Diffusion system
    181.
    发明授权
    Diffusion system 失效
    扩散系统

    公开(公告)号:US07452423B2

    公开(公告)日:2008-11-18

    申请号:US10912059

    申请日:2004-08-06

    CPC classification number: C30B31/10 C23C8/06 C30B31/06 C30B31/165 C30B35/00

    Abstract: Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.

    Abstract translation: 提供了一种用于在晶片中形成掺杂层的扩散系统。 扩散系统包括用于产生掺杂气体的起泡器; 预混合器,其将掺杂气体与反应性气体预混合并预热气体混合物; 主室,其中气体混合物与晶片反应; 缓冲箱,其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

    Multi-wavelength surface emitting laser and method for manufacturing the same
    183.
    发明授权
    Multi-wavelength surface emitting laser and method for manufacturing the same 失效
    多波长表面发射激光器及其制造方法

    公开(公告)号:US07387906B2

    公开(公告)日:2008-06-17

    申请号:US10890289

    申请日:2004-07-14

    Abstract: A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.

    Abstract translation: 用于发射具有不同波长的光的多波长表面发射激光器包括在一个基板上一体形成的下反射器,有源层和上反射器。 通过形成第一表面发射激光器,通过蚀刻部分地去除第一上反射器,第一有源层和第一下反射层来制造多波长表面发射激光器。 在第一表面发射激光器的外表面上形成保护膜。 通过蚀刻除去形成在保护膜上的第二下反射器,第二有源层和第二上反射层,形成第二表面发射激光器。 去除保护膜,分别在第一和第二上反射层的上表面上形成第一和第二上电极,并且在基板的底表面上形成下电极。

    Composition and organic insulating film prepared using the same
    184.
    发明申请
    Composition and organic insulating film prepared using the same 审中-公开
    组合物和使用其制备的有机绝缘膜

    公开(公告)号:US20080111128A1

    公开(公告)日:2008-05-15

    申请号:US11806744

    申请日:2007-06-04

    CPC classification number: H01L51/052

    Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

    Abstract translation: 公开了组合物,包含该有机绝缘膜的有机绝缘膜,包括有机绝缘膜的有机薄膜晶体管,包括有机薄膜晶体管的电子器件及其制造方法。 在该组合物中,包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料,从而实现可以进一步稳定未反应的交联材料的结构。 因此,滞后现象可能会降低,并且可能增加透明度,从而可以确保暴露在空气中时的稳定性。 因此,有机薄膜晶体管的寿命可以延长。

    Heterocyclic antiviral compounds
    187.
    发明授权
    Heterocyclic antiviral compounds 失效
    杂环抗病毒化合物

    公开(公告)号:US07164019B2

    公开(公告)日:2007-01-16

    申请号:US11147851

    申请日:2005-06-08

    CPC classification number: C07D487/04

    Abstract: Chemokine receptor antagonists, in particular, 3,7-diazabicyclo[3.3.0]octane compounds according to formula (I) are antagonists of chemokine CCR5 receptors which are useful for treating or preventing an human immunodeficiency virus (HIV) infection, or treating AIDS or ARC. The invention further provides methods for treating diseases that are allieviated with CCR5 antagonists. The invention includes pharmaceutical compositions and methods of using the compounds for the treatment of these diseases. The invention further includes processes for the preparation of compounds according to formula I.

    Abstract translation: 趋化因子受体拮抗剂,特别是根据式(I)的3,7-二氮杂双环[3.3.0]辛烷化合物是可用于治疗或预防人类免疫缺陷病毒(HIV)感染或治疗AIDS的趋化因子CCR5受体的拮抗剂 或ARC。 本发明还提供了治疗与CCR5拮抗剂相关的疾病的方法。 本发明包括药物组合物和使用该化合物治疗这些疾病的方法。 本发明还包括制备式I化合物的方法。

    Silicon optoelectronic device and light emitting apparatus using the same
    188.
    发明授权
    Silicon optoelectronic device and light emitting apparatus using the same 有权
    硅光电子器件和使用其的发光装置

    公开(公告)号:US06930330B2

    公开(公告)日:2005-08-16

    申请号:US10122421

    申请日:2002-04-16

    CPC classification number: H01L33/34 B82Y10/00 H01L31/0232 H01L31/035281

    Abstract: A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.

    Abstract translation: 提供硅光电子器件和使用硅光电子器件的发光设备。 硅光电子器件包括:基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型,以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应 基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。 硅光电子器件还可以包括形成在衬底的一个表面上的控制层,以在形成掺杂区域中用作掩模,并且将掺杂区域的深度限制为超浅。 硅光电子器件具有优异的效率,可用作发光器件或光接收器件。 由于光电器件使用硅作为基材,所以可以以低成本制造。

    Light emitting and/or detecting device and method of manufacturing the same
    190.
    发明申请
    Light emitting and/or detecting device and method of manufacturing the same 有权
    发光和/或检测装置及其制造方法

    公开(公告)号:US20050082549A1

    公开(公告)日:2005-04-21

    申请号:US10965203

    申请日:2004-10-15

    CPC classification number: H01L31/107 H01L31/105 H01L33/34

    Abstract: A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.

    Abstract translation: 提供一种发光和检测装置及其制造方法。 该方法包括在掺杂有n型掺杂剂或p型掺杂剂的衬底上形成绝缘层,以及去除绝缘层的一部分以暴露衬底的预定区域; 通过在所述衬底的所述暴露区域上施加掺杂剂并对所述衬底进行热处理以在所述衬底和所述掺杂层之间的p-n结中产生光转换效应,从而在所述衬底上形成掺杂有相反掺杂剂的掺杂层; 以及在所述衬底上形成第一和第二电极以电连接所述掺杂层。 因此,可以将衬底中与衬底相反的掺杂剂的掺杂层的扩散深度控制。

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