Abstract:
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
Abstract:
A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
Abstract:
Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.
Abstract:
Woven reinforcing fabrics for such conveyor belts characterized by an improved resistance to tearing in the longitudinal or travel direction. The woven reinforcing fabric includes a plurality of weft yarns and a plurality of warp yarns aligned substantially orthogonal to the plurality of weft yarns. The warp yarns are woven through the weft yarns to define a plurality of passages arranged in substantially parallel first and second planes. At least one of the weft yarns is positioned in each of the passages and two of the weft yarns are positioned in at least one of the passages in each of the first and second planes.
Abstract:
Provided is a digital image processing apparatus including: an array of a plurality of input buttons; and a display panel which displays icons respectively corresponding to the input buttons at positions respectively corresponding to positions of the input buttons, and a method of controlling the apparatus.
Abstract:
Chemokine receptor antagonists, in particular, 3,7-diazabicyclo[3.3.0]octane compounds according to formula (I) are antagonists of chemokine CCR5 receptors which are useful for treating or preventing an human immunodeficiency virus (HIV) infection, or treating AIDS or ARC. The invention further provides methods for treating diseases that are allieviated with CCR5 antagonists. The invention includes pharmaceutical compositions and methods of using the compounds for the treatment of these diseases. The invention further includes processes for the preparation of compounds according to formula I.
Abstract:
A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
Abstract:
The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.
Abstract:
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.