公告)号:US20070248022A1

    公开(公告)日:2007-10-25

    申请号:US11379312

    申请日:2006-04-19

    Abstract: A method for alert throttling in media quality monitoring, includes monitoring a plurality of active communication sessions. Each active communication session is between at least two endpoints. The method also includes detecting at least one quality-impacted communication session out of the plurality of active communication sessions. The method also includes generating a first alert for each detected quality-impacted communication session out of the plurality of active communication sessions until a first throttling number of quality-impacted communication sessions is detected out of the plurality of active communication sessions. Upon detecting the first throttling number of quality-impacted communication sessions, the method includes generating a second alert for each group of additional second number of quality-impacted communication sessions detected out of the plurality of active communication sessions.

    Abstract translation: 一种用于在媒体质量监测中进行警报节流的方法,包括监视多个主动通信会话。 每个活动通信会话在至少两个端点之间。 该方法还包括从多个主动通信会话中检测至少一个受质量影响的通信会话。 该方法还包括为多个活动通信会话中的每个检测到的受质量影响的通信会话生成第一警报,直到从多个主动通信会话中检测到受质量影响的通信会话的第一节流数量。 在检测到受质量影响的通信会话的第一节流数量时,该方法包括为从多个主动通信会话中检测到的对质量影响的通信会话的每组额外的第二数量生成第二警报。

    Power switches having positive-channel high dielectric constant insulated gate field effect transistors
    179.
    发明申请
    Power switches having positive-channel high dielectric constant insulated gate field effect transistors 有权
    具有正通道高介电常数绝缘栅场效应晶体管的电源开关

    公开(公告)号:US20070236850A1

    公开(公告)日:2007-10-11

    申请号:US11394810

    申请日:2006-03-31

    CPC classification number: H01L27/088

    Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    Abstract translation: 公开了用于微电子器件的功率开关单元。 一方面,微电子器件可以包括功能电路,以及电源开关单元,用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管,其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面,可以将过驱动电压施加到这种晶体管的栅极,以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

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