公开(公告)号：US20150210542A1

公开(公告)日：2015-07-30

申请号：US14684700

申请日：2015-04-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe

IPC: B81C1/00

CPC classification number: B81C1/00325 ,  B81B3/0072 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/013 ,  B81C2201/0159 ,  B81C2201/0198

Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.

Abstract translation: 示出了MEMS器件，制造MEMS器件的方法和MEMS器件的系统。 在一个实施例中，MEMS器件包括第一聚合物层，设置在第一聚合物层上的MEMS衬底和由MEMS衬底支撑的MEMS结构。 MEMS器件还包括设置在MEMS衬底中的第一开口和设置在第一聚合物层中的第二开口。

公开(公告)号：US09061896B2

公开(公告)日：2015-06-23

申请号：US14010360

申请日：2013-08-26

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Christoph Glacer ,  Soenke Pirk

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00539 ,  B81B7/0009 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81C1/00476

Abstract: A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.

Abstract translation: 一种用于制造MEMS器件的方法包括在与牺牲层相邻的层内提供空腔。 空腔延伸到牺牲层并且包括突出到该层中的毛细槽。 通过将牺牲层暴露于通过空腔引入的蚀刻剂来去除牺牲层。

公开(公告)号：US20150102807A1

公开(公告)日：2015-04-16

申请号：US14514415

申请日：2014-10-15

Applicant: Infineon Technologies AG

Inventor： Markus Eckinger ,  Stefan Kolb ,  Alfons Dehe ,  Guenther Ruhl

IPC: G01R33/07 ,  G01R33/00 ,  H01L43/14 ,  H01L27/092

CPC classification number: G01R33/072 ,  G01R33/0052 ,  H01L27/092 ,  H01L43/065 ,  H01L43/14

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract translation: 具有以各种几何形式实现的石墨烯检测层的霍尔效应传感器，包括所谓的“全3-d”霍尔传感器的可能性，其具有用于集成BiCMOS工艺的选项和用于产生所述霍尔效应的方法 传感器。

公开(公告)号：US20150102372A1

公开(公告)日：2015-04-16

申请号：US14052962

申请日：2013-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Stefan Kolb ,  Horst Theuss ,  Dirk Meinhold

IPC: H01L33/44 ,  H01L33/48

CPC classification number: H01L33/44 ,  H01L33/58

Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.

Abstract translation: 用于发射频率调节的红外光的半导体器件包括侧向发射极结构和侧向滤波器结构。 横向发射极结构被配置为发射具有发射极频率分布的红外光。 此外，横向滤波器结构被配置为对由横向发射器结构发射的红外光进行滤波，使得频率调节的红外光具有调整的频率分布。 调整频率分布的频率范围比发射体频率分布的频率范围窄。 此外，横向气隙位于横向发射器结构和侧向过滤器结构之间。

公开(公告)号：US20150078587A1

公开(公告)日：2015-03-19

申请号：US14553718

申请日：2014-11-25

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Martin Wurzer

IPC: H04R3/00 ,  H04R1/08 ,  B81B3/00

CPC classification number: H04R19/04 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R1/222 ,  H04R7/26 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS structure and a method for operation a MEMS structure are disclosed. In accordance with an embodiment of the present invention, a MEMS structure comprises a substrate, a backplate, and a membrane comprising a first region and a second region, wherein the first region is configured to sense a signal and the second region is configured to adjust a threshold frequency from a first value to a second value, and wherein the backplate and the membrane are mechanically connected to the substrate.

Abstract translation: 公开了MEMS结构和操作MEMS结构的方法。 根据本发明的实施例，MEMS结构包括衬底，背板和包括第一区域和第二区域的膜，其中第一区域被配置为感测信号，并且第二区域被配置为调整 从第一值到第二值的阈值频率，并且其中所述背板和所述膜机械连接到所述衬底。

公开(公告)号：US20140210020A1

公开(公告)日：2014-07-31

申请号：US13750941

申请日：2013-01-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00269 ,  B81B3/001 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00166 ,  B81C1/00658 ,  H04R19/005

Abstract: MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions.

Abstract translation: 公开了具有刚性背板的MEMS装置和制造具有刚性背板的MEMS装置的方法。 在一个实施例中，装置包括基板和由基板支撑的背板。 背板包括细长突起。

公开(公告)号：US20140103460A1

公开(公告)日：2014-04-17

申请号：US13651372

申请日：2012-10-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract translation: 公开了一种制造MEMS器件的方法。 此外，公开了一种MEMS器件和包括MEMS器件的模块。 一个实施例包括用于制造MEMS器件的方法，包括在衬底的第一主表面上形成MEMS堆叠，在衬底的第二主表面上形成聚合物层，并在聚合物层和衬底中形成第一开口，使得 第一个开口与MEMS堆栈相邻。

公开(公告)号：US20140079277A1

公开(公告)日：2014-03-20

申请号：US13975954

申请日：2013-08-26

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Marc Fueldner

IPC: H04R7/00 ,  H04R31/00

CPC classification number: H04R19/04 ,  H04R7/00 ,  H04R19/005 ,  H04R31/00 ,  H04R31/003 ,  H04R31/006 ,  Y10T29/49005

Abstract: A sound transducer structure includes a membrane, a counter electrode, and a plurality of elevations. The membrane includes a first main surface, made of a membrane material, in a sound transducing region and an edge region of the membrane. The counter electrode is made of counter electrode material, and includes a second main surface arranged in parallel to the first main surface of the membrane on a side of a free volume opposite the first main surface of the membrane. The plurality of elevations extend in the sound transducing region from the second main surface of the counter electrode into the free volume.

Abstract translation: 声换能器结构包括膜，对电极和多个高度。 膜包括在膜传播区域和膜的边缘区域中的由膜材料制成的第一主表面。 对电极由反电极材料制成，并且包括与膜的第一主表面相对的自由体积的一侧平行于膜的第一主表面排列的第二主表面。 多个高度在声音传播区域中从对置电极的第二主表面延伸到自由体积。

公开(公告)号：US11835041B2

公开(公告)日：2023-12-05

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B53/10 ,  F04B43/04 ,  F16K99/00

CPC classification number: F04B53/1047 ,  F04B43/046 ,  F16K99/0015 ,  F16K2099/0094

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.

公开(公告)号：US20220155261A1

公开(公告)日：2022-05-19

申请号：US17591714

申请日：2022-02-03

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Alfons Dehe ,  Jochen Huber ,  Franz Jost ,  Horst Theuss ,  Juergen Woellenstein

IPC: G01N29/30 ,  G01N29/24

Abstract: An apparatus for in-situ calibration of a photoacoustic sensor includes a measurement device configured to measure an electric signal at an IR emitter of the photoacoustic sensor, wherein the IR emitter generates an electromagnetic spectrum based on the electric signal; and a calibration unit including processing circuitry, configured to compare the electric signal with a comparison value to generate a comparison result used as calibration information. When performing the in-situ calibration, the calibration unit is configured to adjust the electric signal based on the calibration information, or the calibration unit is configured to process an output signal of the photoacoustic sensor based on the calibration information to obtain an adjusted output signal of the photoacoustic sensor.