公开(公告)号：US08320152B2

公开(公告)日：2012-11-27

申请号：US12385859

申请日：2009-04-22

Applicant: Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

Inventor： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

IPC: G11C7/00

CPC classification number: G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

Abstract: An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

Abstract translation: 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08270197B2

公开(公告)日：2012-09-18

申请号：US12289299

申请日：2008-10-24

Applicant: Sung-chul Lee

Inventor： Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

Abstract translation: 提供了一种在磁性纳米线中使用磁畴壁移动来操作信息存储装置的方法。 磁性纳米线包括形成在磁畴之间的区域中的多个磁畴和钉扎位置。 该方法包括通过向磁性纳米线施加具有第一脉冲电流密度的第一脉冲电流并将磁畴壁移动到第二钉扎位置，通过施加具有第二脉冲的第二脉冲电流来从第一钉扎位置去除磁畴壁 磁性纳米线的电流密度。 第一脉冲电流密度大于第二脉冲电流密度。

公开(公告)号：US08264898B2

公开(公告)日：2012-09-11

申请号：US13156763

申请日：2011-06-09

Applicant: Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

Inventor： Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

IPC: G11C7/00

CPC classification number: G11C16/3418 ,  G11C16/0416 ,  G11C16/24 ,  G11C16/3427

Abstract: A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.

Abstract translation: 提供了一种能够在与诸如程序，读取和/或擦除之类的存储器相关联的AC操作期间最小化干扰的系统和方法。 在AC操作期间，系统将存储器阵列中的所有或所需的位线子集预充电到指定的电压，以便于减少相邻单元之间的AC干扰。 可以将预充电电压施加到存储器阵列中的块中的所有位线，或者对与所选择的存储器单元相关联的位线以及与块中所选择的存储单元相邻的相邻存储单元。 该系统确保在选择存储器单元时，源极和漏极电压电平可以在相同或基本相同的时间被设置为期望的电平。 这可以有助于在AC操作期间最小化所选择的存储器单元中的AC干扰。

公开(公告)号：US08251093B2

公开(公告)日：2012-08-28

申请号：US12639932

申请日：2009-12-16

Applicant: Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  Jong-Rock Choi ,  In-Seob Song

Inventor： Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  Jong-Rock Choi ,  In-Seob Song

IPC: F16K11/20 ,  F16K11/074 ,  F23N1/02

CPC classification number: F23D14/64 ,  F23D14/82 ,  F23K5/007 ,  F23K2900/05001 ,  Y10T137/2499 ,  Y10T137/86501 ,  Y10T137/87249

Abstract: A fuel supply apparatus for a combustor configured to prevent or substantially prevent a flashback from being generated from the combustor. A fuel supply apparatus includes a fuel distribution part having a first opening part and a second opening part, the fuel distribution part configured to alternately discharge a fuel from the first opening part and the second opening part; and a housing having a first channel and a second channel, wherein an intermediate part of the first channel is coupled to and in fluid communication with the first opening part, and an intermediate part of the second channel is coupled to and in fluid communication with the second opening part.

Abstract translation: 一种用于燃烧器的燃料供应装置，其构造成防止或基本上防止从燃烧器产生回火。 燃料供给装置包括具有第一开口部和第二开口部的燃料分配部，所述燃料分配部配置为从所述第一开口部和所述第二开口部交替地排出燃料; 以及具有第一通道和第二通道的壳体，其中所述第一通道的中间部分联接到所述第一通道并与所述第一开口部分流体连通，并且所述第二通道的中间部分与所述第二通道的中间部分连接， 第二开幕部分。

公开(公告)号：US08233305B2

公开(公告)日：2012-07-31

申请号：US12458249

申请日：2009-07-07

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T29/49069

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract translation: 磁性结构包括第一部分和多个第二部分。 第一部分沿第一方向延伸。 多个第二部分在第二方向从第一部分的端部延伸。 第一和第二方向彼此垂直。 在磁性结构中形成两个彼此相反方向磁化的磁畴和磁畴之间的磁畴壁。

公开(公告)号：US20120139069A1

公开(公告)日：2012-06-07

申请号：US13313361

申请日：2011-12-07

Applicant: Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

IPC: H01L29/82 ,  H01L21/04

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Abstract translation: 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

公开(公告)号：US08173309B2

公开(公告)日：2012-05-08

申请号：US12068858

申请日：2008-02-12

Applicant: Leonid Gorobinskiy ,  Ju-Yong Kim ,  Man-Seok Han ,  Yong-Kul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim ,  Sung-Chul Lee ,  Kie-Hyun Nam ,  Noboru Sato ,  Alexey Alexandrovichserov

Inventor： Leonid Gorobinskiy ,  Ju-Yong Kim ,  Man-Seok Han ,  Yong-Kul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim ,  Sung-Chul Lee ,  Kie-Hyun Nam ,  Noboru Sato ,  Alexey Alexandrovichserov

IPC: H01M8/06

CPC classification number: C01B3/384 ,  B01J23/42 ,  B01J23/83 ,  B01J27/053 ,  C01B2203/0233 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/1011 ,  C01B2203/1023 ,  C01B2203/1041 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1082 ,  C01B2203/1235 ,  C01B2203/1241 ,  H01M8/0618 ,  H01M8/241 ,  Y02P20/52

Abstract: A reformer for a fuel cell system includes a heating source for generating heat by a reaction of a fuel and an oxidant using an oxidizing catalyst, and a reforming reaction part for generating hydrogen by a reforming catalyst reaction. The oxidizing catalyst includes a solid acid, including a strong acid ion and an inorganic oxide, and a platinum-based metal. The reformer for a fuel cell system can start a fuel oxidation catalyst reaction at a low temperature with the heating source having a simplified structure.

Abstract translation: 用于燃料电池系统的重整器包括通过燃料和氧化剂与氧化剂的反应产生热的加热源，以及通过重整催化剂反应产生氢的重整反应部分。 氧化催化剂包括固体酸，包括强酸离子和无机氧化物，以及铂族金属。 用于燃料电池系统的重整器可以在低温下开始燃料氧化催化剂反应，其中加热源具有简化的结构。

公开(公告)号：US20120038430A1

公开(公告)日：2012-02-16

申请号：US13099684

申请日：2011-05-03

Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

IPC: H03B5/30

CPC classification number: H03B15/006

Abstract: Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

Abstract translation: 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

公开(公告)号：US08089797B2

公开(公告)日：2012-01-03

申请号：US12659515

申请日：2010-03-11

Applicant: Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

Inventor： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.

Abstract translation: 存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。

公开(公告)号：US08045371B2

公开(公告)日：2011-10-25

申请号：US12588333

申请日：2009-10-13

Applicant: Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

Inventor： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

IPC: G11C11/15

CPC classification number: G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

Abstract translation: 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。