公开(公告)号：US07241694B2

公开(公告)日：2007-07-10

申请号：US11105587

申请日：2005-04-14

Applicant: Yuuichi Takeuchi ,  Rajesh Kumar Malhan ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

Inventor： Yuuichi Takeuchi ,  Rajesh Kumar Malhan ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC: H01L21/18 ,  H01L21/302 ,  H01L21/308

CPC classification number: H01L29/045 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/8083

Abstract: A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to or larger than 80 degrees is formed; and removing a damage portion in such a manner that the damage portion disposed on an inner surface of the trench formed in the semiconductor substrate in the step of forming the trench is etched and removed in hydrogen atmosphere under decompression pressure at a temperature equal to or higher than 1600° C.

Abstract translation: 一种制造碳化硅半导体器件的方法包括以下步骤：在半导体衬底的上表面上形成沟槽掩模; 形成沟槽，使得形成具有等于或大于2并且具有等于或大于80度的沟槽倾斜角的纵横比的沟槽; 并且以这样的方式去除损伤部分，即在形成沟槽的步骤中形成在半导体衬底的沟槽的内表面上的损伤部分在氢气气氛中在等于或等于更高的温度的减压下被蚀刻和去除 比1600℃

公开(公告)号：US20070151391A1

公开(公告)日：2007-07-05

申请号：US11553303

申请日：2006-10-26

Applicant: David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

Inventor： David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

IPC: B25J17/02

CPC classification number: A61B34/30 ,  A61B34/37 ,  A61B34/70 ,  A61B34/71 ,  A61B34/76 ,  A61B2034/2061 ,  A61B2034/305 ,  A61B2090/065 ,  Y10T74/20335

Abstract: A modular force sensor apparatus, method, and system are provided to improve force and torque sensing and feedback to the surgeon performing a telerobotic surgery. In one embodiment, a modular force sensor includes a tube portion including a plurality of strain gauges, a proximal tube portion for operably coupling to a shaft of a surgical instrument that may be operably coupled to a manipulator arm of a robotic surgical system, and a distal tube portion for proximally coupling to a wrist joint coupled to an end portion.

Abstract translation: 提供了一种模块式力传感器装置，方法和系统，以改善对外科医生执行远程外科手术的力和转矩检测和反馈。 在一个实施例中，模块化力传感器包括包括多个应变计的管部分，用于可操作地联接到外科器械的轴的近侧管部分，其可操作地联接到机器人手术系统的操纵臂，以及 用于向近侧联接到联接到端部的腕关节的远端管部分。

公开(公告)号：US07164154B2

公开(公告)日：2007-01-16

申请号：US10995566

申请日：2004-11-24

Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/15

CPC classification number: H01L29/8083 ,  H01L29/1608

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US07163817B2

公开(公告)日：2007-01-16

申请号：US09940235

申请日：2001-08-27

Applicant: Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

Inventor： Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

IPC: C12N9/48 ,  C12P21/00 ,  C12P21/06

CPC classification number: C07K14/78 ,  A61K38/00 ,  C07K14/3153 ,  C07K19/00 ,  C07K2319/70

Abstract: The invention disclosed herein provides clot specific streptokinase proteins possessing altered plasminogen characteristics, including enhanced fibrin selectivity. The kinetics of plasminogen activation by these proteins are distinct from those of natural streptokinase, in that there is a temporary delay or lag in the initial rate of catalytic conversion of plasminogen to plasmin. Also disclosed are processes for preparing the proteins.

Abstract translation: 本文公开的本发明提供具有改变的纤溶酶原特征的凝血特异性链激酶蛋白，包括增强的纤维蛋白选择性。 这些蛋白质的纤溶酶原激活的动力学与天然链激酶的动力学不同，因为纤溶酶原对纤溶酶的催化转化的初始速率暂时延迟或滞后。 还公开了制备蛋白质的方法。

公开(公告)号：US20060279267A1

公开(公告)日：2006-12-14

申请号：US11152280

申请日：2005-06-14

Applicant: Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

Inventor： Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

IPC: G05F1/00

CPC classification number: H02M7/003

Abstract: In general, in one aspect, the disclosure describes a semiconductor device that includes a functional circuit and a dc-to-dc power converter. The power converter converts, regulates, and filters a DC input voltage to produce a DC output voltage and provides the DC output voltage to the functional circuit. The dc-to-dc power converter has an operating frequency above 10 MHz.

公开(公告)号：US20050139859A1

公开(公告)日：2005-06-30

申请号：US10984957

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/80 ,  H01L21/04 ,  H01L21/337 ,  H01L29/24 ,  H01L29/808 ,  H01L29/06

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

Abstract translation: 碳化硅半导体器件包括衬底和结场效应晶体管。 晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

公开(公告)号：US20050070586A1

公开(公告)日：2005-03-31

申请号：US10913121

申请日：2004-08-05

Applicant: Ashok Kumar ,  Rajesh Kumar Keshava Prasad Singh ,  Nalinakshya Panda ,  Abhay Upare ,  Manmohan Nimbalkar ,  Satish Soudagar ,  Ashvini Kumar Nand Kishore Saxena

Inventor： Ashok Kumar ,  Rajesh Kumar Keshava Prasad Singh ,  Nalinakshya Panda ,  Abhay Upare ,  Manmohan Nimbalkar ,  Satish Soudagar ,  Ashvini Kumar Nand Kishore Saxena

IPC: A61K31/4184 ,  C07D403/10 ,  C07D43/02

CPC classification number: A61K31/4184 ,  C07D403/10

Abstract: Improved processes using primary, secondary and tertiary alcohols and with safer mode of introduction of the reagent and reaction conditions are described. Further, the process of manufacture of Losartan potassium by use of alkali metal salt such as Potassium carbonate is disclosed. A process for preparation of the polymorphic Form I of Losartan potassium is also disclosed herein.

