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公开(公告)号：US11092538B2
公开(公告)日：2021-08-17
申请号：US16944279
申请日：2020-07-31
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.
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公开(公告)号：US10246325B2
公开(公告)日：2019-04-02
申请号：US14832001
申请日：2015-08-21
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Andreas Meiser , Till Schloesser , Wolfgang Werner
Abstract: A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.
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公开(公告)号：US09818934B2
公开(公告)日：2017-11-14
申请号：US15349004
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
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公开(公告)号：US09658179B2
公开(公告)日：2017-05-23
申请号：US14749102
申请日：2015-06-24
Applicant: Infineon Technologies AG
Inventor： Vijaye Kumar Rajaraman , Yonsuang Arnanthigo , Alfons Dehe , Stefan Kolb
CPC classification number: B81B7/02 , B81B3/0018 , B81B2201/0214 , B81B2201/0257 , B81B2201/0278 , B81C1/00166 , B81C1/00182 , B81C1/00206 , G01N27/223 , H04R19/005 , H04R19/04 , H04R31/003 , H04R2201/003
Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.
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公开(公告)号：US20160377569A1
公开(公告)日：2016-12-29
申请号：US14749102
申请日：2015-06-24
Applicant: Infineon Technologies AG
Inventor： Vijaye Kumar Rajaraman , Yonsuang Arnanthigo , Alfons Dehe , Stefan Kolb
CPC classification number: B81B7/02 , B81B3/0018 , B81B2201/0214 , B81B2201/0257 , B81B2201/0278 , B81C1/00166 , B81C1/00182 , B81C1/00206 , G01N27/223 , H04R19/005 , H04R19/04 , H04R31/003 , H04R2201/003
Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.
Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括具有第一空腔的衬底，该衬底从衬底的背面穿过衬底。 所述MEMS换能器还包括覆盖所述基底顶面上的所述第一空腔的穿孔第一电极板，覆盖所述基底的顶侧上的所述第一空腔并且与穿孔的第一电极板间隔开间隔区域的第二电极板，以及 在穿孔的第一电极板和第二电极板之间的间隔区域中的气体敏感材料。 气体敏感材料具有取决于目标气体浓度的电性质。
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Patent Agency Ranking
公开(公告)号：US20150353344A1
公开(公告)日：2015-12-10
申请号：US14832426
申请日：2015-08-21
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
CPC classification number: B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.
Abstract translation: 实施例涉及用于制造MEMS器件的MEMS器件和方法。 在一个实施例中，制造包括在绝缘体上非绝缘体（非SOI）衬底上形成单晶牺牲层，图案化单晶牺牲层，使得单晶牺牲层保持在第一部分中并在第二部分中被去除 部分横向于第一部分; 沉积第一硅层，所述第一硅层沉积在剩余的单晶牺牲层上，并且进一步横向于所述第一部分; 通过所述第一硅层中的至少一个释放孔去除所述单晶牺牲层的至少一部分，以形成空腔并密封所述空腔。
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公开(公告)号：US20150101395A1
公开(公告)日：2015-04-16
申请号：US14052959
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
IPC: G01N29/24
CPC classification number: G01N29/2425 , G01N21/1702 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/021
Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
Abstract translation: 用于分析气体的光声气体传感器装置包括发射器模块和压敏模块。 发射器模块布置在载体衬底上并发射光脉冲。 压敏模块布置在载体基板上的参考气体体积内。 将参考气体体积与要被分析的气体填充的体积分离。 此外，压敏模块产生传感器信号，该传感器信号指示由与参考气体体积内的参考气体相互作用的发射器模块发射的光脉冲引起的声波信息。 此外，发射器模块被布置成使得发射器模块发射的光脉冲在穿过要被分析的气体填充的体积之后达到参考气体体积。
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公开(公告)号：US20140252422A1
公开(公告)日：2014-09-11
申请号：US14281251
申请日：2014-05-19
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
CPC classification number: B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。
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公开(公告)号：US12078615B2
公开(公告)日：2024-09-03
申请号：US18322755
申请日：2023-05-24
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Matthias Eberl , Simon Gassner , Franz Jost , Stefan Kolb
CPC classification number: G01N29/2425 , G01N33/0004
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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公开(公告)号：US11573204B2
公开(公告)日：2023-02-07
申请号：US17116029
申请日：2020-12-09
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Jochen Dangelmaier , Matthias Eberl , Simon Gassner , Franz Jost , Stefan Kolb , Horst Theuss
Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
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