Abstract translation: 描述了使用伯醇，仲醇和叔醇以及更安全的引入试剂和反应条件的改进方法。 此外，公开了通过使用碱金属盐如碳酸钾制造氯沙坦钾的方法。 本文还公开了制备氯沙坦钾的多晶型I的方法。

公开(公告)号：US06855981B2

公开(公告)日：2005-02-15

申请号：US10230152

申请日：2002-08-29

Applicant: Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

Inventor： Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/808 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872 ,  H01L29/76

CPC classification number: H01L29/66992 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872

Abstract: A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.

Abstract translation: 碳化硅功率器件包括结场效应晶体管和作为齐纳二极管或PN结二极管的保护二极管。 保护二极管的PN结的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括一个保护二极管，它是肖特基二极管。 通过调整肖特基势垒高度或肖特基二极管中包含的半导体中形成的耗尽层，肖特基二极管的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括三个保护二极管，它们是齐纳二极管。 两个保护二极管用于钳位由于浪涌能量施加到晶体管的栅极和漏极的电压，并用于释放浪涌能量。 最后一个二极管是热敏二极管，测量JFET的温度。

公开(公告)号：US06790425B1

公开(公告)日：2004-09-14

申请号：US09890030

申请日：2001-07-24

Applicant: Richard E. Smalley ,  Daniel T. Colbert ,  Ken A. Smith ,  Deron A. Walters ,  Michael J. Casavant ,  Chad B. Huffman ,  Boris I. Yakobson ,  Robert H. Hague ,  Rajesh Kumar Saini ,  Wan-Ting Chiang

Inventor： Richard E. Smalley ,  Daniel T. Colbert ,  Ken A. Smith ,  Deron A. Walters ,  Michael J. Casavant ,  Chad B. Huffman ,  Boris I. Yakobson ,  Robert H. Hague ,  Rajesh Kumar Saini ,  Wan-Ting Chiang

IPC: D01F912

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/08 ,  H01J2201/30469 ,  Y10S977/75 ,  Y10S977/845 ,  Y10S977/847 ,  Y10T156/10

Abstract: The present invention is directed to the creation of macroscopic materials and objects comprising aligned nanotube segments. The invention entails aligning single-wall carbon nanotube (SWNT) segments that are suspended in a fluid medium and then removing the aligned segments from suspension in a way that macroscopic, ordered assemblies of SWNT are formed. The invention is further directed to controlling the natural proclivity of nanotube segments to self assemble into ordered structures by modifying the environment of the nanotubes and the history of that environment prior to and during the process. The materials and objects are “macroscopic” in that they are large enough to be seen without the aid of a microscope or of the dimensions of such objects. These macroscopic, ordered SWNT materials and objects have the remarkable physical, electrical, and chemical properties that SWNT exhibit on the microscopic scale because they are comprised nanotubes, each of which is aligned in the same direction and in contact with its nearest neighbors. An ordered assembly of closest SWNT also serves as a template for growth of more and larger ordered assemblies. An ordered assembly further serves as a foundation for post processing treatments that modify the assembly internally to specifically enhance selected material properties such as shear strength, tensile strength, compressive strength, toughness, electrical conductivity, and thermal conductivity.

Abstract translation: 本发明涉及包括对准的纳米管段的宏观材料和物体的产生。 本发明需要将悬浮在流体介质中的单壁碳纳米管（SWNT）段对准，然后以形成SWNT的宏观有序组件的方式从悬浮液中除去对准的段。 本发明进一步涉及通过在过程之前和过程中修改纳米管的环境和该环境的历史来控制纳米管段的自然倾向自我组装成有序结构。 材料和物体是“宏观的”，因为它们足够大以便在没有显微镜或这些物体的尺寸的情况下被看到。 这些宏观有序的SWNT材料和物体具有显着的物理，电学和化学性质，SWNT在微观尺度上显示，因为它们包含纳米管，每个纳米管沿相同方向排列并与其最近的邻近物接触。 最近的SWNT的有序组件也可以作为增加更多和更大订单组件的模板。 订购的组件还用作后处理处理的基础，其在内部改变组件以特异性地增强选定的材料性能，例如剪切强度，抗拉强度，抗压强度，韧性，导电性和导热性。

公开(公告)号：US06541511B1

公开(公告)日：2003-04-01

申请号：US10166468

申请日：2002-06-10

Applicant: Rajesh Kumar Thaper ,  Saridi Madhava Dileep Kumar ,  Yatendra Kumar

Inventor： Rajesh Kumar Thaper ,  Saridi Madhava Dileep Kumar ,  Yatendra Kumar

IPC: A61K3135

CPC classification number: C07C69/30 ,  C07C2602/28 ,  C07D309/30

Abstract: The present invention relates to a novel methyl analog of simvastatin, which has the ability to inhibit the synthesis of cholesterol. The compound of the present invention holds promise for the treatment and prophylaxis of hypercholesterolemia and of various cardiac disorders. The invention also relates to a process for making the novel compound.

Abstract translation: 本发明涉及辛伐他汀的新型甲基类似物，其具有抑制胆固醇合成的能力。 本发明的化合物具有治疗和预防高胆固醇血症和各种心脏病的希望。 本发明还涉及制备该新化合物的方法。